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公开(公告)号：KR1020130010246A
公开(公告)日：2013-01-28
申请号：KR1020110070916
申请日：2011-07-18
Applicant: 한국광기술원
CPC classification number: H01L2224/27013 , H01L2224/73204 , H01L2224/83192
Abstract: PURPOSE: A light emitting diode device assembly, a substrate assembly for manufacturing the same, and a manufacturing method thereof are provided to improve the reliability of an LED device assembly by maintaining a bonding state without change and using silicon. CONSTITUTION: A dam(120) is fixed to a substrate(110) using silicon and is formed on the substrate with a preset height. A light emitting diode device(130) is formed on the lower side of a bump to supply power. A conductive silicon resin(140) is located in the dam on the substrate. The conductive silicon resin electrically connects the light emitting diode device to the substrate.
Abstract translation: 目的：提供一种发光二极管器件组件，其制造用基板组件及其制造方法，其通过保持接合状态而不改变并使用硅来提高LED器件组件的可靠性。 构成：使用硅将坝（120）固定到衬底（110）上，并以预设高度形成在衬底上。 在凸块的下侧形成发光二极管装置（130）以供电。 导电硅树脂（140）位于基板上的坝中。 导电硅树脂将发光二极管器件电连接到衬底。
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公开(公告)号：KR101093208B1
公开(公告)日：2011-12-13
申请号：KR1020100075155
申请日：2010-08-04
Applicant: 한국광기술원
IPC: H01L33/58
CPC classification number: H01L33/58 , H01L33/08 , H01L33/10 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0033 , H01L2933/0058
Abstract: PURPOSE: An LED and a manufacturing method thereof are provided to improve the productivity of a product using the LED by installing the LED on a board to a chip on board type. CONSTITUTION: One side of a board layer(10) is processed as a convex lens shape. A first semiconductor layer(22), a light-emitting layer(24), a second semiconductor layer(26), and an LED layer(20) are successively laminated. A second semiconductor electrode layer(36) is laminated and formed in a side which is touched with the second semiconductor layer. A first semiconductor electrode layer(34) is insulated with the light-emitting layer and the second semiconductor layer. The first semiconductor electrode layer passes through the center part of the LED layer in order to be electrically connected with the first semiconductor layer.
Abstract translation: 目的：提供LED及其制造方法，以通过将板安装在板上的芯片上来提高使用LED的产品的生产率。 构成：将板层（10）的一面作为凸透镜形状进行处理。 依次层叠第一半导体层（22），发光层（24），第二半导体层（26）和LED层（20）。 第二半导体电极层（36）层叠并形成在与第二半导体层接触的一侧。 第一半导体电极层（34）与发光层和第二半导体层绝缘。 第一半导体电极层穿过LED层的中心部分以与第一半导体层电连接。
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公开(公告)号：KR20210028385A
公开(公告)日：2021-03-12
申请号：KR20190109381
申请日：2019-09-04
Applicant: 한국광기술원
Abstract: 라운드형발광소자를개시한다. 본발명은 n형반도체층, 활성층, p형반도체층으로구성된에피구조체를포함하고, 상기에피구조체는적어도하나의모서리가일정크기의반지름을갖도록둥글게제거된것을특징으로한다.
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公开(公告)号：KR1020160081378A
公开(公告)日：2016-07-08
申请号：KR1020140195135
申请日：2014-12-31
Applicant: 한국광기술원
IPC: H01L33/14
CPC classification number: H01L33/14
Abstract: 질화물반도체발광소자가개시된다. 본발명의 p형질화물반도체층은, n형질화물반도체층에서활성층이배치되지않은영역과, 활성층의상부에배치되어, 활성층의인-페이즈의평형면과수직면에접합하여동시에홀을활성층에주입한다.
