-
公开(公告)号：KR1020080056331A
公开(公告)日：2008-06-23
申请号：KR1020060129095
申请日：2006-12-18
Applicant: 삼성전자주식회사
IPC: H01L21/762
CPC classification number: H01L21/76224 , H01L21/31053
Abstract: A method for fabricating a semiconductor device is provided to form an isolation layer pattern having uniform thickness in the center and peripheral parts of a cell region of a substrate by using a mask pattern in which a nitride layer pattern is doubly stacked. A mask pattern structure in which a first nitride layer pattern, an etch stop layer pattern and a second nitride layer pattern are stacked is formed on a substrate(100). The substrate is partially etched by using the mask pattern structure as an etch mask to form isolation trenches. A preliminary isolation layer pattern is formed to fill the trenches. The second nitride layer pattern is removed. A part of the preliminary isolation layer pattern and the etch stop layer pattern are removed to form an isolation layer pattern(118). The first nitride layer pattern is eliminated. The isolation layer pattern can be formed by polishing a part of the preliminary isolation layer pattern and the stop layer pattern to expose the first nitride layer pattern.
Abstract translation: 提供一种制造半导体器件的方法，通过使用其中氮化物层图案被双重堆叠的掩模图案，在衬底的单元区域的中心和外围部分中形成具有均匀厚度的隔离层图案。 在衬底（100）上形成其中层叠有第一氮化物层图案，蚀刻停止层图案和第二氮化物层图案的掩模图案结构。 通过使用掩模图案结构作为蚀刻掩模来部分蚀刻衬底以形成隔离沟槽。 形成初步隔离层图形以填充沟槽。 去除第二氮化物层图案。 去除初步隔离层图案和蚀刻停止层图案的一部分以形成隔离层图案（118）。 消除了第一氮化物层图案。 可以通过抛光初步隔离层图案和停止层图案的一部分来露出第一氮化物层图案来形成隔离层图案。
-
公开(公告)号：KR1020080015307A
公开(公告)日：2008-02-19
申请号：KR1020060076838
申请日：2006-08-14
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: A planarization method in a semiconductor fabricating process is provided to prevent a desired layer from being over-etched at an edge of a high region adjacent to a low region by forming a sacrificial layer on the layer. A desired layer(56) having a surface fluctuation is formed on a semiconductor substrate(50), and then a sacrificial layer(58) for planarizing the surface fluctuation is formed on the layer. The layer is formed to have a recessed region located at a position lower than a surrounding region, and a groove(52) formed on the recessed region. In the step of planarizing the layer, a step height between the recessed region and the surrounding region is eliminated. After planarizing the layer, the sacrificial layer remaining in the groove is etched and removed.
Abstract translation: 提供半导体制造工艺中的平面化方法，以通过在该层上形成牺牲层来防止在邻近低区域的高区域的边缘上过度蚀刻所需层。 在半导体衬底（50）上形成具有表面波动的期望层（56），然后在该层上形成用于平坦化表面波动的牺牲层（58）。 该层形成为具有位于比周围区域低的位置的凹陷区域，以及形成在凹陷区域上的凹槽（52）。 在平坦化层的步骤中，消除了凹陷区域和周围区域之间的台阶高度。 在平坦化层之后，蚀刻并除去残留在凹槽中的牺牲层。
-
公开(公告)号：KR100755411B1
公开(公告)日：2007-09-04
申请号：KR1020060094507
申请日：2006-09-28
Applicant: 삼성전자주식회사
IPC: H01L21/304 , H01L21/31
CPC classification number: H01L21/76819
Abstract: A method for fabricating a semiconductor device is provided to form uniformly a planarized insulating layer on a substrate by polishing a surface of a preliminary insulating pattern. A preliminary insulating layer is formed on a substrate(100), and then a photoresist pattern(160) is formed on the preliminary insulating layer. A center portion(148) of the preliminary insulating layer is partially removed by using the photoresist pattern as a mask to form a preliminary insulating layer pattern(145) having a peripheral portion(146) higher than the center portion. A surface of the preliminary insulating layer pattern is polished to form a planarized insulating layer.
