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公开(公告)号：KR100926177B1
公开(公告)日：2009-11-10
申请号：KR1020070130399
申请日：2007-12-13
Applicant: 한국과학기술연구원
Abstract: 본 발명은 니켈 폼(Ni foam) 전류포집기(current collector)에 부착된 탄소 나노 파이버(carbon nano fiber, CNF)와 망간 산화물(Manganese oxide, MnO
2 )을 이용한 슈퍼 캐패시터에 관한 것이다. 더욱 상세하게는 본 발명에 의해 제조된 전극은 망간 산화물과 고정된 탄소 나노 파이버의 높은 비표면적의 결합으로 비축전용량(specific capacitance) 및 비에너지 밀도가 큰 슈퍼 캐패시터에 관한 것이다.
망간 산화물(Manganese oxide), 고정형 탄소 나노 파이버(Immobilized carbon nano fibers, CNF), 니켈 폼(Nickel foam), 전기화학 캐패시터(Electrochemical capacitors), 고에너지밀도(High specific energy density)-
公开(公告)号：KR1020090041794A
公开(公告)日：2009-04-29
申请号：KR1020070107464
申请日：2007-10-24
Applicant: 한국과학기술연구원
IPC: H01L21/8247 , H01L27/115
CPC classification number: G11C13/0007 , G11C2213/31 , H01L21/28273
Abstract: A manufacturing method of a thin film structure for a resistive random access memory device is provided to increase the number of devices per unit dimension by lowering a manufacturing process temperature of a multilayer thin film into a room temperature. A bottom electrode is formed on a substrate. A perovskite oxide thin film is formed on the bottom electrode. A top electrode is formed on the perovskite oxide thin film. The perovskite oxide thin film, the bottom electrode, and the top electrode are formed in a state in which a substrate temperature is maintained into a room temperature. The perovskite oxide thin film, the bottom electrode, and the top electrode are formed in a low pressure state less than a room pressure.
Abstract translation: 提供了一种用于电阻随机存取存储器件的薄膜结构的制造方法，通过将多层薄膜的制造工艺温度降低到室温来增加每单位尺寸的器件数量。 底部电极形成在基板上。 在底部电极上形成钙钛矿氧化物薄膜。 顶部电极形成在钙钛矿氧化物薄膜上。 在将基板温度维持在室温的状态下形成钙钛矿型氧化物薄膜，底部电极和顶部电极。 钙钛矿氧化物薄膜，底电极和顶电极形成在低于室压的低压状态。
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公开(公告)号：KR100655366B1
公开(公告)日：2006-12-08
申请号：KR1020050059635
申请日：2005-07-04
Applicant: 한국과학기술연구원
Abstract: A coating agent having heat and abrasion resistance and low friction characteristics coated on the operating body such that an operating body such as a rotation shaft operated at high speed in the non-oiled state under high temperature(700 to 900 deg.C) environment can well resist against friction, heating and abrasion caused by contact of the operating body with bearings, and a coating method capable of maintaining durability of the coating agent coated on the operating body for a long time are provided. A coating agent coated on a surface of an operating body of machinery and equipment comprises: 20 to 40 wt.% of chromium oxide(Cr2O3), 40 to 60 wt.% of a binder, 10 to 20 wt.% of tungsten disulfide(WS2), and 10 to 20 wt.% of silver(Ag). A coating agent coated on a surface of an operating body of machinery and equipment comprises: 20 to 40 wt.% of chromium oxide(Cr2O3), 30 to 50 wt.% of a binder, 10 to 20 wt.% of tungsten disulfide(WS2), 10 to 20 wt.% of silver(Ag), and 10 to 20 wt.% of molybdenum oxide(MoO3). A coating method of a coating agent coated on a surface of an operating body(19) of machinery and equipment comprises the steps of: (a) crushing the coating agent; (b) crushing a binder; (c) primarily coating the crushed binder on the surface of the operating body; (d) secondly coating the crushed coating agent on a first coating layer(22) of the binder; and (e) grinding and polishing a surface of a second coating layer(24) of the coating agent.
