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公开(公告)号：KR1020130069138A
公开(公告)日：2013-06-26
申请号：KR1020110136709
申请日：2011-12-16
Applicant: 한국전자통신연구원
CPC classification number: G02B6/122
Abstract: PURPOSE: A wavelength tuning method of an optical device is provided to increase the refractive index of a dielectric layer by thermally treating the dielectric layer and to increase the wavelength of light passing through the dielectric layer and a core pattern. CONSTITUTION: An optical device including a core pattern(5) and a dielectric layer(7) covering the core pattern is formed on a substrate(1). The refractive index of the dielectric layer is increased by thermally treating the optical device. The dielectric layer is composed of an SiON film. A bottom clad layer(3) prevents an impurity in the core pattern from being diffused. A top clad layer(9) is made through a deposition process and has an even refractive index distribution through a high temperature treatment.
Abstract translation: 目的：提供光学器件的波长调谐方法，以通过热处理电介质层和增加通过介电层和芯图案的光的波长来增加电介质层的折射率。 构成：在基板（1）上形成包括芯图案（5）和覆盖芯图案的电介质层（7）的光学装置。 通过对光学器件进行热处理来提高介电层的折射率。 电介质层由SiON膜构成。 底部包覆层（3）防止芯图案中的杂质扩散。 通过沉积工艺制成顶部覆层（9），并通过高温处理具有均匀的折射率分布。
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公开(公告)号：KR1020120065809A
公开(公告)日：2012-06-21
申请号：KR1020100127118
申请日：2010-12-13
Applicant: 한국전자통신연구원
IPC: H04B10/2581
CPC classification number: H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
Abstract: PURPOSE: An optical network structure of a multicore central processing apparatus is provided to develop a CPU chip comprising hundreds of or thousands of cores. CONSTITUTION: An optical network structure of a multicore central processing apparatus comprises: ring resonator WDM(wavelength division multiplexing) filters corresponding to a plurality cores(CR1-CR12); one or more control units(CU) for receiving optical signal transformed to a waveguide and transmistting the optical signal to the waveguide.
Abstract translation: 目的：提供多核心处理装置的光网络结构，以开发包含数百或数千个核心的CPU芯片。 构成：多芯中央处理装置的光网络结构包括：对应于多个核（CR1-CR12）的环形谐振器WDM（波分复用）滤波器; 一个或多个控制单元（CU），用于接收转换到波导的光信号，并将光信号传输到波导。
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公开(公告)号：KR1020100127376A
公开(公告)日：2010-12-06
申请号：KR1020090045797
申请日：2009-05-26
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12007
Abstract: PURPOSE: An optical devices and fabricating method thereof are provided to improve the reliability of an optical device. CONSTITUTION: A cladding layer(141) includes a top cladding layer and a bottom cladding layer. A core(121) includes a plurality of rings between the top and bottom cladding layer. An insertion layer(125) is interposed between the core and the cladding layer and has a refractive index higher which is between the refractive index of the core and the cladding layer.
Abstract translation: 目的：提供一种光学器件及其制造方法，以提高光学器件的可靠性。 构成：包层（141）包括顶部包覆层和底部包层。 芯（121）包括在顶部和底部包层之间的多个环。 插入层（125）插入在芯和包层之间，并且折射率高于芯和折射层的折射率之间。
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公开(公告)号：KR1020080052240A
公开(公告)日：2008-06-11
申请号：KR1020070058000
申请日：2007-06-13
Applicant: 한국전자통신연구원
CPC classification number: G06K9/74
Abstract: An optical vision chip and an image recognition method using the same are provided to perform an image recognition operation while not requiring complex mathematical equations or calculation by directly comparing an object image with a standard model image. An optical vision chip includes the first display element(10), the second display element(14), and an optical sensor(18). A size and a shape of the first pixel(12) of the first display element and the second pixel(16) of the second display element are overlapped with those of a sensor pixel of the optical sensor. The first display element displays an object image, and the second display element displays a standard model image stored at an external memory. When the second display element displays the standard model image, the brightness of the standard model image is a complement to the brightness of the object image. The optical sensor outputs an electric signal, which expresses an optical difference between the object image and the standard model image, via an electrode line. If the electric signal outputted by the optical sensor is sent to an external display unit, an optical difference of the image can be displayed.
