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公开(公告)号：KR101313232B1
公开(公告)日：2013-09-30
申请号：KR1020090121079
申请日：2009-12-08
Applicant: 한국전자통신연구원
CPC classification number: G02B6/13
Abstract: 도파로 절단면 형성 방법 및 이를 채용하는 포토닉스 소자가 제공된다. 이 방법은 기판 상에 도파로들을 포함하는 적어도 하나의 광소자 다이를 형성하고, 기판의 하부면에 적어도 하나의 트렌치를 형성한 후, 기판을 쪼갬으로써 트렌치의 상부에서 도파로들의 절단면들을 형성하는 단계를 포함한다. 이때, 트렌치는 도파로들의 아래에서 도파로들을 가로지르는 방향으로 형성된다.
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公开(公告)号：KR1020090039339A
公开(公告)日：2009-04-22
申请号：KR1020070104920
申请日：2007-10-18
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12007
Abstract: A multi-channel ring-resonator is provided to realize uniform resonant frequency by controlling resonance frequency minutely without affecting the other process. A multi-channel ring-resonator is composed of an input waveguide(120) and a ring resonators(111-114). An output waveguide(131-134) is arranged in the ring resonator each surrounding. One or more modulation clad pattern(152-154) covering the surface a part of the corresponding ring resonator while being adjacent to one of ring resonators at least.
Abstract translation: 提供多通道环形谐振器以通过微调控制谐振频率来实现均匀的谐振频率，而不影响其他过程。 多通道环形谐振器由输入波导（120）和环形谐振器（111-114）组成。 输出波导（131-134）布置在每个环绕的环形谐振器中。 一个或多个调制包层图案（152-154）至少覆盖相对应的一个环形谐振器的表面一部分对应的环形谐振器。
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公开(公告)号：KR1020110064460A
公开(公告)日：2011-06-15
申请号：KR1020090121079
申请日：2009-12-08
Applicant: 한국전자통신연구원
CPC classification number: G02B6/13
Abstract: PURPOSE: A method for forming waveguide facet and a photonic device embodying the same are provided to divide a substrate in a predetermined place in which photonic elements are partially sawn. CONSTITUTION: Light device dies are formed on a substrate(S1). One or more reference fiducial mark is formed in the predetermined area of the substrate(S2). First partially sawing areas are formed by the partially sawing process under the substrate(S3). Second partially sawing areas are formed by the partially sawing process on the substrate(S4). Full sawing lines are formed by performing the full sawing under the lower surface of the substrate(S5). Fragment substrates are divided into a plurality of fragment dies through a cleaving process(S6).
Abstract translation: 目的：提供一种用于形成波导面的方法和具有该方法的光子器件，以将基板划分在光子元件部分锯切的预定位置。 构成：在基板上形成光器件管芯（S1）。 在基板的预定区域中形成一个或多个参考基准标记（S2）。 第一部分锯切区域通过在基底下的部分锯切工艺形成（S3）。 通过在基板上的部分锯切工艺形成第二部分锯切区域（S4）。 通过在基板的下表面下进行完全锯切来形成全切割线（S5）。 片段底物通过裂解过程分成多个片段模片（S6）。
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Patent Agency Ranking
公开(公告)号：KR1020110027549A
公开(公告)日：2011-03-16
申请号：KR1020100066675
申请日：2010-07-12
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An electro-optic modulating device is provided to form vertical PN junctions or vertical PIN junctions in an optical waveguide, thereby increasing a change of an effective refractive index during a device operation. CONSTITUTION: A semiconductor film(30) configuring an optical waveguide(WG) is arranged on a substrate(10). The optical waveguide comprises the first slab part(SP1), the second slab part(SP2), and a lip part(RP). The lip part includes a thickness thicker than the first and second slab parts. The first and second doping areas(D1,D2) are formed on the first and second slab parts respectively. A vertical doping area(50) configuring a vertical structure is formed in the lip part.
Abstract translation: 目的：提供电光调制装置以在光波导中形成垂直PN结或垂直PIN结，从而在器件操作期间增加有效折射率的变化。 构成：构成光波导（WG）的半导体膜（30）配置在基板（10）上。 光波导包括第一板坯部（SP1），第二板坯部（SP2）和唇部（RP）。 唇部包括比第一和第二板坯部分厚的厚度。 第一和第二掺杂区域（D1，D2）分别形成在第一和第二平板部件上。 在唇部形成垂直结构的垂直掺杂区域（50）。
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公开(公告)号：KR1020100127376A
公开(公告)日：2010-12-06
申请号：KR1020090045797
申请日：2009-05-26
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12007
Abstract: PURPOSE: An optical devices and fabricating method thereof are provided to improve the reliability of an optical device. CONSTITUTION: A cladding layer(141) includes a top cladding layer and a bottom cladding layer. A core(121) includes a plurality of rings between the top and bottom cladding layer. An insertion layer(125) is interposed between the core and the cladding layer and has a refractive index higher which is between the refractive index of the core and the cladding layer.