Abstract translation: 提供一种制造半导体器件的方法，通过抛光初步绝缘图案的表面在衬底上均匀地形成平坦化的绝缘层。 在基板（100）上形成预备绝缘层，然后在预备绝缘层上形成光致抗蚀剂图案（160）。 通过使用光致抗蚀剂图案作为掩模来部分去除初级绝缘层的中心部分（148），以形成具有比中心部分高的周边部分（146）的初步绝缘层图案（145）。 抛光初步绝缘层图案的表面以形成平坦化的绝缘层。
-
公开(公告)号：KR1020070062341A
公开(公告)日：2007-06-15
申请号：KR1020050122162
申请日：2005-12-12
Applicant: 삼성전자주식회사
CPC classification number: H04J3/1694 , H04J14/0226 , H04J14/0247 , H04J14/0252 , H04J14/0282
Abstract: A GPON(Gigabit-capable Passive Optical Network) system and a band allocation method in the GPON system are provided to guarantee an uplink channel transmission according to T-CONT(Traffic-Container) priority in a congested situation in a short term, and prevent traffic congestion of a network in a long term. A variable 'i' indicating an ONU(Optical Network Unit) is set as 1 and initialization is performed(S401). An OLT(Optical Line Termination) receives a request for allocating a bandwidth from the ONUi, checks whether the allocation-requested bandwidth is greater than a minimum bandwidth of the corresponding ONUi(S402), and allocates a bandwidth as much as requested by ONUi(S403). It is checked whether the value 'i' is the same as the number of entire ONUs(S404). When the value 'i' is the same as the number of the entire ONUs, a variable 'k' indicating the ONU is set as 1(S406). An OLT checks whether there is an extra bandwidth and whether there is a T-CONT to which bandwidth has not been allocated(S407), and if so, a weight value of each T-CONT class, a weight value of each ONU in accordance with a rate of each T-CONT buffer queuing, and an allocation band of each T-CONT class of each ONU are calculated(S408). Each ONU is given a priority level according to its weight value(S409), and the band calculated by each ONU is allocated, starting from the ONU having the highest priority level(S410). It is checked whether the variable 'K' indicating numbers of ONUs is the same as the number of the entire ONUs(S411). When dynamic allocation for the ONUs is completed, the allocated result is transmitted to each ONU(S413).
Abstract translation: 提供GPON系统中的GPON（千兆位无源光网络）系统和频带分配方法，以保证在短时间内拥塞的情况下根据T-CONT（Traffic-Container）优先级的上行链路信道传输，并防止 长期以来网络交通拥堵。 指示ONU（光网络单元）的变量“i”被设置为1并执行初始化（S401）。 OLT（Optical Line Termination，光线路终端）接收从ONUi分配带宽的请求，检查分配请求带宽是否大于对应ONUi的最小带宽（S402），并分配ONUi所要求的带宽（ S403）。 检查值“i”是否与整个ONU的数量相同（S404）。 当值“i”与整个ONU的数量相同时，指示ONU的变量“k”被设置为1（S406）。 OLT检查是否存在额外的带宽以及是否存在尚未分配带宽的T-CONT（S407），如果是，则每个T-CONT类的权重值，每个ONU的权重值根据 每个T-CONT缓冲器排队的速率，并且计算每个ONU的每个T-CONT类别的分配频带（S408）。 每个ONU根据其权重值被给予优先级（S409），并且从具有最高优先级的ONU开始分配由每个ONU计算的频带（S410）。 检查指示ONU数量的变量“K”是否与整个ONU的数量相同（S411）。 当ONU的动态分配完成后，将分配的结果发送给每个ONU（S413）。
-
公开(公告)号：KR1020070060368A
公开(公告)日：2007-06-13
申请号：KR1020050119693
申请日：2005-12-08
Applicant: 삼성전자주식회사
CPC classification number: H04J3/1694 , H04J14/0226 , H04J14/0247 , H04J14/0252 , H04J14/0282
Abstract: A GPON(Gigabit-capable Passive Optical Network) system and a method for allocating bandwidths therein are provided to efficiently allocate bandwidths in consideration of fairness between ONUs(Optical Network Units) and T-CONT(Traffic-Container) priorities by allocating a minimal bandwidth to each ONU and proportionally assigning an additional bandwidth according to the T-CONT priority of each ONU. An OLT(Optical Line Terminal) sets 'i', a variable indicating the number of ONUs, to '1'(S401). The OLT, receiving a bandwidth allocation request from an ONU, checks whether the requested bandwidth is larger than Min_BWi, the minimum bandwidth of the ONU(S402). If so, the OLT allocates Min_BWi to the ONU(S403). If not, the OLT allocates the requested bandwidth only(S404). Then, the OLT judges whether the value of 'i' is identical to the total number of ONUs within the system(S405). If so, the OLT completes the minimum bandwidth allocation procedures. The OLT sets 'k', a variable indicating T-CONT classes, to '1' in order to start dynamic bandwidth allocation procedures(S407). The OLT requests each ONU to report whether a T-CONT to which a bandwidth hasn't been allocated exists. Confirming that a remaining bandwidth exists and that a T-CONT which a bandwidth hasn't been allocated exists, the OLT calculates a bandwidth to be allocated to 'K', T-CONT classes based on a weight granted to 'k'(S409). The OLT checks whether the value of 'k' reaches the number of the whole T-CONT classes(S410).