Abstract translation: 提供光学视觉芯片和使用其的图像识别方法来执行图像识别操作，而不需要复杂的数学方程式或通过直接比较对象图像与标准模型图像的计算。 光学视觉芯片包括第一显示元件（10），第二显示元件（14）和光学传感器（18）。 第一显示元件的第一像素（12）和第二显示元件的第二像素（16）的尺寸和形状与光学传感器的传感器像素的尺寸和形状重叠。 第一显示元件显示对象图像，第二显示元件显示存储在外部存储器中的标准模型图像。 当第二显示元件显示标准模型图像时，标准模型图像的亮度是对象图像的亮度的补充。 光学传感器通过电极线输出表示对象图像与标准模型图像之间的光学差的电信号。 如果由光学传感器输出的电信号被发送到外部显示单元，则可以显示图像的光学差异。
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Patent Agency Ranking
公开(公告)号：KR100670827B1
公开(公告)日：2007-01-19
申请号：KR1020050121242
申请日：2005-12-10
Applicant: 한국전자통신연구원
IPC: H01L31/10
CPC classification number: G02B6/12004 , H01L31/0304 , H01L31/105
Abstract: A waveguide p-i-n photodiode is provided to acquire the maximum coupling coefficient between the photodiode itself and a single mode optical fiber or a silica waveguide by using a graded index distribution centering on an optical absorption layer. A lower optical guide layer is formed on a substrate(10). An optical absorption layer(18) is formed on the lower optical guide layer. An upper optical guide layer is on the optical absorption layer. A clad layer(26) is formed on the upper optical guide layer. The lower optical guide layer, the optical absorption layer and the upper optical guide layer are used for forming a core layer, wherein the core layer is used as a waveguide. The resultant structure has a symmetrical graded index distribution centering on the optical absorption layer.
Abstract translation: 提供了一种波导p-i-n光电二极管，通过使用以光吸收层为中心的渐变折射率分布来获得光电二极管本身与单模光纤或二氧化硅波导之间的最大耦合系数。 在基板（10）上形成下部光导层。 在下光导层上形成光吸收层（18）。 上光导层位于光吸收层上。 覆盖层（26）形成在上光导层上。 下光导层，光吸收层和上光导层用于形成芯层，其中芯层用作波导。 所得结构具有以光吸收层为中心的对称分级折射率分布。
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公开(公告)号：KR100576776B1
公开(公告)日：2006-05-08
申请号：KR1020040103665
申请日：2004-12-09
Applicant: 한국전자통신연구원
IPC: H01S5/30
Abstract: 본 발명은 가입자용이나 파장분할다중(WDM) 방식의 광통신 시스템에 사용되는 반도체 광소자의 제작 방법에 관한 것으로, 단일 활성층에 레이저 다이오드(Laser Diode; LD)와 반도체 광증폭기(Semiconductor Optical Amplifier; SOA)가 집적된다. 레이저 다이오드와 반도체 광증폭기는 서로 광학적으로 연결되며, 이온 주입에 의해 전기적으로 절연된다. 각각의 전극을 통해 독립적으로 전류를 주입하면 레이저 다이오드(LD)에서 생성된 광이 반도체 광증폭기(SOA)에 의해 증폭되기 때문에 발진개시전류가 낮고 출력광의 세기가 높다.
