公开(公告)号：SG176449A1

公开(公告)日：2011-12-29

申请号：SG2011080819

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Abstract: ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMSAbstractAntimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such filmsFigure 1

公开(公告)号：DE69838502T2

公开(公告)日：2008-07-24

申请号：DE69838502

申请日：1998-06-26

Applicant: INFINEON TECHNOLOGIES AG ,  ADVANCED TECH MATERIALS

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  VAN BUSKIRK PETER C ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C23C16/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105

Abstract: A low temperature CVD process using a tris (beta-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：AU5145701A

公开(公告)日：2001-10-30

申请号：AU5145701

申请日：2001-04-09

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONG-YING ,  BAUM THOMAS H ,  HENDRIX BRYAN C

IPC: C23C16/40 ,  H01L21/28 ,  H01L21/316 ,  H01L21/334 ,  H01L29/51 ,  C23C8/00 ,  C23C16/00

Abstract: Silicon precursors for forming silicon films. Hexacoordinated silicon beta-diketonate compositions are described, of the formula R2Si(-diketonate)2 or (RO)2Si(beta-diketonate)2, wherein each R is the same as or different from the other R, and each R is independently selected from H, aryl, fluoroaryl, C1-C12 alkyl, C1-C12 fluoroalkyl and C1-C12 silicon-containing alkyl. The precursors are compatible with dopant co-precursors such as transition metal beta-diketonate coordination complexes. The compositions enable low temperature (e.g.,

公开(公告)号：AU8377498A

公开(公告)日：1999-01-19

申请号：AU8377498

申请日：1998-06-26

Applicant: ADVANCED TECH MATERIALS ,  SIEMENS AG

Inventor： HINTERMAIER FRANK S ,  DEHM CHRISTINE ,  HOENLEIN WOLFGANG ,  BUSKIRK PETER C VAN ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BAUM THOMAS H ,  DESROCHERS DEBRA A

IPC: B32B9/00 ,  C01G35/00 ,  C23C16/40 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  C23C16/00

Abstract: A low temperature CVD process using a tris (beta-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

公开(公告)号：WO2012177642A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043153

申请日：2012-06-19

Applicant: ADVANCED TECH MATERIALS ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

Inventor： HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  CHEN ING-SHIN BARRY ,  ROEDER JEFFREY F ,  STAUF GREGORY T

IPC: H01L21/31 ,  H01L21/205

CPC classification number: H01L28/55 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/0228 ,  H01L27/108

Abstract: High-k materials and devices, e.g., DRAM capacitors, and methods of making and using the same. Various methods of forming perovskite films are described, including methods in which perovskite material is deposited on the substrate by a pulsed vapor deposition process involving contacting of the substrate with perovskite material-forming metal precursors. In one such method, the process is carried out with doping or alloying of the perovskite material with a higher mobility and/or higher volatility metal species than the metal species in the perovskite material- forming metal precursors. In another method, the perovskite material is exposed to elevated temperature for sufficient time to crystallize or to enhance crystallization of the perovskite material, followed by growth of the perovskite material under pulsed vapor deposition conditions. Various perovskite compositions are described, including: (Sr, Pb)TiO3; SrRuO3 or SrTiO3, doped with Zn, Cd or Hg; Sr(Sn,Ru)O3; and Sr(Sn,Ti)O3.

Abstract translation: 高k材料和器件，例如DRAM电容器，以及制造和使用它们的方法。 描述了形成钙钛矿薄膜的各种方法，包括其中通过脉冲气相沉积工艺将钙钛矿材料沉积在基底上的方法，包括使基底与形成钙钛矿的金属前体接触。 在一种这样的方法中，该方法通过钙钛矿材料的掺杂或合金化与在形成钙钛矿材料的金属前体中的金属物质具有更高的迁移率和/或更高的挥发性金属物质进行。 在另一种方法中，将钙钛矿材料暴露于升高的温度足够的时间以结晶或增强钙钛矿材料的结晶，随后在脉冲气相沉积条件下生长钙钛矿材料。 描述了各种钙钛矿组合物，包括：（Sr，Pb）TiO 3; SrRuO3或SrTiO3，掺杂Zn，Cd或Hg; SR（锡，钌）O3; 和Sr（Sn，Ti）O 3。

公开(公告)号：WO2010120954A3

公开(公告)日：2011-03-24

申请号：PCT/US2010031125

申请日：2010-04-14

Applicant: ADVANCED TECH MATERIALS ,  ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  STAUF GREGORY T ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  XU CHONGYING

Inventor： ROEDER JEFFREY F ,  HENDRIX BRYAN C ,  BILODEAU STEVEN M ,  STAUF GREGORY T ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  XU CHONGYING

IPC: H01G4/018

CPC classification number: H01G4/1209 ,  C04B35/49 ,  C04B35/491 ,  C04B35/6325 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/441 ,  C04B2235/449 ,  H01G4/1218 ,  H01G4/1236 ,  H01G4/1254 ,  H01G4/20 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/3142 ,  H01L28/40 ,  Y10T428/12493 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/1284

Abstract: A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.

