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公开(公告)号：KR1020160075045A
公开(公告)日：2016-06-29
申请号：KR1020140184502
申请日：2014-12-19
Applicant: 삼성전자주식회사
IPC: G02B6/26
CPC classification number: G02B6/34 , G02B6/1228 , G02B6/124 , G02B6/4206 , G02B6/4215 , G02B6/26 , G02B6/262 , G02B6/264
Abstract: 광커플러는제1 방향을따라상기제1 방향에실질적으로수직한제2 방향으로의폭이점차증가하여, 제1 단에서제1 폭을갖고제1 방향으로제1 단과대향하는제2 단에서제1 폭보다큰 제2 폭을갖는테이퍼부, 및테이퍼부의제2 단에연결되며, 테이퍼부의제1 단까지의거리보다큰 곡률반경을갖는그레이팅부를포함한다.
Abstract translation: 根据本发明，一种光耦合器包括：锥形单元，在第一端具有第一宽度，第一宽度具有第一宽度，第二端具有大于第一宽度的第二宽度，沿着第一宽度沿第一宽度增加的第二宽度 基本上垂直于第二方向的方向，并且包括在第一方向上彼此相对的第一端和第二端; 以及光栅单元，其联接到所述锥形单元的第二端，并且具有大于与所述锥形单元的第一端的距离的曲率半径。 本发明的目的是提供一种光耦合器，其具有反射到光波导的光量减少。
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公开(公告)号：KR1020140083466A
公开(公告)日：2014-07-04
申请号：KR1020120153250
申请日：2012-12-26
Applicant: 삼성전자주식회사
Abstract: The present invention relates to computing system and an operation method thereof. The computing system according to an embodiment of the present invention includes: a memory module including a semiconductor device with a built-in resonant optical device; an integrated circuit generating operation heat; and a thermal conductor which is used to deliver the operation heat to the semiconductor device.
Abstract translation: 本发明涉及计算系统及其操作方法。 根据本发明的实施例的计算系统包括：存储器模块，其包括具有内置谐振光学器件的半导体器件; 集成电路产生操作热; 以及用于将工作热传递到半导体器件的热导体。
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公开(公告)号：KR1020110092044A
公开(公告)日：2011-08-17
申请号：KR1020100011472
申请日：2010-02-08
Applicant: 삼성전자주식회사
CPC classification number: G02B6/12014 , G02B6/12028 , G02B6/12033 , G02B6/1347 , G02F1/025
Abstract: PURPOSE: A modulator using a bulk silicon substrate is provided to operates at high speed and widen an operation spectrum band. CONSTITUTION: A bulk silicon substrate(281) includes a trench which is etched with preset width and depth. A lower clad layer is formed in the trench of the bulk silicon substrate. A plurality of light wave guides(210,230,240,260) is formed on the lower clad layer. A phase modulation unit(270) is formed on the lower clad layer and modulates the phase of an optical signal passing through the light wave guide by modulating the refractive index of the light wave guide. An upper clad layer is formed on the phase modulation unit and the plurality of light wave guides.
Abstract translation: 目的：提供使用体硅衬底的调制器，以高速操作并扩大工作频带。 构成：体硅衬底（281）包括以预设宽度和深度蚀刻的沟槽。 在本体硅衬底的沟槽中形成下覆盖层。 多个光波导（210,230,240,260）形成在下包层上。 在下包层上形成相位调制单元（270），通过调制光波导的折射率来调制通过光波导的光信号的相位。 在相位调制单元和多个光波导上形成上包层。
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公开(公告)号：KR1020110082426A
公开(公告)日：2011-07-19
申请号：KR1020100002391
申请日：2010-01-11
Applicant: 삼성전자주식회사
IPC: H01L31/12
CPC classification number: H01L33/20 , H01L33/16 , H01L33/58 , H01L2933/0058
Abstract: PURPOSE: A semiconductor device and forming method thereof are provided to test a wafer level. CONSTITUTION: A reflector is placed on a trench which is formed by etching a silicon substrate(120). A lower cladding layer(140) is formed on the reflector. A core layer(160) is formed on the lower cladding layer. The core layer comprises an optical waveguide(170) and a grid. An upper cladding layer(180) is formed on the core layer with materials whose refractive index is lower than the core layer.
