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公开(公告)号：KR100443288B1
公开(公告)日：2004-08-09
申请号：KR1020020003529
申请日：2002-01-22
Applicant: 한국전자통신연구원
IPC: G02B26/00
CPC classification number: H01S3/06791 , H01S3/106 , H01S3/107 , H01S3/108
Abstract: The present invention relates to an optical oscillator with milimeterwave frequency. The optical oscillator comprises a non-linear circuit including a wavelength coupler for receiving a pump light, an optical amplification optical fiber for amplifying the light from the wavelength coupler, a dispersion-compensating optical fiber for obtaining a non-linear polarizing effect of the light transmitted via the optical amplification optical fiber, a line polarizer for varying the wavelength of the light having a non-linear polarizing effect by means of the dispersion-compensating optical fiber, and a polarizing controller for controlling the modulating frequency of the light transmitted via the line polarizer; an output circuit having an optical direction indicator for precluding the path of the light, a 10% optical fiber coupler for output light, and a dispersion-compensating optical fiber for determining the wavelength region; and an optical coupler for connecting the, non-linear circuit and the output circuit. Therefore, two laser modes are simultaneously oscillated so that ultra-high frequencies (60, 120 and 160 GHz) are modulated due to Magnolia phenomenon between the two laser modes.
Abstract translation: 本发明涉及一种具有毫米波频率的光学振荡器。 该光学振荡器包括：非线性电路，其包括用于接收泵浦光的波长耦合器，用于放大来自波长耦合器的光的光学放大光纤，用于获得光的非线性偏振效应的色散补偿光纤 通过光学放大光纤传输的线偏振器，用于通过色散补偿光纤改变具有非线性偏振效应的光的波长的偏振器，以及用于控制经由光学放大光纤传输的光的调制频率的偏振控制器， 线偏振器; 输出电路，其具有用于排除光路的光学方向指示器，用于输出光的10％光纤耦合器以及用于确定波长区域的色散补偿光纤; 以及用于连接非线性电路和输出电路的光耦合器。 因此，两种激光模式同时振荡，以便在两种激光模式之间由于木兰现象而调制超高频率（60,120和160GHz）。
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公开(公告)号：KR100433623B1
公开(公告)日：2004-05-31
申请号：KR1020010057176
申请日：2001-09-17
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003
Abstract: A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
Abstract translation: 开关场效应晶体管包括衬底; 在衬底上形成的Mott-Brinkman-Rice绝缘体，Mott-Brinkman-Rice绝缘体在其中加入孔时发生突然的金属 - 绝缘体转变; 在Mott-Brinkman-Rice绝缘体上形成的介电层，当施加预定电压时，介电层向Mott-Brinkman-Rice绝缘体中添加孔; 形成在介电层上的栅电极，栅电极将预定电压施加到介电层; 形成为电连接到莫特 - 布林克曼 - 米绝缘体的第一部分的源电极; 以及形成为电连接到莫特 - 布林克曼 - 米绝缘体的第二部分的漏电极。
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公开(公告)号：KR1020030024156A
公开(公告)日：2003-03-26
申请号：KR1020010057176
申请日：2001-09-17
Applicant: 한국전자통신연구원
IPC: H01L29/772
CPC classification number: H01L49/003
Abstract: PURPOSE: A field effect transistor is provided to manifest metallic characteristic even though low density of hole is added by using sharp metal- insulator transition. CONSTITUTION: A LaTiO3(LTO) Mott transistor(410) is placed on a SrTiO3(STO) substrate(400). A Ba1-xSrxTiO3(BSTO) ferroelectric layer(420) is formed on a portion of the LTO Mott insulator. A gate electrode(430) is formed on the BSTO ferroelectric layer to apply a voltage. As a voltage is applied to the BSTO ferroelectric layer, holes are poured into the LTO Mott transistor so that abrupt metal-insulator transition occurs in it to form a conducting channel(415). A source and drain electrode(440,450) are formed on the first and second surface of the LTO Mott transistor respectively.
