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公开(公告)号：KR1020120105682A
公开(公告)日：2012-09-26
申请号：KR1020110023272
申请日：2011-03-16
Applicant: 전남대학교산학협력단
Abstract: PURPOSE: A quaternary zinc oxide thin film, a method for manufacturing the same, and an electronic device comprising the same are provided to obtain a quaternary zinc oxide thin film with bandgap energy of 3.7eV or greater and a low specific resistance of 10^-3Ωcm through co-doping of magnesium and group III elements. CONSTITUTION: A quaternary zinc oxide thin film comprises magnesium and one or more of group III elements consisting of indium, gallium, and aluminum. In order to implement co-doping, the doping concentration of magnesium is fixed while the doping concentration of the group III element is controlled. The resistance value of the group III element ranges from 10×10^-3Ωcm to 7×10^-4Ωcm. [Reference numerals] (AA) Generally used TCO material ·Low specific resistance ·Wide band-gap energy ·In is rare metal and too expensive ·Low chemical thermal stability; (BB) ZnO is an inexpensive material ·ZnO has low specific resistance ·Using ZnO doped with group III element primarily·Expressing superior optical, electric characteristics(3.5-3.6eV, 10^-4Ωcm); (CC) Mg is a generally used band-gap engineering element ·Band-gap energy(3.3eV-5.0eV) of an MZO thin film ·High specific resistance(10^5Ωcm); (DD) Band-gap arrangement problem of a TCO (3.5eV)/ZnS(3.65eV)/CIGS(1.5eV)/Mo structure ·Embodiment of UV-LED( 10^-4Ωcm) is necessary
Abstract translation: 目的：提供四次氧化锌薄膜，其制造方法及其制造方法，以获得具有3.7eV以上的带隙能量和10 ^以下的电阻率的四次氧化锌薄膜， 通过镁和III族元素的共掺杂，3Ωcm。 构成：四氧化锌薄膜包含镁和由铟，镓和铝组成的III族元素中的一种或多种。 为了实现共掺杂，镁的掺杂浓度固定，同时控制III族元素的掺杂浓度。 III族元素的电阻值范围为10×10 ^-3Ωcm至7×10 ^-4Ωcm。 （参考号）（AA）一般使用的TCO材料·低电阻率·宽带隙能量·稀有金属太贵·化学品热稳定性低; （BB）ZnO是一种便宜的材料·ZnO具有低电阻率·主要使用掺杂III族元素的ZnO·表现出优异的光电特性（3.5-3.6eV，10 ^-4Ωcm）; （CC）Mg是通常使用的带隙工程元素·MZO薄膜的带隙能量（3.3eV-5.0eV）·高电阻率（10 ^5Ωcm）; （DD）TCO（3.5eV）/ ZnS（3.65eV）/ CIGS（1.5eV）/ Mo结构的带隙排列问题·UV-LED（<3.7eV）的实施例。 （EE）对新的TCO材料（带隙能量：<3.75eV，电阻率> 10 ^-4Ωcm）的研究是必要的
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22.发明公开ＣＺＴＳＳ 나노입자 전구체 및 제조방법과 상기 전구체를 이용한 고품질 ＣＺＴＳＳ 나노입자 및 제조방법 有权CU2ZNSN（S，SE）4纳米颗粒（CZTSS NANO-PARTICLE）前体，用于生产前体的方法，使用前体的CZTSS纳米颗粒和生产CZTSS纳米颗粒的方法
公开(公告)号：KR1020120017719A
公开(公告)日：2012-02-29
申请号：KR1020100080491
申请日：2010-08-19
Applicant: 전남대학교산학협력단
Abstract: PURPOSE: A copper-zinc-tin-sulfur-selenium(CZTSS)-based nano-particle precursor, a method for manufacturing the same, the CZTSS-based nano-particles using the same, and a method for manufacturing the nano-particles are provided to synthesize the CZTSS-based nano-particle precursor by hardly using toxic materials. CONSTITUTION: A CZTSS-based nano-particle precursor is synthesized by irradiating microwave to a reacting solution containing copper, zinc, tin, and sulfur. The composition ratio of the copper, the zinc, the tin, the sulfur is adjusted according to the pH value of the reacting solution. The microwave irradiation is implemented for 5 minutes to 1 hours under 100-700W. A method for manufacturing the CZTSS-based nano-particle precursor includes the following: the reacting solution is prepared; the pH value of the reacting solution is adjusted; the microwave is irradiated to the reacting solution. The CZTSS nano-particle precursor is separated.