Abstract translation: 在操作体上涂布具有耐热磨损性和低摩擦特性的涂层剂，使得在高温（700-900℃）环境下以高速操作的旋转轴等操作体可以在非油状态下操作 能够良好地抵抗由于操作体与轴承的接触而产生的摩擦，加热，磨损，能够长时间保持涂敷在操作体上的涂敷剂的耐久性的涂敷方法。 涂覆在机器和设备的操作体表面上的涂层剂包括：20至40重量％的氧化铬（Cr 2 O 3），40至60重量％的粘合剂，10至20重量％的二硫化钨（ WS2）和10至20重量％的银（Ag）。 涂覆在机器和设备的操作体表面上的涂层剂包括：20至40重量％的氧化铬（Cr 2 O 3），30至50重量％的粘合剂，10至20重量％的二硫化钨（ WS2），10至20重量％的银（Ag）和10至20重量％的氧化钼（MoO 3）。 涂覆在机器和设备的操作体（19）的表面上的涂覆剂的涂覆方法包括以下步骤：（a）破碎涂覆剂; （b）压碎粘合剂; （c）将破碎的粘合剂主要涂布在操作体的表面上; （d）第二次将粉碎的涂覆剂涂覆在粘合剂的第一涂层（22）上; 和（e）研磨和抛光涂层剂的第二涂层（24）的表面。
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公开(公告)号：KR1020040071940A
公开(公告)日：2004-08-16
申请号：KR1020030007861
申请日：2003-02-07
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for preparing a nano-film by selective area coating is provided, to prepare a metal/oxide multilayered bottom-up nano-film without the deterioration of characteristics. CONSTITUTION: The method comprises the steps of preparing a charged particle of an atom or molecule unit by using a material forming a thin film; forming a bias locally on the electrode where nano-sized pattern is formed; and coating the charged particle on the nano-pattern selectively to form a nano-film. Preferably the material forming a thin film is at least one selected from the group consisting of metals, oxides and nitrides; and a substrate (electrode) is locally biased by the self-bias due to the difference of area or the difference of charge density.
Abstract translation: 目的：提供一种通过选择性区域涂布制备纳米膜的方法，以制备金属/氧化物多层自下而上的纳米膜，而不会降低其特性。 构成：该方法包括通过使用形成薄膜的材料制备原子或分子单元的带电粒子的步骤; 在形成纳米尺寸图案的电极上局部形成偏压; 并且选择性地在纳米图案上涂覆带电粒子以形成纳米膜。 优选地，形成薄膜的材料是选自金属，氧化物和氮化物中的至少一种; 并且由于面积的差异或电荷密度的差异，基板（电极）被自偏置局部偏置。
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公开(公告)号：KR100321561B1
公开(公告)日：2002-01-23
申请号：KR1019990050777
申请日：1999-11-16
Applicant: 한국과학기술연구원
IPC: H01L21/8247
Abstract: 본발명은 RF 마그네트론스퍼터링시스퍼터링이일어나는진공챔버내의압력을 200 내지 300 밀리토르(mTorr)로유지하여휘발성분의손실을감소시킨다성분산화물강유전체박막, 특히비스무트층상산화물로된 강유전체박막의제조방법을제공한다. 본발명은또한스퍼터링시타겟과기판과의거리를 3 내지 5 cm로하고기판을타겟중심선에서벗어나게위치시켜우수한강유전특성을부여하는, RF 마그네트론스퍼터링법을이용한강유전체박막의제조방법을제공한다. 그밖에도본 발명은, 스퍼터링시타겟면에대한기판면의각도를 30°내지 60°로하여우수한강유전특성을부여하는, RF 마그네트론스퍼터링법을이용한강유전체박막의제조방법을제공한다.
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Patent Agency Ranking
公开(公告)号：KR100275782B1
公开(公告)日：2000-12-15
申请号：KR1019950011460
申请日：1995-05-10
Applicant: 한국과학기술연구원
IPC: H01L21/20
CPC classification number: C23C14/088 , C23C14/024
Abstract: PURPOSE: A method for manufacturing a ferroelectric thin film is provided to restrict a fine crack by using a sputtering method or a laser ablation method. CONSTITUTION: A ferroelectric thin film(120) of Pb(Zr1-xTix)O3 is formed by using one method selected from a pure sol-gel method such as a spin coating and a dip coating, MOCVD, LSCVD, and MOD. A buffering layer(110,130) including a component of Pb is inserted in the process for manufacturing the ferroelectric thin film(120). The buffering layer(110,130) has a thickness of 10-100nm. The buffering layer(110,130) is formed with one of Pb(Zr1-xTix))3, PbO, and PbTiO3 including Pb.