Abstract translation: 提供GPON（千兆位无源光网络）系统及其中分配带宽的方法，以通过分配最小带宽来考虑ONU（光网络单元）和T-CONT（业务容器）优先级之间的公平性来有效分配带宽 并根据每个ONU的T-CONT优先级按比例分配附加带宽。 OLT（Optical Line Terminal，光线路终端）将指示ONU数量的变量'i'设置为'1'（S401）。 接收来自ONU的带宽分配请求的OLT检查所请求的带宽是否大于ONU的最小带宽Min_BWi（S402）。 如果是，则OLT将Min_BWi分配给ONU（S403）。 如果不是，OLT仅分配所请求的带宽（S404）。 然后，OLT判断“i”的值是否与系统内的ONU总数相同（S405）。 如果是这样，则OLT完成最小带宽分配过程。 为了开始动态带宽分配过程，OLT将'k'（表示T-CONT类的变量）设置为'1'（S407）。 OLT请求每个ONU报告是否存在尚未分配带宽的T-CONT。 确认剩余带宽存在，并且没有分配带宽的T-CONT存在，OLT根据授予“k”的权重计算分配给“K”，T-CONT等级的带宽（S409 ）。 OLT检查'k'的值是否达到整个T-CONT等级的数量（S410）。
-
Patent Agency Ranking
公开(公告)号：KR100509499B1
公开(公告)日：2005-08-22
申请号：KR1020030026680
申请日：2003-04-28
Applicant: 삼성전자주식회사
IPC: G03G15/01
CPC classification number: G03G15/0131 , G03G15/0173
Abstract: 개시된 칼라화상형성장치는, 감광드럼의 하방에 설치되어 대전된 감광드럼에 광을 주사하여 정전잠상을 형성하는 노광유닛과, 감광드럼의 외주를 따라 서로 다른 높이에 배치되는 옐로우, 마젠타, 시안, 블랙의 4색 현상기를 포함하며 각 색상별 현상기에 설치된 현상롤러가 모두 감광드럼과 현상갭을 유지한 고정 상태에서 분말상의 토너로 정전잠상을 현상하는 현상유닛과, 현상된 화상을 용지에 전사하는 전사유닛 및, 감광드럼의 상방에 설치되어 용지에 전사된 화상을 정착시키는 정착유닛을 포함하며, 현상유닛의 4색 현상기는 노광유닛 측에서 정착유닛 측으로 올라가면서 마젠타, 시안, 옐로우, 블랙의 순서로 배치된 것을 특징으로 한다. 이와 같은 구성의 칼라화상형성장치로 옐로우, 시안, 마젠타, 블랙의 순서로 현상작업을 진행하면, 각 색상간 오염 등의 영향을 줄이면서 높은 화상 품질을 확보할 수 있다.
-
公开(公告)号：KR1020090006467A
公开(公告)日：2009-01-15
申请号：KR1020070069833
申请日：2007-07-11
Applicant: 삼성전자주식회사
Inventor： 김동근
CPC classification number: H04N1/00204 , H04N1/00408 , H04N2201/0015 , H04N2201/0039 , H04N2201/0041 , H04N2201/0046 , H04N2201/0075 , H04N2201/0081 , H04N2201/0094
Abstract: A scanning method and a scanning system by using a twain driver capable of remotely connecting local interface such as a parallel port or USB are provided to maximize the convenience and usability by performing scan in a user host computer. A user host computer(100) comprises a scan manager(108) and a scan to PC application(104). A scan manager searches with the scanner(200) supporting the network scanning. The user information and the scan option such as the user host computer information are registered in the searched scanner. The scan to PC application receives a scan option and register information of a scanner. A network module unit(150) comprises the scanner searcher(156) and a session control device(154). The scanner searcher is located between the scan manager and scanner.