Abstract translation: 目的：一种基于铜 - 锌 - 锡 - 硫 - 硒（CZTSS）的纳米颗粒前体及其制备方法，使用该纳米颗粒的CZTSS基纳米颗粒及其制备方法 提供用于通过几乎不使用有毒材料合成基于CZTSS的纳米颗粒前体。 构成：通过将微波照射到含有铜，锌，锡和硫的反应溶液中来合成基于CZTSS的纳米颗粒前体。 根据反应溶液的pH值调节铜，锌，锡，硫的组成比。 微波照射在100-700W下实施5分钟至1小时。 制造基于CZTSS的纳米颗粒前体的方法包括：制备反应溶液; 调整反应溶液的pH值; 将微波照射到反应溶液。 分离CZTSS纳米颗粒前体。
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公开(公告)号：KR101079174B1
公开(公告)日：2011-11-03
申请号：KR1020090072144
申请日：2009-08-05
Applicant: 전남대학교산학협력단
Abstract: 본발명은이중층분리막을이용한탈수소화반응을통한탄화수소계가스제조시스템에관한것으로, 보다자세하게는산소가접촉하는측은산소와반응하지않는물질로코팅된분말로이루어진박막층및 산소가접촉하지않는측은수소투과율이우수한물질로이루어진투과층으로이루어진이중충분리막을이용하여탄화수소계가스를제조할수 있는이중층분리막을이용한탈수소화반응을통한탄화수소계가스제조시스템에관한것이다.
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24.发明公开ＣＺＴＳ나노입자 전구체 제조방법, 제조된 전구체, 전구체를 이용한 고품질 ＣＺＴＳ나노입자 제조방법 및 제조된 고품질 ＣＺＴＳ나노입자 有权生产CZTSNANO-PARTICLE前体的方法，生产前体的方法，使用前体制备CZTSNANO-颗粒的方法和生产的NANO-PARATLE
公开(公告)号：KR1020110112977A
公开(公告)日：2011-10-14
申请号：KR1020100032248
申请日：2010-04-08
Applicant: 전남대학교산학협력단
Abstract: 본 발명은 CZTS 나노입자(Cu
2 ZnSnS
4 nano-particle) 제조방법에 관한 것으로, 보다 구체적으로는 독성물질을 사용하지 않고 Cu
2 ZnSnS
4 나노입자 전구체를 합성하는 제조방법, 그 방법으로 제조된 전구체 및 제조된 전구체를 황화 열처리 하여 고품질 Cu
2 ZnSnS
4 나노입자를 제조하는 방법 및 제조된 고품질 Cu
2 ZnSnS
4 나노입자에 관한 것이다.-
公开(公告)号：KR100993933B1
公开(公告)日：2010-11-12
申请号：KR1020080080671
申请日：2008-08-19
Applicant: 전남대학교산학협력단
Abstract: 본 발명은 산화아연(ZnO) 박막의 제조 및 그 박막의 표면 형상을 제어하는 방법에 관한 것으로, 보다 구체적으로는 수열합성법을 이용한 에피택셜 산화아연 박막의 성장과 그 박막이 형성된 기판이 존재하는 수열합성용 용액의 온도 조건 변화를 통해 제어된 표면 형상을 갖는 산화아연 박막의 제조방법을 제공한다.
본 발명의 제어된 표면 형상을 갖는 산화아연 박막 제조방법은 수열합성법과 수열합성용 용액의 온도 조건 변화를 이용함으로써, 저온에서 저가의 간단한 공정으로 잘 제어된 표면 형상을 갖는 산화아연 박막을 제조할 수 있는 효과를 제공한다.
