Abstract:
제조 공정을 단순화하고 박막화를 용이하게 할 수 있도록, 본 발명은 기판, 상기 기판 상에 형성된 활성층, 상기 활성층과 절연되는 게이트 전극, 상기 게이트 전극과 절연되고 상기 활성층과 전기적으로 연결되는 소스 전극 및 드레인 전극, 상기 소스 전극 및 드레인 전극의 상부에 형성되고 상기 소스 전극 및 드레인 전극의 측면을 노출하도록 형성되고 개구부를 구비하는 화소 정의막, 상기 개구부에 배치되고 유기 발광층을 구비하는 중간층 및 상기 중간층상에 형성되는 대향 전극을 포함하고, 상기 소스 전극 및 드레인 전극 중 어는 하나는 화소 전극의 기능을 하도록 길게 연장되고, 상기 개구부는 상기 화소 전극의 기능을 하는 전극 상부에 형성되고, 상기 개구부를 통하여 상기 중간층이 상기 소스 전극 및 드레인 전극 중 화소 전극의 기능을 하는 전극과 연결되는 유기 발광 표시 장치 및 그 제조 방법을 제공한다.
Abstract:
PURPOSE: An organic light emitting display device and a manufacturing method thereof are provided to reduce a thickness by removing a conductive layer and an insulation layer for forming a pixel electrode. CONSTITUTION: An active layer(103) is formed on a substrate(101). A gate electrode is insulated from the active layer. A source electrode(107) and a drain electrode(108) are electrically connected to the active layer. One of the source electrode and the drain electrode functions as the pixel electrode. A pixel defining layer(109) is formed on the source electrode and the drain electrode. An intermediate layer is arranged on the opening unit of the pixel defining layer and includes the organic light emitting layer. An opposite electrode is formed on the intermediate layer.
Abstract:
PURPOSE: A thin film transistor array substrate for a flat panel display device, an organic light emitting display device, and a manufacturing method thereof are provided to increase capacity of a capacitor without increasing the area of the capacitor by forming the capacitor comprised of two dielectric layers and three electrodes. CONSTITUTION: An active layer(21) of a thin film transistor is formed on a substrate(10) with a preset pattern. A first electrode(31) of a capacitor is formed on the same layer as the active layer with a preset interval. The first electrode is made of the same material as the active layer. A first insulation layer is formed in the upper sides of the active layer and the first electrode separately. A gate electrode is formed on the first insulation layer and corresponds to the channel region of the active layer. A second electrode(33) is made of the same material as the gate electrode and corresponds to the first electrode in the same layer as the gate electrode. A second insulation layer(15) is formed on the substrate, the first insulation layer, the gate electrode, and the second electrode.
Abstract:
PURPOSE: An apparatus for depositing a thin film is provided to improve deposition uniformity of the thin film by using a noncontact method for transferring heat from a heater to a susceptor. CONSTITUTION: An apparatus for depositing a thin film includes a susceptor(120) installed within a reaction chamber and a heater(130) for heating the susceptor. A noncontact heat transfer device is installed at one part of the susceptor in order to transfer the heat by using a noncontact method. The noncontact heat transfer device includes a floating groove(121) formed between the susceptor and an opposite side of the heater, a heat transfer medium moved within the floating groove, and a medium supply part(162) for supplying the heat transfer medium to the floating groove.
Abstract:
An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.
Abstract:
PURPOSE: A display device is provided to use a red color filter layer as an interlayer insulating film to electrically insulate a gate electrode and source/drain electrodes, thereby removing a separate process for forming a color filter layer. CONSTITUTION: A substrate(200) comprises a red sub pixel area, a green sub pixel area, and a blue sub pixel area. A buffer layer(210) is formed on the substrate. A gate insulating film(230) is formed on the entire substrate including a poly silicon pattern. A semiconductor layer includes source/drain areas(220a,220c) and a channel area(220b). The semiconductor layer is formed on a transistor area of each sub pixel area. A first capacitor electrode(220d) is formed on a capacitor area of each sub pixel area.
Abstract:
PURPOSE: A flat panel display and a manufacturing method thereof for improving the display quality and simplifying a manufacturing process are provided to reduce cost by reducing the number of masks. CONSTITUTION: A first lower electrode(31-1) of a capacitor is spaced in the same layer as the active layer. The first upper electrode of the capacitor is formed on the first bottom electrode. A pixel lower electrode(42-1) is formed into a gate lower electrode(22-1) and the same material as the capacitor second bottom electrode. The pixel upper electrode is formed into the gate upper part electrode and the same material as the capacitor second upper electrode.
Abstract:
PURPOSE: A thin film transistor, a method for manufacturing the same and an organic light emitting display device including the same are provided to reduce the failure rate by preventing arc which is generated while an amorphous silicon layer is crystallized due to the conductive heat of a metal layer. CONSTITUTION: A substrate includes a pixel part and a peripheral part. A buffer layer(110) is located on the substrate. A semiconductor layer(120) is located on the buffer layer and corresponds to the pixel part. A gate insulation layer(130) is located on the semiconductor layer. A gate electrode is insulated from the semiconductor layer and is located on the gate insulation layer. A source/drain electrode is insulated from the gate electrode and is electrically connected to the semiconductor layer through a contact hole. The region which corresponds to the contact hole is doped with dopant.
Abstract:
An organic light-emitting display device and a manufacturing method thereof are provided to decrease the using frequency of a mask in order to reduce manufacturing costs. A patterned semiconductor layer(210) is formed on a substrate(100). A gate dielectric(110) is formed on the semiconductor layer. A first conductive layer(231) and a second conductive layer(232) are formed on the gate dielectric. A photoresist layer is formed on some part of the second conductive layer. A gate electrode(230) is formed on a first region(A1) including the first conductive layer and the second conductive layer. A pixel electrode(310) and a material layer of the second conductive layer are formed on a second region(A2). An intermediate layer(320) including a light-emitting layer is formed on the pixel electrode.