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公开(公告)号：KR100463416B1
公开(公告)日：2004-12-23
申请号：KR1020020053450
申请日：2002-09-05
Applicant: 한국전자통신연구원
IPC: H01L31/10
CPC classification number: H01L31/1105 , H01L31/02327 , H01L31/0352 , H01L31/035218 , H01L31/101
Abstract: 고성능 광검출기로 사용될 수 있는 아발란치 포토트랜지스터(avalanche phototransistor)를 개시한다. 본 발명에서 제안하는 아발란치 포토트랜지스터는, 적외선 검출 기능의 에미터 광흡수층에, 전하층과 5000 Å 이하 두께의 증배층으로 이루어진 얇은 아발란치 이득 구조층(avalanche-gain layered-structure) 및 핫-일렉트론 전이층을 포함하고, 에미터, 베이스 및 콜렉터의 3 단자 구조를 적용한 것이다. 본 발명에 따르면, 아발란치 포토다이오드에서보다 낮은 전압을 인가하여도 높은 이득을 성취하고 감도를 증가시킬 수 있다. 핫 일렉트론 효과를 이용한 고전류, 고출력 및, 고속 특성을 성취할 수 있으며, 소자의 안정성과 신뢰성이 증가하고, 단자 수의 증가에 의한 다기능성, 신기능성이 부여될 수 있다.
Abstract translation: 公开了能够用作高性能的光电检测器的雪崩光电晶体管。 雪崩光电晶体管包括具有检测红外光的功能的发射光吸收层，包括电荷层的薄雪崩增益分层结构和厚度为5000以下的倍增层和热电子跃迁层。 雪崩光电晶体管采用由发射极，基极和集电极构成的三端结构。 即使将比雪崩光电二极管低的电压施加到雪崩光电晶体管，也可以获得高增益，并且可以提高光电晶体管的灵敏度。 使用热电子效应可以实现高电流，高输出和高运行速度。 此外，可以增加元件的稳定性和依赖性，并且由于端子数量的增加可以获得多种操作功能。
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公开(公告)号：KR101857160B1
公开(公告)日：2018-05-15
申请号：KR1020110136674
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01S5/10
CPC classification number: H01S5/021 , H01S3/0637 , H01S5/0205 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/125 , H01S5/2272 , H01S5/3027
Abstract: 본발명은반도체레이저제조방법을제공한다. 상기방법은선택된영역내에만레이저발진을위한게르마늄단결정막을선택적에피성장방법으로형성되도록하여, 패브리페로양단의표면거칠기를최소화하도록하고, 반도체레이저제작공정에서절단및 연마공정필요없도록한다.
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公开(公告)号：KR1020170115224A
公开(公告)日：2017-10-17
申请号：KR1020160042487
申请日：2016-04-06
Applicant: 한국전자통신연구원
CPC classification number: H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
Abstract: 본발명의실시예에따른레이저장치를제공한다. 레이저장치는반도체기판, 상기반도체기판상의게르마늄단결정층및 상기게르마늄단결정층상에배치되고, 상기게르마늄단결정층을향해광을조사하는펌핑광원을포함하고, 상기게르마늄단결정층은상기광을수광하여레이저를출력한다.
Abstract translation: 提供了根据本发明实施例的激光装置。 激光装置是包括一个泵浦光源，用于照射的光被设置在锗单晶层和半导体基板上的锗单晶层上的激光，向着锗单晶层的半导体衬底，锗单晶层接收光 输出。
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公开(公告)号：KR1020160107398A
公开(公告)日：2016-09-19
申请号：KR1020150029812
申请日：2015-03-03
Applicant: 한국전자통신연구원
IPC: H01L21/762 , H01L21/02 , H01L21/316
CPC classification number: H01L29/161 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/7624
Abstract: 본발명은게르마늄온 인슐레이터기판을제공한다. 게르마늄온 인슐레이터기판은벌크실리콘기판, 상기벌크실리콘기판상에배치되고, 상기벌크실리콘기판의일부를노출하는제 1 영역을가지는산화막, 상기산화막의상면의일부를덮으며, 상기제 1 영역을덮지않는실리콘층, 상기제 1 영역을통해노출된상기벌크실리콘기판과접촉하고, 상기산화막상에배치되는게르마늄층및 상기산화막및 상기실리콘층을덮고상기게르마늄층의상면을노출시키는절연층을포함한다.