Abstract translation: 目的：提供一种光学器件及其制造方法，以提高光学器件的可靠性。 构成：包层（141）包括顶部包覆层和底部包层。 芯（121）包括在顶部和底部包层之间的多个环。 插入层（125）插入在芯和包层之间，并且折射率高于芯和折射层的折射率之间。
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公开(公告)号：KR100907251B1
公开(公告)日：2009-07-10
申请号：KR1020070104920
申请日：2007-10-18
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12007
Abstract: 다채널 링 공진기 기반 파장분할다중화 광학 소자를 제공한다. 이 소자는 입력 도파관, 입력 도파관 주위에 배치된 복수개의 링 공진기들, 링 공진기들 각각의 주위에 배치된 출력 도파관들 및 링 공진기들 중의 적어도 하나에 인접하게 형성되어 해당 링 공진기의 표면 일부를 덮는 적어도 하나의 변조 클래드 패턴을 구비한다.
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公开(公告)号：KR1020130069143A
公开(公告)日：2013-06-26
申请号：KR1020110136714
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01P7/08
CPC classification number: G02B6/12007 , G02B2006/12061
Abstract: PURPOSE: A structure of a ring resonator having silicon and a silicon nitride film waveguide is provided to form a space between linear waveguides and ring waveguides and a space between the ring waveguides with over 300nm, thereby simplifying manufacturing processes using a simple lithographic process. CONSTITUTION: A ring resonator(100) includes first and second waveguides(110,120) and a channel part. The first and the second waveguides are mutually separated on a substrate. The channel part includes ring waveguides(150) aligned in a row between the first and the second waveguides. The first and the second waveguides and the ring waveguides are formed with silicon. The width of the ring waveguide is 0.7 to 1.5 micrometers, and the height of the ring waveguide is 150 to 300nm. A distance between the first and the second waveguides and the ring waveguide closest to the first and the second waveguides is 250nm to 1mm.
Abstract translation: 目的：提供具有硅和氮化硅膜波导的环形谐振器的结构，以在线性波导和环形波导之间形成空间，并且在超过300nm的环形波导之间形成空间，从而简化了使用简单光刻工艺的制造工艺。 构成：环形谐振器（100）包括第一和第二波导（110,120）和通道部分。 第一和第二波导在基板上相互分离。 通道部分包括在第一和第二波导之间成对排列的环形波导（150）。 第一和第二波导和环形波导由硅形成。 环形波导的宽度为0.7〜1.5微米，环形波导的高度为150〜300nm。 第一和第二波导与最靠近第一和第二波导的环形波导之间的距离为250nm至1mm。
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公开(公告)号：KR1020100058760A
公开(公告)日：2010-06-04
申请号：KR1020080117279
申请日：2008-11-25
Applicant: 한국전자통신연구원
IPC: H01L21/308 , H01L21/027
CPC classification number: H01L21/0338 , G01B11/27 , G03F9/7069 , G03F9/7088 , H01L21/0337 , G03F9/708
Abstract: PURPOSE: A method of forming a semiconductor device unconstrained by optical limit and an apparatus for fabricating thereof are provided to minimize an aligning error with an accuracy of less than 1nm by implementing an aligning process using a laser beam. CONSTITUTION: An etching object film(110) is formed on a substrate(100). A hard mask film is formed on the etching object film. A first mask pattern(135) is formed on the hard mask film. A first spacer(138) is formed on a side wall of the first mask patterns. The hard mask pattern(127) is formed by etching the hard mask film. A second spacer is formed on the sidewall of the second mask patterns.
Abstract translation: 目的：提供一种形成不受光学极限约束的半导体器件的方法及其制造装置，通过实施使用激光束的对准处理来最小化精度低于1nm的对准误差。 构成：在基板（100）上形成蚀刻对象膜（110）。 在蚀刻对象膜上形成硬掩模膜。 第一掩模图案（135）形成在硬掩模膜上。 在第一掩模图案的侧壁上形成第一间隔物（138）。 通过蚀刻硬掩模膜形成硬掩模图案（127）。 在第二掩模图案的侧壁上形成第二间隔物。
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