Abstract translation: 通过使用能够远程连接诸如并行端口或USB的本地接口的双向驱动器来提供扫描方法和扫描系统，以通过在用户主机中执行扫描来最大化便利性和可用性。 用户主机（100）包括扫描管理器（108）和扫描到PC应用（104）。 扫描管理器与支持网络扫描的扫描器（200）进行搜索。 用户信息和诸如用户主机信息的扫描选项被登记在所搜索的扫描仪中。 扫描到PC应用程序接收扫描选项并注册扫描仪的信息。 网络模块单元（150）包括扫描器搜索器（156）和会话控制设备（154）。 扫描仪搜索器位于扫描管理器和扫描仪之间。
-
公开(公告)号：KR100833178B1
公开(公告)日：2008-05-28
申请号：KR1020050078908
申请日：2005-08-26
Applicant: 삼성전자주식회사
Inventor： 김동근
IPC: G06F12/02
CPC classification number: G06F12/0862
Abstract: 캐시 메모리에 저장되는 블록개수를 제어할 수 있는 캐시 메모리 시스템 및 동작 방법이 개시된다. 위한 본 발명의 실시예에 따른 캐시 메모리 시스템은 중앙처리장치, 제 1 메모리, 제 2 메모리와 블록개수 결정부를 구비한다. 제 2 메모리는 상기 중앙처리장치와 상기 제 1 메모리 사이에서 상기 제 1 메모리의 내부 저장 영역인 블록을 저장한다. 블록개수 결정부는 상기 제 1 메모리에서 상기 제 2 메모리로 저장되는 상기 블록의 개수를 지시한다. 본 발명에 따른 캐시 메모리 시스템 및 동작 방법은 공간적 집약성이 넓은 영역에 걸쳐 존재하는 데이터들과 인접한 다수의 블록을 캐시 메모리에 저장함으로써 캐시미스 횟수를 줄여 메모리 억세스에 소요되는 시간을 줄일 수 있다.
-
公开(公告)号：KR1020070041031A
公开(公告)日：2007-04-18
申请号：KR1020050096705
申请日：2005-10-13
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: 본 발명은 화학/기계적 연마장치의 리테이너 링에 관한 것으로, 플렛-존이 형성된 웨이퍼의 이탈을 방지하기 위한 화학/기계적 연마장치의 리테이너 링에 있어서, 상기 리테이너 링의 내주면에 상기 웨이퍼의 상기 플렛-존 형상에 대응되는 돌출부가 더 형성되며, 이에 따라 웨이퍼에 형성된 플렛-존과 리테이너 링의 내주면에서 발생되는 리바운딩 현상이 웨이퍼의 다른 부위에 대하여 균일하게 형성됨으로써, 웨이퍼의 표면에 일정한 연마압력이 형성되어 웨이퍼의 연마 균일도를 일정하게 유지할 수 있어 이에 따른 웨이퍼의 가공불량을 해소할 수 있으며, 웨이퍼에 일정한 연마압력이 형성됨에 따라 연마패드의 국부적인 마모를 방지하여 연마패드의 라이프 사이클을 향상시킬 수 있는 효과가 있다.
-
公开(公告)号：KR1020070033493A
公开(公告)日：2007-03-27
申请号：KR1020050087706
申请日：2005-09-21
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/28 , H01L21/3205
CPC classification number: H01L21/0274 , H01L21/28 , H01L21/3205
Abstract: A pattern forming method is provided to prevent an oxide layer from being generated at a side of a pre-tungsten pattern by removing a hard mask using a wet etching process instead of a dry etching process. An interlayer dielectric is formed on a substrate(100) with a conductive pattern. A hard mask is formed on the interlayer dielectric. An opening portion(110) for exposing the conductive pattern to the outside is formed on the resultant structure by etching selectively the interlayer dielectric using the hard mask as an etch mask. A tungsten film for filling the opening portion is formed on the resultant structure. A pre tungsten pattern for exposing the hard mask to the outside is formed on the resultant structure by etching the tungsten film. The hard mask is then removed from the resultant structure by using wet etching. A tungsten pattern(116b) is formed by performing a CMP(Chemical Mechanical Polishing) process on the pre tungsten pattern.
Abstract translation: 提供了图案形成方法，以防止通过使用湿蚀刻工艺代替干蚀刻工艺去除硬掩模来在钨前图案的一侧产生氧化物层。 在具有导电图案的基板（100）上形成层间电介质。 在层间电介质上形成硬掩模。 通过使用硬掩模作为蚀刻掩模选择性地蚀刻层间电介质，在所得结构上形成用于将导电图案暴露于外部的开口部分（110）。 在所得结构上形成用于填充开口部的钨膜。 通过蚀刻钨膜，在所得结构上形成用于将硬掩模暴露于外部的预钨图案。 然后通过使用湿蚀刻从所得结构中除去硬掩模。 通过对钨前图案进行CMP（化学机械抛光）工艺来形成钨图案（116b）。
-
-
-
-
-
-
-
-
-
Search Results
32
records
(took 0.026 seconds)