Abstract translation: 本发明提供一种绝缘体上的锗基板。 绝缘体上的衬底包括：体硅衬底; 设置在所述体硅衬底上的氧化膜，并且具有暴露所述体硅衬底的一部分的第一区域; 覆盖所述氧化物膜的上侧的一部分而不覆盖所述第一区域的一部分的硅层; 与所述体硅衬底接触以暴露于所述第一区域并设置在所述氧化物膜上的锗层; 以及覆盖氧化膜和硅层的绝缘层，并暴露锗层的上侧。
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公开(公告)号：KR1020160087960A
公开(公告)日：2016-07-25
申请号：KR1020150006866
申请日：2015-01-14
Applicant: 한국전자통신연구원
CPC classification number: G02F1/025 , G02F2001/0155 , G02F2001/0157 , G02B6/036 , G02B6/13
Abstract: 본발명은기존의광도파로및 광변조기에사용되던 SOI (silicon-on-insulator) 웨이퍼를대신하여, 벌크실리콘웨이퍼를사용하여 CMOS (complementary metal oxide semiconductor) 공정및 열산화막(thermal oxide) 형성공정을이용함으로써실리콘산화물을클래딩으로하고실리콘을코어로하는광도파로및 광도파로상에집적되는광변조부를포함하는광변조기를제공하고그 제조방법을제시한다.
Abstract translation: 本发明提供了一种电吸收光调制器，其包括硅波导包覆硅和使用硅作为核心，以及光学调制单元，其通过使用互补金属氧化物半导体（CMOS）工艺和热 使用体硅晶片代替使用用于光波导和光调制器的绝缘体上硅（SOI）晶片的氧化物形成工艺; 及其制造方法。
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Patent Agency Ranking
公开(公告)号：KR1020130069145A
公开(公告)日：2013-06-26
申请号：KR1020110136716
申请日：2011-12-16
Applicant: 한국전자통신연구원
CPC classification number: G02B6/136 , G02B6/122 , G02B2006/12038 , G02B2006/12173 , G02B2006/12176
Abstract: PURPOSE: A method for forming an optical waveguide on a silicon wafer is provided to form an optical waveguide directly on a silicon wafer, thereby enabling manufacturing of an optical communication chip on the same wafer with a CPU or a memory chip and thus remarkably reducing manufacturing costs. CONSTITUTION: A method comprises the steps of: forming a top insulation pattern(3a) on a substrate(1); forming a protrusion part(1a) by etching the substrate; forming a side insulation pattern(5a) which covers the side of the protrusion part; forming a core pattern(1c) which is surrounded with the top, the side, and a lower insulation patterns by forming the lower insulation pattern(5a) through thermal oxidation; and removing the top and side insulation patterns.
Abstract translation: 目的：提供一种在硅晶片上形成光波导的方法，以直接在硅晶片上形成光波导，从而能够利用CPU或存储芯片在同一晶圆上制造光通信芯片，从而显着降低制造 成本。 构成：一种方法包括以下步骤：在衬底（1）上形成顶部绝缘图案（3a）; 通过蚀刻所述基板形成突出部分（1a）; 形成覆盖所述突出部的一侧的侧绝缘图案（5a） 通过热氧化形成下绝缘图案（5a），形成由顶部，侧面和下部绝缘图案包围的芯图案（1c）; 并去除顶部和侧面绝缘图案。
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公开(公告)号：KR1020130069143A
公开(公告)日：2013-06-26
申请号：KR1020110136714
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01P7/08
CPC classification number: G02B6/12007 , G02B2006/12061
Abstract: PURPOSE: A structure of a ring resonator having silicon and a silicon nitride film waveguide is provided to form a space between linear waveguides and ring waveguides and a space between the ring waveguides with over 300nm, thereby simplifying manufacturing processes using a simple lithographic process. CONSTITUTION: A ring resonator(100) includes first and second waveguides(110,120) and a channel part. The first and the second waveguides are mutually separated on a substrate. The channel part includes ring waveguides(150) aligned in a row between the first and the second waveguides. The first and the second waveguides and the ring waveguides are formed with silicon. The width of the ring waveguide is 0.7 to 1.5 micrometers, and the height of the ring waveguide is 150 to 300nm. A distance between the first and the second waveguides and the ring waveguide closest to the first and the second waveguides is 250nm to 1mm.
