公开(公告)号：KR1020110089886A

公开(公告)日：2011-08-09

申请号：KR1020117016768

申请日：2008-09-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  스즈키도모히로 ,  다나카스미 ,  요네다마사타케 ,  미야시타히로유키

IPC: H01L21/324

CPC classification number: H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

公开(公告)号：KR1020100041817A

公开(公告)日：2010-04-22

申请号：KR1020107002723

申请日：2008-09-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  스즈키도모히로 ,  다나카스미 ,  요네다마사타케 ,  미야시타히로유키

IPC: H01L21/324

CPC classification number: H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An annealing apparatus is provided with a processing chamber (1) wherein a wafer (W) is stored; heating sources (17a, 17b) which are arranged to face the surface of the wafer (W) and have a plurality of LEDs (33) for irradiating the wafer (W) with light; and light transmitting members (18a, 18b), which are arranged corresponding to the heating sources (17a, 17b) and transmit light emitted from the light emitting element (33). The heat sources (17a, 17b) are constituted by attaching a plurality of the light emitting elements (33) on a supporting body (32) to face the wafer (W), and each of the light emitting elements is separately covered with a lens layer (20) composed of a transparent resin.

Abstract translation: 退火装置设有处理室（1），其中晶片（W）被储存; 所述加热源（17a，17b）配置成与所述晶片（W）的表面相对配置并且具有用于用光照射所述晶片（W）的多个LED（33） 以及对应于加热源（17a，17b）布置并透射从发光元件（33）发射的光的透光构件（18a，18b）。 热源（17a，17b）通过将多个发光元件（33）附着在支撑体（32）上以面对晶片（W）而构成，并且每个发光元件分别被透镜覆盖 层（20）由透明树脂构成。

公开(公告)号：KR1020080016977A

公开(公告)日：2008-02-22

申请号：KR1020087002453

申请日：2002-02-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  미야시타히로유키

IPC: H01L21/324

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: The invention relates to a heat treating method comprising the steps of mounting work on a mounting block installed in a treating vessel capable of vacuum drawing, increasing the temperature of the work to a predetermined temperature. It is arranged that in at least a part of the temperature increasing step, the temperature of the work is increased while maintaining a temperature distribution such that the temperature of the work is high in the central portion and low in the peripheral edge.

Abstract translation: 本发明涉及一种热处理方法，包括以下步骤：将工件安装在能够真空拉制的处理容器中的安装块上，将工件的温度提高到预定温度。 设置在升温步骤的至少一部分中，工件的温度增加，同时保持温度分布，使得工件的温度在中心部分高​​，并且周边边缘低。

公开(公告)号：KR1020070090957A

公开(公告)日：2007-09-06

申请号：KR1020077014619

申请日：2006-04-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다다구니히로 ,  미야시타히로유키 ,  군지이사오

IPC: H01L21/02

CPC classification number: C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

Abstract: Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

Abstract translation: 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

公开(公告)号：KR1020030074831A

公开(公告)日：2003-09-19

申请号：KR1020037010721

申请日：2002-02-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가사이시게루 ,  미야시타히로유키

IPC: H01L21/324

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: 본 발명은 진공 흡인 가능한 처리 용기 내에 설치된 재치대에 피처리체를 재치하는 재치 공정과, 상기 피처리체를 소정의 온도까지 온도를 높이는 승온 공정을 구비한 열 처리 방법에 관한 것이다. 상기 승온 공정의 적어도 일부에서, 상기 피처리체는 상기 피처리체의 중앙부의 온도가 높고 주연부의 온도가 낮은 온도 분포가 유지된 상태로 승온되도록 이루어져 있다.