또한, 본 발명의 제조방법에 의해 제조된 산화아연 박막은 결정성과 광학적 특성이 우수하여 태양전지와 발광다이오드(LED) 등의 광학소자에 투명 전도체를 제조하는 데에 응용할 수 있는 효과를 제공한다.
수열합성법, 산화아연 박막, 에피택셜 성장, 표면 형상 제어-
Patent Agency Ranking
公开(公告)号：KR1020100096533A
公开(公告)日：2010-09-02
申请号：KR1020090015444
申请日：2009-02-24
Applicant: 전남대학교산학협력단
IPC: H01L31/04
Abstract: PURPOSE: An optical absorption layer for a solar battery and a manufacturing method thereof are provided to improve reliability and yield by depositing SiO2 or the SiNx compound on a thin film through a PECVD(Plasma-Enhanced Chemical Vapor Deposition) method. CONSTITUTION: A predetermined amount of Se is deposited on a thin film according to composition ratio(S100). A protective layer is formed on the deposited Se(S200). The thin film is heat-treated(S300). The protective layer is removed by an etching process(S400). A ternary thin film includes CIS or CIGS. The protective layer is formed by depositing SiO2 or SiNx.
Abstract translation: 目的：提供一种用于太阳能电池的光吸收层及其制造方法，以通过PECVD（等离子体增强化学气相沉积）方法将SiO 2或SiN x化合物沉积在薄膜上来提高可靠性和产率。 构成：按照组成比将预定量的Se沉积在薄膜上（S100）。 在沉积的Se上形成保护层（S200）。 对薄膜进行热处理（S300）。 通过蚀刻工艺去除保护层（S400）。 三元薄膜包括CIS或CIGS。 保护层通过沉积SiO 2或SiN x形成。
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公开(公告)号：KR1020080085401A
公开(公告)日：2008-09-24
申请号：KR1020070026858
申请日：2007-03-19
Applicant: 전남대학교산학협력단
CPC classification number: H01L33/44 , H01L2933/0083
Abstract: A light emitting diode having a micro lens is provided to realize excellent optical transmissivity and high adhesive property with respect to a substrate by forming the micro lens with an ultraviolet rays hardening adhesive agent. An N-type semiconductor layer(140), an active layer(150), and a P-type semiconductor layer(160) are sequentially laminated on a substrate(110). A part of the N-type semiconductor layer is exposed by removing a region from the P-type semiconductor layer to a part of the N-type semiconductor layer. An N-type electrode pad(190) is formed on an upper portion of the exposed N-type semiconductor layer. A transparent conductive layer is formed on an upper portion of the P-type semiconductor layer. A P-type electrode pad(180) is formed on an upper portion of the P-type semiconductor layer. Micro lenses made of an ultraviolet rays hardening adhesive agent are arranged on an upper portion of the transparent conductive layer.
Abstract translation: 提供具有微透镜的发光二极管，通过用紫外线固化粘合剂形成微透镜来实现相对于基板的优异的透光性和高粘合性。 在衬底（110）上依次层叠N型半导体层（140），有源层（150）和P型半导体层（160）。 通过从P型半导体层去除一部分N型半导体层而使N型半导体层的一部分露出。 在暴露的N型半导体层的上部形成有N型电极焊盘（190）。 在P型半导体层的上部形成透明导电层。 P型电极焊盘（180）形成在P型半导体层的上部。 在透明导电层的上部配置由紫外线固化型粘合剂构成的微透镜。
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公开(公告)号：KR100830255B1
公开(公告)日：2008-05-16
申请号：KR1020070078584
申请日：2007-08-06
Applicant: 전남대학교산학협력단
CPC classification number: C01B3/501 , C01B13/0251 , C01B2210/001
Abstract: A method for producing and separating high-purity oxygen and hydrogen from fossil fuel without emission of carbon dioxide is provided to minimize use of fossil fuel, produce high-purity oxygen and hydrogen, prevent air pollution by preventing carbon dioxide from emitting into the atmosphere, and minimize heat loss by performing all processes at high temperatures. A method for producing and separating high-purity oxygen and hydrogen from fossil fuel without emission of carbon dioxide comprises: a first step(S1) of reforming a fossil fuel by a steam reforming process, a partial oxidation process, or an automatic thermal process to prepare a mixed gas containing hydrogen, carbon dioxide, carbon monoxide, and water vapor; a second step(S2) of separating hydrogen from the mixed gas by using a hydrogen separation membrane to prepare a carbon dioxide-rich gas; a third step(S3) of separating oxygen from the carbon dioxide-rich gas by using an oxygen separation membrane to prepare a carbon monoxide-rich gas; and a fourth step(S4) of reacting the carbon monoxide-rich gas with water to prepare a residual gas having the same composition as the mixed gas prepared in the first step, wherein the steps(S1,S2,S3,S4) are circulated by supplying the residual gas prepared in the fourth step into the mixed gas of the second step.
