公开(公告)号：KR1019960009289A

公开(公告)日：1996-03-22

申请号：KR1019940021455

申请日：1994-08-29

Applicant: 삼성전자주식회사

Inventor： 마동준

IPC: H01S3/10

公开(公告)号：KR101610260B1

公开(公告)日：2016-04-08

申请号：KR1020080127268

申请日：2008-12-15

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  김종민 ,  마동준 ,  이창수

IPC: H01L21/324

CPC classification number: H01L21/02689 ,  H01J37/317 ,  H01J2237/3156 ,  H01J2237/316 ,  H01L21/02532

Abstract: 기판상에증착된박막을어닐링하는전자빔어닐링장치및 어닐링방법이개시된다. 개시된전자빔어닐링장치는, 기판의소정영역에펄스형태로전자빔을주사하는전자빔주사장치를포함한다.

公开(公告)号：KR1020100130009A

公开(公告)日：2010-12-10

申请号：KR1020090048652

申请日：2009-06-02

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  마동준

IPC: H01L21/208

CPC classification number: C23C18/122 ,  C23C18/1254 ,  C23C18/14 ,  H01L21/288 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

Abstract: PURPOSE: A silicon film manufacturing method is provided to improve the utilization of a silicon film by controlling the thickness range of the silicon film according to a purpose. CONSTITUTION: A solution for the formation of silicon is manufactured. A UV is irradiated to the solution. The solution for the formation of silicon is spread onto a substrate. A solvent within the solution for the formation of silicon is removed. An electron beam is irradiated.

Abstract translation: 目的：提供一种硅膜制造方法，以通过根据目的控制硅膜的厚度范围来提高硅膜的利用率。 构成：制造用于形成硅的解决方案。 对溶液照射UV。 用于形成硅的溶液扩散到基底上。 除去用于形成硅的溶液中的溶剂。 照射电子束。

公开(公告)号：KR1020100121943A

公开(公告)日：2010-11-19

申请号：KR1020090040893

申请日：2009-05-11

Applicant: 삼성전자주식회사

Inventor： 김해성 ,  조은형 ,  손진승 ,  마동준

IPC: G02B5/20 ,  G02B6/13

Abstract: PURPOSE: A method of manufacturing a photonic crystal type color filter is provided to improve the regularity of a pattern by reducing the number of process. CONSTITUTION: A refraction material layer is formed on a substrate(130) and is pushed through a mold to form a two-dimensional photonic crystal color pattern structure. Crystallizing energy is applied to the refraction material layer. The mold adopts the two- dimensional photonic crystal color pattern structure and then the mold is separated.

Abstract translation: 目的：提供一种制造光子晶体型滤色器的方法，通过减少工艺数量来提高图案的规则性。 构成：在基板（130）上形成折射材料层，并且通过模具被推入以形成二维光子晶体彩色图案结构。 将结晶能量施加到折射材料层。 模具采用二维光子晶体彩色图案结构，然后模具分离。

公开(公告)号：KR1020090020920A

公开(公告)日：2009-02-27

申请号：KR1020070085559

申请日：2007-08-24

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  마동준 ,  최상준

IPC: H01L21/203

CPC classification number: C23C16/515 ,  C23C16/45536 ,  C23C16/45544 ,  H01J37/32183

Abstract: An apparatus for plasma enhanced atomic layer deposition and a method of forming thin film using the same are provided to prevent self bias effect and improve step difference property of a thin film by generating plasma through applying RF voltage while applying voltage pulse. A PEALD(plasma enhanced atomic layer deposition) apparatus comprises a power source for generating plasma. The power source comprises a first power generator(240a), a second power generator(240b) and a control box(235). The first power generator applies voltage pulse. The second power generator applies RF voltage having frequency which is greater than the voltage pulse. The control box is connected to the first and the second power generators and matches signals generated in the first and the second power generators. The control box can be connected to a shower head(230) for gas supply or a substrate holder(210).

Abstract translation: 提供了一种用于等离子体增强的原子层沉积的装置和使用其形成薄膜的方法，以通过在施加电压脉冲的同时施加RF电压来产生等离子体来防止自偏置效应并提高薄膜的差动特性。 PEALD（等离子体增强原子层沉积）装置包括用于产生等离子体的电源。 电源包括第一发电机（240a），第二发电机（240b）和控制箱（235）。 第一台发电机施加电压脉冲。 第二发电机施加频率大于电压脉冲的RF电压。 控制箱连接到第一和第二发电机并匹配在第一和第二发电机中产生的信号。 控制箱可以连接到用于气体供应的喷头（230）或衬底保持器（210）。