Abstract translation: 目的：提供场效应晶体管以表现出金属特性，即使通过使用尖锐的金属 - 绝缘体转变来增加孔的低密度。 构成：将LaTiO 3（LTO）莫特晶体管（410）放置在SrTiO 3（STO）衬底（400）上。 在LTO Mott绝缘体的一部分上形成Ba1-xSrxTiO3（BSTO）铁电层（420）。 在BSTO铁电层上形成栅电极（430）以施加电压。 当施加到BSTO铁电层上的电压时，将空穴注入到LTO Mott晶体管中，从而在其中发生突然的金属 - 绝缘体转变以形成导电沟道（415）。 源极和漏极（440,450）分别形成在LTO Mott晶体管的第一和第二表面上。
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公开(公告)号：KR100377476B1
公开(公告)日：2003-03-26
申请号：KR1019990024699
申请日：1999-06-28
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: PURPOSE: A laser molecular beam epitaxy(MBE) apparatus is provided in which an ion beam generator is set to easily control supply of active oxygen when a metal oxide is fabricated and an ion beam formed from various gases is irradiated on the surface of the metal oxide to change composition and structure thereof. CONSTITUTION: A laser MBE apparatus has a pressure gauge(12) and an external vacuum pump(11) and vaporizes a metal oxide target(1) with a high-power pulse laser beam at a low pressure to deposit a metal oxide on a substrate(2) heated by a heater(3). The laser MBE apparatus includes a gas flow rate adjustment controller(6) for receiving an electrical signal from the pressure gauge to control gas flow rates, a gas flow rate controller(7) for supplying gases such that the laser MBE apparatus has a desired inner vacuum degree when the metal oxide is deposited, an ion beam generation controller(5) attached to the outside of the MBE apparatus to control the speed of an ion beam, and an ion beam generator(4) set inside the MBE apparatus to ionize the gases inserted from the gas flow rate controller, generating the ion beam.
Abstract translation: 目的：提供一种激光分子束外延（MBE）装置，其中设置离子束发生器以便在制造金属氧化物时容易地控制活性氧的供应，并且由各种气体形成的离子束照射在金属表面上 氧化物以改变其组成和结构。 本发明的激光MBE设备具有压力计（12）和外部真空泵（11），并用高功率脉冲激光束在低压下蒸发金属氧化物靶（1）以在基底上沉积金属氧化物 （2）由加热器（3）加热。 激光MBE设备包括：用于接收来自压力计的电信号以控制气体流量的气体流量调节控制器（6）;用于供应气体的气体流量控制器（7），使得激光MBE设备具有期望的内部 在沉积金属氧化物时的真空度，安装在MBE设备外部以控制离子束速度的离子束产生控制器（5），以及设置在MBE设备内部的离子束发生器（4） 从气体流量控制器插入气体，产生离子束。
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公开(公告)号：KR1020020022162A
公开(公告)日：2002-03-27
申请号：KR1020000054801
申请日：2000-09-19
Applicant: 한국전자통신연구원
IPC: H01S3/136
Abstract: PURPOSE: A super high frequency modulation laser beam generator having a double annular resonator structure is provided to widen a range of modulation frequency of laser ray source by changing a polarization and a wavelength of specific modes of laser ray. CONSTITUTION: A first annular optic fiber laser(50) resonator has a length different from a second annular optic fiber laser resonator(60). An optic fiber coupler(70) couples the first annular optic fiber laser resonator with the second annular optic fiber laser resonator to oscillate double laser modes, so that a beat phenomenon between double laser modes is induced. Each of the first and second annular optic fiber laser resonators has a polarization regulator for modulating a frequency of output rays. The first annular optic fiber laser resonator comprises an optic fiber(51) for amplifying rays, a dispersal compensating fiber(52) for a non-linear polarization effect, an optic direction regulator(53) and a polarization regulator(54). The second annular optic fiber laser resonator comprises a dispersal compensating fiber(62) and a polarization regulator(61).
Abstract translation: 目的：提供一种具有双环形谐振器结构的超高频调制激光束发生器，通过改变激光的特定模式的偏振和波长来扩大激光光源的调制频率范围。 构成：第一环形光纤激光器（50）谐振器具有与第二环形光纤激光谐振器（60）不同的长度。 光纤耦合器（70）将第一环形光纤激光谐振器与第二环形光纤激光谐振器耦合以振荡双激光模式，从而引起双激光模式之间的跳动现象。 第一和第二环形光纤激光谐振器中的每一个具有用于调制输出光线的频率的偏振调节器。 第一环形光纤激光谐振器包括用于放大光线的光纤（51），用于非线性偏振效应的分散补偿光纤（52），光学方向调节器（53）和偏振调节器（54）。 第二环形光纤激光谐振器包括分散补偿光纤（62）和偏振调节器（61）。
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Patent Agency Ranking
公开(公告)号：KR100301110B1
公开(公告)日：2001-09-06
申请号：KR1019980050207
申请日：1998-11-23
Applicant: 한국전자통신연구원
IPC: H01L39/24
Abstract: 본 발명은 스퍼터링 증착 장비에 관한 것으로, 증착실 분리대에 의해 증착영역과 가열영역으로 분리된 박막 증착실과, 증착실 분리대의 중앙부를 관통하도록 설치되며, 증착 분리대를 중심으로 기판을 회전시키기 위한 기판지지대와, 증착영역의 상하부에 각각 설치된 소결체 타겟과, 가열영역의 상하부에 각각 설치된 기판 가열기를 포함하여 이루어지며, 소결체 타겟과 기판간에 인가되는 고주파전력에 의해 발생된 플라즈마에 의해 회전하는 지름이 2 내지 3인치 크기의 MgO, SrTiO
3 , LaAlO
3 , Al
2 O
3 , LaSrGaO
4 대면적 산화물 단결정 기판의 양쪽면에 타겟물질이 증착되도록 구성된다.-
公开(公告)号：KR1020010067425A
公开(公告)日：2001-07-12
申请号：KR1020000078269
申请日：2000-12-19
Applicant: 한국전자통신연구원
IPC: H01L39/22
Abstract: PURPOSE: A sloped edge Josephson junction device and a method for manufacturing the same are provided to form easily a high temperature superconductive sloped edge junction by using a high superconductor thin film of a cooper oxide. CONSTITUTION: The first electrode layer(12) having a sloped edge and the first insulating layer(13) with a sloped edge are formed sequentially on a substrate(11). A modification layer(16) is formed on the sloped edge of the first electrode layer(12). The second electrode layer(17) and the second insulating layer(18) are formed on the first electrode layer(12) including the modification layer(16) and the first insulating layer(13), respectively. The first and the second electrode layers(12,13) are formed with a copper oxide superconductor.