Abstract translation: 目的：提供半导体器件及其形成方法以测试晶片级。 构成：将反射体放置在通过蚀刻硅衬底（120）形成的沟槽上。 在反射器上形成下覆层（140）。 芯层（160）形成在下包层上。 芯层包括光波导（170）和网格。 在芯层上形成折射率低于芯层的材料的上包层（180）。
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公开(公告)号：KR1020110082425A
公开(公告)日：2011-07-19
申请号：KR1020100002390
申请日：2010-01-11
Applicant: 삼성전자주식회사
IPC: H01L31/12
CPC classification number: G02B6/43 , G02B6/12009 , G02B6/122 , H01L21/768
Abstract: PURPOSE: A semiconductor device and a forming method thereof are provided to inexpensively and easily generate a vertical grid coupler while maintaining optical coupling efficiency. CONSTITUTION: A silicon substrate(120) is etched to form a trench(TC). A lower cladding layer(140) is formed in the trench. A core layer(160) is formed on the upper part of the lower cladding layer. The core layer comprises an optical waveguide(170) and a grid(GRT). An upper cladding layer(180) is formed on the core layer by a material which has a refractive index lower than the core layer.
Abstract translation: 目的：提供半导体器件及其形成方法，以便在保持光耦合效率的同时廉价且容易地生成垂直栅极耦合器。 构成：蚀刻硅衬底（120）以形成沟槽（TC）。 在沟槽中形成下包层（140）。 芯层（160）形成在下包层的上部。 核心层包括光波导（170）和网格（GRT）。 通过折射率低于芯层的材料在芯层上形成上包层（180）。
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Patent Agency Ranking
公开(公告)号：KR1020110031070A
公开(公告)日：2011-03-24
申请号：KR1020100021117
申请日：2010-03-10
Applicant: 삼성전자주식회사
IPC: H01L21/77
CPC classification number: G02B6/428 , G02B6/4246
Abstract: PURPOSE: A memory module, a memory system including the same, and a manufacturing method thereof are provided to give or receive an optical signal through optical windows formed on an PCB and a memory package. CONSTITUTION: A PCB(11) includes a first optical window formed on the surface and an embedded optical waveguide(13). A memory package includes a memory die and a second optical window(40). The memory die is mounted on a PCB and includes an optical input and output part. A second optical window is formed on the same line as the optical input and output part and the first optical window. The optical waveguide and the optical input and output part give or receive an optical signal through the first and second optical windows.
Abstract translation: 目的：提供一种存储器模块，包括其的存储器系统及其制造方法，以通过形成在PCB和存储器封装上的光学窗口来提供或接收光学信号。 构成：PCB（11）包括形成在表面上的第一光学窗口和嵌入式光波导（13）。 存储器包括存储器管芯和第二光学窗口（40）。 存储芯片安装在PCB上，并包括光输入和输出部分。 第二光学窗口形成在与光学输入输出部分和第一光学窗口相同的线上。 光波导和光输入和输出部分通过第一和第二光学窗口给出或接收光信号。
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公开(公告)号：KR1020090053490A
公开(公告)日：2009-05-27
申请号：KR1020070120355
申请日：2007-11-23
Applicant: 삼성전자주식회사
CPC classification number: G11C29/56 , G01R31/2889 , G01R31/31905 , G11C2029/5602
Abstract: Example embodiments provide a probe card having an optical transmitting unit and a memory tester having the probe card. The probe card may include a plurality of needles connected to test terminals formed in a memory, a plurality of first terminals connected to the needles, a plurality of second terminals connected to the outside and corresponding to the first terminals, and an optical transmitting unit. The optical transmitting unit may connect the first terminals and the second terminals.