公开(公告)号：KR1020050072946A

公开(公告)日：2005-07-13

申请号：KR1020040001103

申请日：2004-01-08

Applicant: 삼성전자주식회사

Inventor： 김영일 ,  최상준 ,  마동준

IPC: H01L21/68

CPC classification number: C23C14/505 ,  C23C14/243 ,  H01L21/68707

Abstract: A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

公开(公告)号：KR1020050042701A

公开(公告)日：2005-05-10

申请号：KR1020030077762

申请日：2003-11-04

Applicant: 삼성전자주식회사

Inventor： 김대일 ,  마동준 ,  김국윤 ,  최성규

IPC: H01L21/00

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/3211

Abstract: 헬리컬 공진기형 플라즈마 처리장치가 개시된다. 개시된 플라즈마 처리 장치는, 처리 기판을 지지하는 기판 홀더를 가진 공정 챔버와, 공정 챔버 내부와 연통되도록 공정 챔버의 상부에 설치되는 유전체 관과, 유전체 관의 외부관 둘레에 감겨진 헬릭스 코일과, 헬릭스 코일에 RF 전력을 공급하기 위한 RF 전원을 구비한다. 상기 유전체 관은 내부관과 외부관으로 이루어진 2중 관 형태를 가지며, 상기 외부관에는 내부관과 외부관 사이의 공간에 플라즈마 소스가스를 공급하기 위한 소스가스 공급구가 형성된다. 상기 유전체 관의 내부에는 플라즈마의 전위를 제어하기 위한 제어 전극이 설치되며, 상기 제어 전극에는 소정의 전위를 인가하기 위한 가변 DC 전원이 연결된다. 이와 같은 구성에 의하면, 처리 기판의 반경방향을 따라 플라즈마의 밀도 분포가 보다 균일하게 이루어질 수 있으며, 플라즈마의 전위도 용이하게 제어할 수 있게 된다.

公开(公告)号：KR1020030049175A

公开(公告)日：2003-06-25

申请号：KR1020010079314

申请日：2001-12-14

Applicant: 삼성전자주식회사

Inventor： 톨마체프유리 ,  마동준 ,  문창욱 ,  윤혜영

IPC: H01L21/205

CPC classification number: H01J37/321 ,  H01J37/32357

Abstract: PURPOSE: An inductively coupled plasma system is provided to be capable of improving the uniformity of the radial dispersion of the gas flowed from plasma source and preventing the backflow of gas product to an inductor by using a gas dispersing panel and a shutter. CONSTITUTION: A susceptor is installed in a lower process chamber(2) for loading a substrate. An upper plasma source chamber(1) is installed on the upper portion of the lower process chamber. A reactive chamber(3) is installed in the upper plasma source chamber for supplying plasma reactant into the lower process chamber, wherein the reactive chamber includes a plurality of circular channels(33) for flowing gas. An inductor(4) is installed between the upper plasma source chamber and the reactive chamber for enclosing the reactive chamber. A plurality of shutter(9) are installed between the upper plasma source chamber and lower process chamber for switching opening portions. Preferably, the upper portion of the circular channel is connected with a gas manifold(20). Preferably, a plurality of gas dispersing panels(13) are installed at the upper portion of the circular channel, wherein the gas dispersing panel includes a plurality of orifices.

Abstract translation: 目的：提供电感耦合等离子体系统，以便能够改善从等离子体源流出的气体的径向分散的均匀性，并通过使用气体分散面板和快门来防止气体产物回流到电感器。 构成：将基座安装在用于装载基板的下部处理室（2）中。 上等离子体源室（1）安装在下处理室的上部。 反应室（3）安装在上等离子体源室中，用于将等离子体反应物供应到下处理室中，其中反应室包括用于流动气体的多个圆形通道（33）。 电感器（4）安装在上等离子体源室和用于封闭反应室的反应室之间。 多个挡板（9）安装在上等离子体源室和下处理室之间用于切换开口部分。 优选地，圆形通道的上部与气体歧管（20）连接。 优选地，多个气体分散面板（13）安装在圆形通道的上部，其中气体分散面板包括多个孔。

