公开(公告)号：US20210381826A1

公开(公告)日：2021-12-09

申请号：US17412525

申请日：2021-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper BIJNEN ,  Junichi KANEHARA ,  Stefan Carolus Jacobus Antonius KEIJ ,  Thomas Augustus MATTAAR ,  Petrus Franciscus VAN GILS

IPC: G01B11/27

Abstract: In order to improve the throughput performance and/or economy of a measurement apparatus, the present disclosure provides a metrology apparatus including: a first measuring apparatus; a second measuring apparatus; a first substrate stage configured to hold a first substrate and/or a second substrate; a second substrate stage configured to hold the first substrate and/or the second substrate; a first substrate handler configured to handle the first substrate and/or the second substrate; and a second substrate handler configured to handle the first substrate and/or the second substrate, wherein the first substrate is loaded from a first, second or third FOUP, wherein the second substrate is loaded from the first, second or third FOUP, wherein the first measuring apparatus is an alignment measuring apparatus, and wherein the second measuring apparatus is a level sensor, a film thickness measuring apparatus or a spectral reflectance measuring apparatus.

公开(公告)号：US20200081356A1

公开(公告)日：2020-03-12

申请号：US16686418

申请日：2019-11-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Edo Maria HULSEBOS ,  Henricus Johannes Lambertus MEGENS ,  Sudharshanan RAGHUNATHAN ,  Boris MENCHTCHIKOV ,  Ahmet Koray ERDAMAR ,  Loek Johannes Petrus VERHEES ,  Willem Seine Christian ROELOFS ,  Wendy Johanna Martina VAN DE VEN ,  Hadi YAGUBIZADE ,  Hakki Ergün CEKLI ,  Ralph BRINKHOF ,  Tran Thanh Thuy VU ,  Maikel Robert GOOSEN ,  Maaike VAN'T WESTEINDE ,  Weitian KOU ,  Manouk RIJPSTRA ,  Matthijs COX ,  Franciscus Godefridus Casper BIJNEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

公开(公告)号：US20190235391A1

公开(公告)日：2019-08-01

申请号：US16229009

申请日：2018-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper BIJNEN ,  Edo Maria Hulsebos ,  Henricus Johannes Lambertus Megens ,  Robert John Socha ,  Youping Zhang

IPC: G03F7/20 ,  G03F9/00 ,  G06F17/50

CPC classification number: G03F7/7085 ,  G03F7/70425 ,  G03F7/70516 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7046 ,  G03F9/7088 ,  G06F17/5068

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

公开(公告)号：US20180356742A1

公开(公告)日：2018-12-13

申请号：US15778517

申请日：2016-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Cayetano SANCHEZ-FABRES COBALEDA ,  Franciscus Godefridus Casper BIJNEN ,  Edo Maria HULSEBOS ,  Arie Jeffrey DEN BOEF ,  Marcel Hendrikus Maria BEEMS ,  Piotr Michal STOLARZ

IPC: G03F9/00 ,  G03F7/20

Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.

公开(公告)号：US20180196363A1

公开(公告)日：2018-07-12

申请号：US15742028

申请日：2016-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper BIJNEN ,  Edo Maria HULSEBOS

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7046 ,  G03F7/70258 ,  G03F7/705 ,  G03F9/7069 ,  G03F9/7073 ,  G03F9/7088

Abstract: A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: —a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: —determine, for each of the plurality of alignment mark position measurements, a positional deviation as a difference between an expected alignment mark position and a measured alignment mark position, the measured alignment mark position being determined based on the respective alignment mark position measurement; —define a set of functions as possible causes for the positional deviations, the set of functions including a substrate deformation function representing a deformation of the substrate, and at least one mark deformation function representing a deformation of the one or more alignment marks; —generating a matrix equation PD=M*F whereby a vector PD comprising the positional deviations is set equal to a weighted combination, represented by a weight coefficient matrix M, of a vector F comprising the substrate deformation function and the at least one mark deformation function, whereby weight coefficients associated with the at least one mark deformation function vary depending on applied alignment measurement; —determining a value for the weight coefficients of the matrix M; —determining an inverse or pseudo-inverse matrix of the matrix M, thereby obtaining a value for the substrate deformation function as a weighted combination of the positional deviations. —applying the value of the substrate deformation function to perform an alignment of the target portion with the patterned radiation beam.