Abstract translation: 目的：提供一种制造铁电薄膜的方法，通过使用溅射法或激光烧蚀法来限制微细裂纹。 构成：通过使用选自旋涂法，浸涂法，MOCVD法，LSCVD法和MOD法等纯溶胶 - 凝胶法的一种方法形成Pb（Zr1-xTix）O3的铁电薄膜（120）。 在制造铁电薄膜（120）的过程中插入包括Pb成分的缓冲层（110,130）。 缓冲层（110,130）的厚度为10-100nm。 缓冲层（110,130）由包含Pb的Pb（Zr1-xTix）3，PbO和PbTiO3中的一种形成。
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公开(公告)号：KR1020000051987A
公开(公告)日：2000-08-16
申请号：KR1019990002743
申请日：1999-01-28
Applicant: 한국과학기술연구원
Inventor： 이전국
IPC: H01L21/316
Abstract: PURPOSE: A shower head of an apparatus for forming a large area-thin oxide film is to enhance the uniformity of thickness of an oxide film formed on the upper surface of a substrate. CONSTITUTION: An apparatus for forming a large area-thin oxide film comprises: a heating chuck(13) disposed at the inside of a chamber(11); a pumping port disposed below the chamber; and a shower head(14) disposed on the heating chuck, and having a gas distributor(21) for injecting a process gas onto a substrate(12). The gas distributor comprises a plurality of gas distributors arranged in multi-steps. The gas distributors have a pyramid shape and the gas distributors are assembled by a bolt such that they are easily assembled or disassembled. The gas distributor comprises a gas staying part at which an introduced gas is temporarily stayed and a gas injecting hole communicating with the gas staying part, for injecting the gas downward.
Abstract translation: 目的：形成大面积薄氧化膜的装置的花洒头是为了提高形成在基板上表面的氧化膜的厚度均匀性。 构成：用于形成大面积薄氧化膜的装置包括：设置在室（11）内部的加热卡盘（13）; 设置在所述室下方的抽吸口; 以及设置在所述加热卡盘上的喷头（14），并且具有用于将处理气体注入到基板（12）上的气体分配器（21）。 气体分配器包括多个排列成多级的气体分配器。 气体分配器具有金字塔形状，并且气体分配器通过螺栓组装，使得它们易于组装或拆卸。 气体分配器包括暂时引入气体的气体滞留部分和与气体滞留部分连通的气体注入孔，用于向下注入气体。
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公开(公告)号：KR100233999B1
公开(公告)日：1999-12-15
申请号：KR1019960017011
申请日：1996-05-20
Applicant: 한국과학기술연구원
IPC: H01L27/04
Abstract: 본 발명에 의한 Pb(Zr
1-X Ti
X )O
3 강유전 박막 제조방법은, 스퍼터링법이나 레이저 에블레이션법을 이용한 Pb(Zr
1-X Ti
X )O
3 강유전 박막 제조방법에 있어서, 상기 강유전 박막 제조시 이용되는 증착조건 중, 타겟 성분의 Pb량(또는 PbO량)을, 증착된 박막의 조성이 20-60% 범위의 과량의 PbO 성분이 함유되도록 조절하거나, 혹은 그 증착압력을 5-100mTorr로 조절하여, 상기 Pb(Zr
1-X Ti
X )O
3 강유전 박막을 저온증착하도록 이루어져, 1) 씨앗층을 도입하지 않고서도 기존의 경우보다 낮은 온도에서 우수한 결정성을 갖는 Pb(Zr
1-X Ti
X )O
3 강유전 박막을 제조할 수 있고, 2) 고온증착시 발생되는 박막 조성 조절의 어려움이나 상기 박막을 사용하여 제조한 강유전 기억소자의 스위칭 특성 저하 등과 같은 현상을 제거할 수 있으며, 3) Pb(Zr
1-X Ti
X )O
3 강유전 박막의 피로 특성을 향상시킬 수 있는 고신뢰성의 Pb(Zr
1-X Ti
X )O
3 강유전 박막을 구현할 수 있게 된다.-
公开(公告)号：KR1019960042928A
公开(公告)日：1996-12-21
申请号：KR1019950011460
申请日：1995-05-10
Applicant: 한국과학기술연구원
IPC: H01L21/20
Abstract: 본 발명은 강유전 박막 제조방법에 관한 것으로, 스퍼터링 법이나 레이저 에블레이션법 등을 이용한 Pb(Zr
1-x Ti
x )O
3 (PZT) 강유전 박막 제조에 있어서, 잉여의 Pb성분을 함유한 완충층이 삽입되어 복합 증착되도록 강유전 박막을 형상하므로써, 1) 미세크랙이 없는 우수한 전기적 특성을 보유한 박막 제조가 가능하고, 2)전극과 박막 계면 부위에서의 산소나 Pb이온의 부족현상을 억제할 수 있으며, 또한 3) 스퍼터 입자들의 에너지를 쉽게 흡수할 수 있어, 강유전물질 박막 응용물에도 적용 가능한 고신뢰성의 PZT 강유전 박막을 구현할 수 있게 된다. -
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