반도체 광증폭기, 레이저 다이오드, 전류차단층, 전류주입층, 이온주입Abstract translation: 激光二极管（LD）和半导体光放大器（SOA）用于单个有源层， 被集成。 激光二极管和半导体光放大器彼此光学连接并通过离子注入电绝缘。 当注入电流独立地通过每个电极为低时，振荡起动电流高时，由于在激光二极管（LD）产生的光由半导体光学放大器（SOA）放大的光的输出强度。
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公开(公告)号：KR1020040094190A
公开(公告)日：2004-11-09
申请号：KR1020030028186
申请日：2003-05-02
Applicant: 한국전자통신연구원
IPC: H01S3/10
CPC classification number: H01S5/06256 , H01S5/028 , H01S5/06258 , H01S5/1209 , H01S5/125 , H01S5/2205 , H01S5/227
Abstract: PURPOSE: An SG-DFB(Sampled Grating Distributed Feed-Back) tunable semiconductor laser WITH an SG-DBR(Sampled Grating Distributed Bragg Reflector) is provided to tune a wavelength by integrating an SG-DFB structure and an SG-DBR structure and forming a phase control region of the SG-DFB structure. CONSTITUTION: A sampled grating(39) is formed on an n-type InP substrate(31) used as a lower clad layer. A phase control region of an InGaAsP waveguide and a gain region of an active layer are formed on the sampled grating. A p-type InP clad layer(32) used as an upper clad layer is formed thereon. A plurality of electrodes are formed on the p-type InP clad layer. A phase control region electrode(36) is formed on the phase control region. A gain region electrode(37) is formed on the gain region. A non-reflective thin film(33) is formed on a section of a semiconductor laser diode.
Abstract translation: 目的：提供具有SG-DBR（采样光栅分布式布拉格反射器）的SG-DFB（采样光栅分布式反馈）可调谐半导体激光器，通过集成SG-DFB结构和SG-DBR结构并形成 SG-DFB结构的相位控制区域。 构成：在用作下包层的n型InP衬底（31）上形成采样光栅（39）。 在采样光栅上形成InGaAsP波导的相位控制区域和有源层的增益区域。 在其上形成用作上覆盖层的p型InP覆盖层（32）。 在p型InP覆盖层上形成多个电极。 相位控制区电极（36）形成在相位控制区域上。 增益区电极（37）形成在增益区上。 在半导体激光二极管的一部分上形成非反射薄膜（33）。
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公开(公告)号：KR1020140078188A
公开(公告)日：2014-06-25
申请号：KR1020120147254
申请日：2012-12-17
Applicant: 한국전자통신연구원
CPC classification number: G02B6/125 , G02B6/12011
Abstract: A waveguide with a reduced phase error and a photonics device including the same are provided. A waveguide structure may include a lower clad; a core pattern which has at least one curved section and is provided on the lower clad; a beam deflection pattern which is disposed on the core pattern; and an upper clad which covers the core pattern with the beam deflection pattern. The beam deflection pattern is made of a material with a refractive index larger than that of the upper clad and smaller than or equal to that of the core pattern and may include a portion with a width which is increased or decreased, or vibrates according to the curved section.
Abstract translation: 提供具有减小的相位误差的波导和包括该波导的光子器件。 波导结构可以包括下包层; 具有至少一个弯曲部分并设置在下部包层上的芯图案; 设置在芯图案上的光束偏转图案; 以及用光束偏转图案覆盖芯图案的上包层。 光束偏转图案由折射率大于上部包层并且小于或等于芯图案的折射率的材料制成，并且可以包括具有增加或减小的宽度的部分，或者根据 弯曲部分。
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公开(公告)号：KR101381900B1
公开(公告)日：2014-04-04
申请号：KR1020100095996
申请日：2010-10-01
Applicant: 한국전자통신연구원
CPC classification number: H01P7/088 , G02F1/0147 , G02F1/3132 , H01P1/2135
Abstract: 링 공진기의 공진파장 가변 방법이 제공된다. 링 공진기의 공진파장 가변 방법은 링 도파로 및 링 도파로를 피복하는 유전체층을 포함하는 링 공진기를 준비하고, 링 공진기를 가열하여 유전체층의 굴절률 상변화(refractive index phase change)를 유도하는 것을 포함한다.
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