Abstract translation: 公开了一种氮化物半导体发光器件。 本发明的p型氮化物半导体层配置在n型氮化物半导体层中没有配置有源层的区域和有源层的上部。 p型氮化物半导体层与有源层的同相的垂直面和水平面接触。 同时，孔被注入有源层。 因此，由于空穴的迁移率和电子的迁移率之间的差异可以降低效率下降。 此外，可以提高孔的注入效率。
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公开(公告)号：KR1020150058603A
公开(公告)日：2015-05-29
申请号：KR1020130139954
申请日：2013-11-18
Applicant: 한국광기술원
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L2933/0083
Abstract: 본발명은발광다이오드제조방법및 이를통해제조된발광다이오드에관한것으로서, 사파이어기판상에제2형반도체층, 활성층, 제1형반도체층을순차적으로형성시키는단계, 상기제1형반도체층상에제1형전극을형성하고, 상기제1형전극상에지지기판을형성하는단계, 상기사파이어기판을제거하고, 상기노출된제2형반도체층상에제1 요철구조를형성하는단계및 상기제1 요철구조상에제2 요철구조를형성하고, 상기제2 요철구조상에제2형전극을형성하는단계를포함하는제조방법을제공함으로써, 반도체층의상부면에규칙적인요철부와불규칙한요철부를통해전위(dislocation) 감소로인한내부양자효율의증가및 광추출효율이개선된다는효과가얻어진다. 또한, 간단한공정으로표면에요철부를생성하여양산성이우수한다이오드제조방법및 상기제조방법을채택하여간단한공정으로양산성이우수한발광다이오드를제공한다는효과가얻어진다.
Abstract translation: 本发明涉及通过该方法制造的发光二极管和发光二极管的制造方法。 该方法包括在蓝宝石衬底上依次形成第二类型半导体层，激活层和第一类型半导体层的步骤; 在所述第一型半导体层上形成第一型电极，在所述第一型电极上形成支撑基板的工序; 去除蓝宝石衬底并在暴露的第二类型半导体层上形成第一不均匀结构的步骤; 以及在所述第一凹凸结构上形成第二凹凸结构的步骤，以及在所述第二凹凸结构上形成第二类型电极。 因此，通过规则的不均匀部分和半导体层的上表面上的不规则的凹凸部分降低位错，提高了光提取的效率，并提高了内量子效率。 此外，提供了一种以简单的工艺在表面上产生不均匀部分的生产率优异的制造方法，以及通过选择制造方法具有优异的生产率的发光二极管。
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Patent Agency Ranking
公开(公告)号：KR101471893B1
公开(公告)日：2014-12-12
申请号：KR1020130098616
申请日：2013-08-20
Applicant: 한국광기술원
CPC classification number: H01L33/40 , H01L33/32 , H01L33/38 , H01L2933/0016
Abstract: 본 발명의 일 실시예는 제1 질화물계 반도체층, 제2 질화물계 반도체층 및 상기 제1 질화물계 반도체층과 제2 질화물계 반도체층 사이에 배치되는 활성층을 포함하는 구조물을 형성하는 단계 및 상기 구조물 상에 금속 입자를 함유하는 그래핀 전극층을 형성하는 단계를 포함하고, 상기 그래핀 전극층을 형성하는 단계는 상기 구조물 상에 그래핀 박막을 형성하는 단계, 상기 그래핀 박막의 표면에 상기 금속을 함유하는 도금층을 형성하는 단계를 구비하는 발광 다이오드 제조 방법을 개시한다.