Abstract translation: 包括早期过渡金属或金属氧化物基材以及选自Nb，Ge，Ta，La，Y，Ce，Pr，Nd，Gd，Dy中的掺杂剂，共沉积，合金化或分层次级材料的复合电介质材料 ，Sr，Ba，Ca和Mg，以及这些金属的氧化物，以及作为掺杂剂或合金化二次材料的氧化铝。 这种复合电介质材料可以通过使用合适的前体的气相沉积工艺（例如ALD）形成微电子器件，例如铁电高k电容器，栅极结构，DRAM等。

公开(公告)号：WO2009059237A3

公开(公告)日：2009-09-24

申请号：PCT/US2008082134

申请日：2008-10-31

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  HENDRIX BRYAN C ,  HUNKS WILLIAM ,  CAMERON THOMAS M ,  STENDER MATTHIAS ,  STAUF GREGORY T ,  ROEDER JEFFREY F

IPC: C07F9/94

CPC classification number: C07F9/94

Abstract: Bismuth precursors having utility for forming highly conformal bismuth-containing films by low temperature (

Abstract translation: 具有用于通过低温（<300℃）气相沉积方法如CVD和ALD形成高保形含铋膜的铋前体，包括氨基铋，胍铋酸盐，异钌酸铋，氨基甲酸铋和硫代氨基甲酸铋，β-二酮铋酸铋 铋铋，二酮铋，铋铋，铋基铋，烷氧基铋，铋配合物，铋甲硅烷基酰胺，铋螯合酰胺和铋二碲酰亚胺二磷酸铋。 还描述了制备这种前体的方法，以及适用于制造微电子器件产品的这种前体的包装形式。 这些铋前体有利地用于形成含铋的膜，例如GBT，Bi2Te3，Bi4Ti3O12，SrBi2Ta2O9，Bi-Ta-O，BiP和含热电铋膜的膜。

公开(公告)号：WO2008128141A3

公开(公告)日：2009-01-08

申请号：PCT/US2008060162

申请日：2008-04-13

Applicant: ADVANCED TECH MATERIALS ,  XU CHONGYING ,  ROEDER JEFFREY F ,  CHEN TIANNIU ,  HENDRIX BRYAN C ,  BENAC BRIAN ,  CAMERON THOMAS M ,  PETERS DAVID W ,  STAUF GREGORY T ,  MAYLOTT LEAH

Inventor： XU CHONGYING ,  ROEDER JEFFREY F ,  CHEN TIANNIU ,  HENDRIX BRYAN C ,  BENAC BRIAN ,  CAMERON THOMAS M ,  PETERS DAVID W ,  STAUF GREGORY T ,  MAYLOTT LEAH

IPC: C23C16/30 ,  C07F7/00 ,  C23C16/00

CPC classification number: C07F7/006 ,  C07C211/65 ,  C07F17/00 ,  C23C16/18 ,  C23C16/405

Abstract: Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium- containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.

Abstract translation: 分别用于相应的含锆，含铪，含钛和含硅膜的原子层沉积（ALD）和化学气相沉积（CVD）的锆，铪，钛和硅前体。 所公开的前体实现了以最小碳掺入为特征的高度保形的沉积膜。

公开(公告)号：WO2007147020A3

公开(公告)日：2008-05-02

申请号：PCT/US2007071153

申请日：2007-06-13

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  C23C16/02

CPC classification number: C07F17/02 ,  C07F15/06 ,  C07F15/065 ,  C23C16/18

Abstract: Cobalt precursors for forming metallic cobalt thin films in the manufacture of semiconductor devices, and methods of depositing the cobalt precursors on substrates, e.g., using chemical vapor deposition or atomic layer deposition processes. Packaged cobalt precursor compositions, and microelectronic device manufacturing systems are also described.

Abstract translation: 用于在制造半导体器件中形成金属钴薄膜的钴前体，以及在基底上沉积钴前体的方法，例如使用化学气相沉积或原子层沉积工艺。 还描述了包装的钴前体组合物和微电子器件制造系统。

公开(公告)号：WO2008028170A2

公开(公告)日：2008-03-06

申请号：PCT/US2007077466

申请日：2007-08-31

Applicant: ADVANCED TECH MATERIALS ,  CLEARY JOHN M ,  ARNO JOSE I ,  HENDRIX BRYAN C ,  NAITO DONN ,  BATTLE SCOTT ,  GREGG JOHN ,  WODJENSKI MICHAEL J ,  XU CHONGYING

Inventor： CLEARY JOHN M ,  ARNO JOSE I ,  HENDRIX BRYAN C ,  NAITO DONN ,  BATTLE SCOTT ,  GREGG JOHN ,  WODJENSKI MICHAEL J ,  XU CHONGYING

IPC: B01J7/00

CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract translation: 用于挥发容易产生颗粒或在相应的源试剂蒸气中存在颗粒的源试剂的装置和方法，其中通过蒸气产生系统的结构或加工特征抑制了这种颗粒产生或存在。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。