Abstract translation: 目的：提供倾斜边缘约瑟夫逊结装置及其制造方法，以通过使用协同氧化物的高超导体薄膜容易地形成高温超导倾斜边缘结。 构成：具有倾斜边缘的第一电极层（12）和具有倾斜边缘的第一绝缘层（13）依次形成在基板（11）上。 在第一电极层（12）的倾斜边缘上形成改性层（16）。 第二电极层（17）和第二绝缘层（18）分别形成在包括改性层（16）和第一绝缘层（13）的第一电极层（12）上。 第一和第二电极层（12,13）形成有氧化铜超导体。
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公开(公告)号：KR1019970011141B1
公开(公告)日：1997-07-07
申请号：KR1019930024334
申请日：1993-11-16
Applicant: 한국전자통신연구원
Abstract: In the method for eliminating a silver adhesive for a process of a hot superconductive thin film in removing the silver adhesive from a semiconductor element which is fixed onto a substrate holder by the silver adhesive(3) and which has an oxide single crystal substrate(1) and a hot superconductive thin film(2), the method comprises the steps of evaporating in vacuum a protective film(4) thicker than a hot superconductive thin film, on the hot superconductive thin film(3); coating HCL by using a cotton swab on the silver adhesive(3), etching the silver adhesive(3) by using a cotton swab stained with KCN solution(6) and evaporating in vacuum a metal thin film(5) on a back face of the oxide single crystal substrate(1); and removing the protective film(4) formed on the hot superconductive thin film(3) by utilizing an ultrasonic washer.
Abstract translation: 在从通过银粘合剂（3）固定在基板保持件上并具有氧化物单晶基板（1）的半导体元件去除银粘合剂的方法中，除去用于热超导薄膜的工艺的银粘合剂的方法 ）和热超导薄膜（2），该方法包括在热超导薄膜（3）上真空蒸发比热超导薄膜厚的保护膜（4）的步骤; 通过在银粘合剂（3）上使用棉签涂覆HCL，通过使用用KCN溶液（6）染色的棉签蚀刻银粘合剂（3），并在真空中蒸发金属薄膜（5），背面 氧化物单晶基板（1）; 以及利用超声波清洗机除去形成在热超导薄膜（3）上的保护膜（4）。
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公开(公告)号：KR1019970004300A
公开(公告)日：1997-01-29
申请号：KR1019950017176
申请日：1995-06-23
Applicant: 한국전자통신연구원
IPC: H03H7/00
Abstract: 본 발명은 마이크로 스트립 평행결합선 방식의 고온초전도 6-극 대역통과 필터에 관한 것으로서, 마이크로파 특성이 우수한 단결정 기관과, 상기 단결정기판 상부의 일측에 형성된 신호 전송용 입력단과, 상기 단결정기판 상부의 상기 신호 전송용 입력단의 타측에 형성된 출력단과, 상기 단결정기판 상부에 입력단과 출력단과 연결되도록 형성된 ㄱ자형의 정합망과, 상기 다결정기판 상부의 정합망 사이에 갯수에 의해 극수를 결정하는 6개의 마이크로 스트립이 평행결합선 방식으로 형성된 필터 패턴과, 상기 다결정기판 하부에 형성된 접지판을 포함한다. 따라서, 손실 특성을 저하시키지 않으면서 스커트 특성을 향상시킬 수 있다.
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