Abstract translation: 目的：提供具有硅和氮化硅膜波导的环形谐振器的结构，以在线性波导和环形波导之间形成空间，并且在超过300nm的环形波导之间形成空间，从而简化了使用简单光刻工艺的制造工艺。 构成：环形谐振器（100）包括第一和第二波导（110,120）和通道部分。 第一和第二波导在基板上相互分离。 通道部分包括在第一和第二波导之间成对排列的环形波导（150）。 第一和第二波导和环形波导由硅形成。 环形波导的宽度为0.7〜1.5微米，环形波导的高度为150〜300nm。 第一和第二波导与最靠近第一和第二波导的环形波导之间的距离为250nm至1mm。
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公开(公告)号：KR1020120067627A
公开(公告)日：2012-06-26
申请号：KR1020100129144
申请日：2010-12-16
Applicant: 한국전자통신연구원
CPC classification number: G02B6/1228 , G02B6/12002 , G02B6/305
Abstract: PURPOSE: A method for forming an optical coupler is provided to improve light coupling efficiency by controlling the size of an optical waveguide with a selective epitaxial growth process. CONSTITUTION: A first wave guide(132) and a plane taper layer are formed on a silicon layer. A first opening unit of a constant line width exposes the silicon layer at one side of the plane taper layer corresponding to the first wave guide. The line width of a second opening unit is diminished. A mask comprises the first opening unit and the second opening unit. The mask additionally comprises a third opening unit which is extended from one side of the second opening unit. The third opening unit has a constant line width. A planar wave guide(136) and a 3D taper layer(138) are formed at the same time.
Abstract translation: 目的：提供一种用于形成光耦合器的方法，通过利用选择性外延生长工艺控制光波导的尺寸来提高光耦合效率。 构成：在硅层上形成第一波导（132）和平面锥形层。 恒定线宽度的第一开口单元在对应于第一波导的平面锥形层的一侧暴露硅层。 第二开口单元的线宽减小。 面罩包括第一开口单元和第二开口单元。 掩模还包括从第二开口单元的一侧延伸的第三开口单元。 第三打开单元具有恒定的线宽。 同时形成平面波导（136）和3D锥形层（138）。
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公开(公告)号：KR101153369B1
公开(公告)日：2012-06-08
申请号：KR1020080125871
申请日：2008-12-11
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
Abstract: 본발명은광학장치를제공한다. 이장치는기판, 기판상에배치된제1 클래딩, 제1 클래딩상에제1 방향으로연장되는제1 유전율을가지는제1 광도파로, 제1 광도파로의적어도일측에형성된측면격자, 제1 클래상에상기측면격자의공간을채우고제1 방향을가로지르는제2 방향으로연장되는제2 유전율을가지는제2 광도파로, 및제2 광도파로상에배치된제3 유전율을가진제2 클래딩을포함하되, 제1 유전율은제2 유전율보다크고, 제2유전율은제3 유전율보다크다.
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公开(公告)号：KR1020110064461A
公开(公告)日：2011-06-15
申请号：KR1020090121080
申请日：2009-12-08
Applicant: 한국전자통신연구원
CPC classification number: G02B6/43 , G02B6/262 , G02B6/4292
Abstract: PURPOSE: A silicon photonic chip is provided to increase the efficiency, the durability, and the stability of optical connection between light emitting elements. CONSTITUTION: A silicon photonic chip(100) processes incident light from a light emitting element(200) using a plurality of photoelectric elements. The photoelectric elements include a light connecting unit(INPUT), a modulating unit(MOD), a multiplexing unit(MUX), a demultiplexing unit(DEMUX), and a light receiving unit(PD). The optical connection between the photoelectric elements is formed by an optical waveguide formed on the silicon photonic chip.
Abstract translation: 目的：提供硅光子芯片以提高发光元件之间光连接的效率，耐久性和稳定性。 构成：硅光子芯片（100）使用多个光电元件处理来自发光元件（200）的入射光。 光电元件包括光连接单元（INPUT），调制单元（MOD），复用单元（MUX），解复用单元（DEMUX）和光接收单元（PD）。 光电元件之间的光学连接由形成在硅光子芯片上的光波导形成。
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