Abstract translation: 提供了一种从化石燃料中生产和分离高纯氧和氢而不排放二氧化碳的方法，以最大限度地减少化石燃料的使用，产生高纯氧和氢，通过防止二氧化碳排放到大气中来防止空气污染， 并通过在高温下进行所有工艺来减少热损失。 一种在不排放二氧化碳的情况下从化石燃料中生产和分离高纯度氧和氢的方法包括：通过蒸汽重整过程，部分氧化工艺或自动热处理对化石燃料进行重整的第一步骤（S1） 制备含有氢气，二氧化碳，一氧化碳和水蒸汽的混合气体; 通过使用氢分离膜从混合气体中分离氢以制备富含二氧化碳的气体的第二步骤（S2） 通过使用氧分离膜从富含二氧化碳的气体中分离氧以制备富含一氧化碳的气体的第三步骤（S3） 和使一氧化碳富含气体与水反应以制备与第一步骤中制备的混合气体具有相同组成的残余气体的第四步骤（S4），其中步骤（S1，S2，S3，S4）循环 通过将第四步骤中制备的残留气体供应到第二步骤的混合气体中。
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公开(公告)号：KR101874238B1
公开(公告)日：2018-07-03
申请号：KR1020170036807
申请日：2017-03-23
Applicant: 전남대학교산학협력단
IPC: C01G30/00
CPC classification number: C01G30/002 , C01P2004/16 , C01P2004/64
Abstract: 공융용매를이용한구리칼코게나이드화합물의제조방법에관한것으로, 보다상세하게는단일포트콜로이드합성방법을적용하고공융용매를이용하여구리칼코게나이드화합물을제조하는제조방법이제공된다. 본발명은공정의편리성을제공하고무독성의저렴한시약을사용하여친환경적이며이로인해공정단가를낮을수 있다. 또한, 낮은전이온도를가지며공기와물에안정적인공융용매를사용하여구리칼코게나이드화합물을제조함에따라제조되는구리칼코게나이드나노입자는광전기, 물분해, 태양전지의조립및 나노잉크형성에사용될수 있다.
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公开(公告)号：KR101857908B1
公开(公告)日：2018-05-15
申请号：KR1020170022168
申请日：2017-02-20
Applicant: 전남대학교산학협력단
IPC: C01G19/00 , H01L31/032 , H01L31/0445
CPC classification number: Y02E10/50 , C01G19/006 , C01P2002/30 , H01L31/0324 , H01L31/0445
Abstract: 친환경적으로단분산구리칼코지나이드계나노결정을합성하는방법에제공된다. 식물성오일인용매와금속염들을포함하는용액을가열하여금속전구체복합체용액을형성하는단계와, 금속전구체복합체와황을포함하는용액을혼합하여혼합용액을형성하는단계와, 혼합용액을소정온도로가열하고소정시간동안유지하여나노결정을합성하는단계를포함한다. 이러한합성방법은저비용이면서친환경적인식물성오일을용매로하며, 나노결정의크기를제어할수 있다.
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