公开(公告)号：KR1020030048844A

公开(公告)日：2003-06-25

申请号：KR1020010078887

申请日：2001-12-13

Applicant: 삼성전자주식회사

Inventor： 이정현 ,  마동준 ,  민요셉 ,  윤혜영 ,  조영진

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: PURPOSE: A showerhead for chemical vapor reactor in which a source is uniformly emitted from an outlet of the showerhead is provided. CONSTITUTION: The showerhead(100) for chemical vapor reactor is characterized in that first, second and third circular plates(110,120,150) are sequentially laid up and formed in such a way that the side surface of the first, second and third circular plates is sealed, at least two of 'n' source injection holes(114) arranged on a concentric circle separated from the central axis in a certain distance with the 'n' source injection holes being spaced apart from each other in an equal gap, and a reaction gas injection hole(112) penetrating the first circular plate are formed on the first circular plate, a reaction gas passing hole(122) corresponding to the reaction gas injection hole, and 'n' sectors uniformly split centering around the source injection holes are formed on the second circular plate, first groove(126) formed with respectively spaced apart from the central axis and outer circumference in a certain distance at a line extended to the source injection holes from the central axis, a plurality of second grooves(128) formed with extended from the first groove to a position that is spaced apart from a boundary line of the sectors in a certain distance, and a plurality of source dispersion holes(130) at the lower part of the second grooves are formed in the sectors, and a source passing hole(152) formed correspondingly to the source dispersion holes so that a source passing the source dispersion holes passes through the third circular plate, third groove(154) separated from the source passing hole in a certain distance and opened to the reaction gas injection hole so that the third groove becomes a diffusion path of the reaction gas, and a plurality of reaction gas injection holes at the lower part of the third groove are formed on the third circular plate.

Abstract translation: 目的：提供一种化学气相反应器的喷头，其中源头从喷头的出口均匀地排出。 构成：用于化学气相反应器的喷头（100）的特征在于，第一，第二和第三圆形板（110,120,150）依次铺设并形成，使得第一，第二和第三圆形板的侧表面被密封 ，排列在与中心轴线隔开一定距离的同心圆上的'n'个源极注入孔中的至少两个，'n'个源极注入孔彼此间隔开间隔开，并且反应 在第一圆板上形成贯通第一圆板的气体注入孔（112），形成与反应气体注入孔对应的反应气体通过孔（122），以及以源喷射孔为中心的均匀分布的“n”个扇区 在所述第二圆板上，所述第一凹槽（126）形成为与所述中心轴线和所述外圆周分开间隔开一定距离，在从所述中心轴线延伸到所述源喷射孔的线 s，多个第二槽（128），其形成为从所述第一槽延伸到与所述扇区的边界线间隔一定距离的位置，以及在所述下部的多个源分散孔（130） 的第二凹槽形成在扇形部分中，源通孔（152）对应于源分散孔形成，使得通过源分散孔的源穿过第三圆形板，与源极分离的第三凹槽（154） 通孔一定距离，向反应气体注入孔开口，使第三槽成为反应气体的扩散路径，第三槽的下部形成有多个反应气体喷射孔，第三圆形 盘子。

公开(公告)号：KR1020020091949A

公开(公告)日：2002-12-11

申请号：KR1020010030771

申请日：2001-06-01

Applicant: 삼성전자주식회사

Inventor： 박현우 ,  나발라세르게이야코블레비크 ,  마동준 ,  김태완

IPC: H01L21/203

Abstract: PURPOSE: A sputtering apparatus for shifting a target is provided to form effectively a thin film having uniform thickness on a substrate in a sputtering process though a target is smaller than a substrate. CONSTITUTION: A discharge gas such as an argon gas is injected into a discharge gas inlet portion(12). A vacuum chamber(11) has an exhaust hole(13) in order to exhaust the gas. A substrate holder(14) is formed in the inside of the vacuum chamber(11). A substrate(15) is loaded on the substrate holder(14). A target electrode(17) facing the substrate holder(14) is used for fixing a target(18). A target electrode portion(16) includes the target(18) and the target electrode(17). A magnet(19) is formed in the inside of the target electrode portion(16) in order to generate a magnetic field. The target electrode portion(16) is connected with a shaft of a rotary portion(22). The target electrode portion(16) is connected with a supply shaft(24). The supply shaft(24) is connected with a power supply portion(21).

Abstract translation: 目的：提供用于移动靶的溅射装置，以通过靶小于衬底，在溅射工艺中有效地形成在衬底上具有均匀厚度的薄膜。 构成：将诸如氩气的放电气体注入放电气体入口部分（12）。 为了排出气体，真空室（11）具有排气孔（13）。 在真空室（11）的内部形成有基板支架（14）。 衬底（15）被装载在衬底保持器（14）上。 面对基板支架（14）的目标电极（17）用于固定目标（18）。 目标电极部分（16）包括靶（18）和目标电极（17）。 为了产生磁场，在目标电极部分（16）的内部形成磁体（19）。 目标电极部（16）与旋转部（22）的轴连接。 靶电极部16与供给轴24连接。 供给轴（24）与电源部（21）连接。