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公开(公告)号：KR1020090045656A
公开(公告)日：2009-05-08
申请号：KR1020070111589
申请日：2007-11-02
Applicant: 삼성전자주식회사
IPC: G02B6/43
Abstract: 본 발명은 광 연결 모듈에 관하여 개시한다. 개시된 광 연결 모듈은, 광섬유가 삽입되는 복수의 광섬유 가이드홀과, 복수의 제1정렬홀이 형성된 광섬유 커넥터, 상기 광섬유 커넥터의 광섬유와 광통신을 하는 광소자가 배치되며, 상기 정렬홀과 대응되는 정렬홈이 형성된 기판과, 상기 광섬유 커넥터 및 상기 기판 사이에서, 그들 사이의 수직 이격높이를 한정하며, 상기 제1정렬홀에 대응되는 제2정렬홀을 가지며, 상기 광섬유 및 상기 광소자를 정렬시키는 정렬부재를 구비하는 것을 특징으로 한다.
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公开(公告)号：KR100754407B1
公开(公告)日：2007-08-31
申请号：KR1020060051462
申请日：2006-06-08
Applicant: 삼성전자주식회사
IPC: H01S5/00
Abstract: A submount and a multi-beam laser diode module having the same are provided to prevent the generation of thermal cross-talk between ridges by flip-chip bonding a multi-beam laser diode to the submount to directly discharge heat generated from the ridges of the laser diode to a heat sink through the submount. The submount includes a first substrate(120), a plurality of first solder layers(121), a first submount, a second substrate(130), and a plurality of bonding pads(132). The plurality of first solder layers(121) are formed on the first substrate(120) in correspondence to electrodes(115) of a multi-beam laser diode(110). The first submount penetrates through the first substrate(120), and has a plurality of via holes(122) which are filled with conductive materials electrically connected to the first solder layers(121). The second substrate(130) is located under the first substrate(120). The plurality of bonding pads(132) are formed on the second substrate(130) by the same number as that of the electrodes(115), and are electrically connected to the conductive materials filled in the via holes(122).
Abstract translation: 提供一种基座和具有该基座的多光束激光二极管模块，以通过将多光束激光二极管倒装键合到基座上以防止在脊之间产生热串扰，从而直接排出从基座的脊 激光二极管通过基座安装到散热片上。 基座包括第一基板（120），多个第一焊料层（121），第一基座，第二基板（130）以及多个接合焊盘（132）。 对应于多束激光二极管（110）的电极（115），在第一基板（120）上形成多个第一焊料层（121）。 第一基台贯穿第一基板120，并具有多个通孔122，所述通孔填充有与第一焊料层121电连接的导电材料。 第二基板（130）位于第一基板（120）的下方。 多个接合焊盘132形成在第二基板130上的数量与电极115的数量相同，并且电连接到填充在通孔122中的导电材料。
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公开(公告)号：KR1020070000290A
公开(公告)日：2007-01-02
申请号：KR1020050055902
申请日：2005-06-27
Applicant: 삼성전자주식회사
IPC: H01S5/30
CPC classification number: H01S5/32341 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/22
Abstract: A semiconductor laser diode with an asymmetric waveguide layer is provided to reduce a threshold current and to improve light extraction efficiency by preventing light loss owing to a p-type impurity. A semiconductor laser diode includes an n-bottom clad layer(21), an n-waveguide layer(22), an active layer(23), a p-waveguide layer(24) and a p-top clad layer(26) formed on a substrate(20). The n-waveguide layer is thicker than the p-waveguide layer. The thickness of the n-waveguide is 50nm-1000nm. The p-waveguide layer is formed with one layer or multi layer structure using a material including In(x)Ga(1-x)N where x is equal to or larger than 0 and is equal to or smaller than 0.2. The p-top clad layer has a mesa structure whose center is projected, and a p-electrode(27) is formed on the p-top clad layer.
Abstract translation: 提供具有不对称波导层的半导体激光二极管以减少阈值电流并且通过防止由p型杂质引起的光损失来提高光提取效率。 半导体激光二极管包括n形底层包层（21），n波导层（22），有源层（23），p波导层（24）和形成的p顶覆盖层（26） 在衬底（20）上。 n波导层比p波导层厚。 n波导的厚度为50nm-1000nm。 使用包括In（x）Ga（1-x）N的材料，其中x等于或大于0并且等于或小于0.2的材料，使用一层或多层结构形成p波导层。 p型顶覆层具有中心突出的台面结构，在p顶包层上形成p电极（27）。
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