Abstract translation: 本发明的实施例涉及一种发光二极管，其包括用于形成包括第一氮化物半导体层，第二氮化物半导体层和有源层的结构的工艺，所述第一氮化物半导体层和第二氮化物半导体层和有源层被布置在第一氮化物半导体层和第二氮化物 半导体层; 在所述结构上形成包含金属颗粒的石墨烯电极的工艺; 在该结构上形成石墨烯薄膜的工艺; 以及在石墨烯薄膜的表面上形成包含金属的镀层的工艺。
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公开(公告)号：KR101436385B1
公开(公告)日：2014-09-01
申请号：KR1020130031468
申请日：2013-03-25
Applicant: 한국광기술원
Abstract: The present invention relates to a III-nitride semiconductor light emitting device. The present invention includes a substrate; a buffer layer formed on the substrate; a first nitride semiconductor layer which is formed on the buffer layer and is doped to have a first conductivity; and a defect reduction layer which is formed between the buffer layer and the first nitride semiconductor layer, blocks the progress of crystal defects or reduces the propagation of the crystal defects which are propagated to the first nitride semiconductor by changing the propagation direction of the crystal defects. According to the present invention, the propagation of crystal defects is reduced, thereby greatly improving an optical property (for examples: IV) and an electrical property (for examples: Vr, Ir).
Abstract translation: 本发明涉及III族氮化物半导体发光器件。 本发明包括基板; 形成在所述基板上的缓冲层; 第一氮化物半导体层，其形成在所述缓冲层上并被掺杂以具有第一导电性; 以及形成在缓冲层和第一氮化物半导体层之间的缺陷减少层，通过改变晶体缺陷的传播方向来阻止晶体缺陷的进行或减少传播到第一氮化物半导体的晶体缺陷的传播 。 根据本发明，晶体缺陷的传播减少，从而大大提高光学性能（例如：IV）和电性能（例如：Vr，Ir）。
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公开(公告)号：KR101173251B1
公开(公告)日：2012-08-10
申请号：KR1020110065369
申请日：2011-07-01
Applicant: 한국광기술원
CPC classification number: H01L33/505 , H01L33/52
Abstract: PURPOSE: A manufacturing method of a white led element using a preformed phosphor sheet is provided to reduce package processing time by omitting resin hardening time which needs the most of processing time. CONSTITUTION: A first molding structure and a second molding structure are provided. A silicon resin molding(130) is manufactured by inserting a silicon resin between a first molding structure and a second molding structure. The first molding structure and the second molding structure are separated from the silicon resin molding. A film(140) is arranged on a side on which uneven portion of the silicon resin molding is formed. A single color LED device(150) is arranged on one side of the silicon resin molding.
Abstract translation: 目的：提供使用预成型荧光体片的白色LED元件的制造方法，以通过省略需要最多处理时间的树脂硬化时间来减少封装处理时间。 构成：提供第一模制结构和第二模制结构。 通过在第一模制结构和第二模制结构之间插入硅树脂来制造硅树脂模制件（130）。 第一模制结构和第二模制结构与硅树脂模制件分离。 在形成硅树脂模制品的不均匀部分的一侧上布置有薄膜（140）。 单色LED装置（150）布置在硅树脂模塑件的一侧上。
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公开(公告)号：KR1020110027274A
公开(公告)日：2011-03-16
申请号：KR1020090085287
申请日：2009-09-10
Applicant: 한국광기술원
CPC classification number: Y02E10/50
Abstract: PURPOSE: A light emitting device combined with a solar cell, a manufacturing method thereof, and an operating method thereof are provided to operate a light emitting unit through a current generated from a photoactive layer by including the photoactive layer and the light emitting unit in a single device. CONSTITUTION: A second conductive LED semiconductor layer(16) is positioned on a first conductive LED semiconductor layer(12). A first electrode(22) is positioned on the second conductive LED semiconductor layer. A photoactive layer(30) is positioned on the first electrode layer. A second electrode(24) is positioned on the photoactive layer. A third electrode(26) is electrically connected to the first conductive LED semiconductor layer.
Abstract translation: 目的：提供一种与太阳能电池组合的发光装置及其制造方法及其操作方法，其通过将光活性层和发光单元包括在光电层中而由光活性层产生的电流来操作发光单元 单一设备。 构成：第二导电LED半导体层（16）位于第一导电LED半导体层（12）上。 第一电极（22）位于第二导电LED半导体层上。 光敏层（30）位于第一电极层上。 第二电极（24）位于光敏层上。 第三电极（26）电连接到第一导电LED半导体层。
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