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公开(公告)号：US20220392741A1
公开(公告)日：2022-12-08
申请号：US17770043
申请日：2020-10-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Maikel Robert GOOSEN , Erwin Paul SMAKMAN
IPC: H01J37/26 , H01J37/28 , H01J37/244 , H01J37/22
Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.
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2.发明申请公开(公告)号：US20220328282A1
公开(公告)日：2022-10-13
申请号：US17726421
申请日：2022-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Yifeng SHAO , Maikel Robert GOOSEN
IPC: H01J37/22 , H01J37/28 , H01J37/153 , H01J37/244
Abstract: A method of determining aberrations in images obtained by a charged-particle beam tool, comprising: a) obtaining two or more images of a sample, wherein each image is obtained at a known relative difference in a measurement condition of the charged-particle beam tool; b) selecting an estimated aberration parameter for the aberrations of a probe profile representing the charged-particle beam used by the charged-particle beam tool; c) evaluating an error function indicative of the difference between the two or more images and two or more estimated images that are a function of the estimated aberration parameter and the known relative difference in the measurement condition; d) updating the estimated aberration parameter; e) performing processes c) and d) iteratively; f) determining the final aberration parameter as the estimated aberration parameter that provides the smallest value of the error function.
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公开(公告)号：US20200081356A1
公开(公告)日：2020-03-12
申请号：US16686418
申请日：2019-11-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20170176870A1
公开(公告)日：2017-06-22
申请号：US15384084
申请日：2016-12-19
Applicant: ASML Netherlands B.V.
Inventor： Paul Christiaan HINNEN , Simon Gijsbert Josephus MATHIJSSEN , Maikel Robert GOOSEN , Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF
IPC: G03F7/20
CPC classification number: G03F7/70525 , G03F7/702 , G03F7/70641 , G03F7/70683 , G03F7/7085
Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.
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公开(公告)号：US20220199355A1
公开(公告)日：2022-06-23
申请号：US17566518
申请日：2021-12-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Albertus Victor Gerardus MANGNUS , Maikel Robert GOOSEN
IPC: H01J37/153 , H01J37/28
Abstract: Disclosed among other aspects is a charged particle inspection system including a phaseplate configured and arranged to modify the local phase of charged particles in a beam to reduce the effects of lens aberrations. The phaseplate is made up of an array of apertures with the voltage and/or a degree of obscuration of the apertures being controlled individually or in groups.
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Patent Agency Ranking
公开(公告)号：US20190094721A1
公开(公告)日：2019-03-28
申请号：US16132520
申请日：2018-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Sudharshanan RAGHUNATHAN , Boris MENCHTCHIKOV , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN'T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号：US20190086824A1
公开(公告)日：2019-03-21
申请号：US16085000
申请日：2017-02-14
Applicant: ASML NETHERLANDS B.V.
IPC: G03F9/00
Abstract: A method of determining positions of marks, the marks comprising periodic structures, at least some of the structures comprising periodic sub-structures, the sub-structures having a smaller period than the structures, the marks formed with positional offsets between the sub-structures and structures, the positional offsets caused by a combination of both known and unknown components, the method comprising illuminating a plurality of the marks with radiation having different characteristics, detecting radiation diffracted by the marks using one or more detectors which produce output signals, discriminating between constituent parts of the signals, the discriminating based on a variation of the signals as a function of spatial positions of the marks on a substrate, selecting at least one of the constituent parts of the signals, and using the at least one selected constituent part, and information relating to differences between the known components, to calculate a corrected position of at least one mark.
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公开(公告)号：US20230048580A1
公开(公告)日：2023-02-16
申请号：US17790097
申请日：2021-01-04
Applicant: ASML NETHERLANDS B.V.
IPC: H01J37/153
Abstract: An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.
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公开(公告)号：US20220148842A1
公开(公告)日：2022-05-12
申请号：US17430307
申请日：2020-02-04
Applicant: ASML Netherlands B.V.
Inventor： Shakeeb Bin HASAN , Yan REN , Maikel Robert GOOSEN , Albertus Victor Gerardus MANGNUS , Erwin Paul SMAKMAN
IPC: H01J37/04
Abstract: Disclosed among other aspects is a charged particle inspection system including an absorbing component and a programmable charged-particle mirror plate arranged to modify the energy distribution of electrons in a beam and shape the beam to reduce the energy spread of the electrons and aberrations of the beam, with the absorbing component including a set of absorbing structures configured as absorbing structures provided on a transparent conductive layer and a method using such an absorbing component and with the programmable charged-particle mirror plate including a set of pixels configured to generate a customized electric field to shape the beam and using such a programmable charged-particle mirror plate.
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公开(公告)号：US20200312619A1
公开(公告)日：2020-10-01
申请号：US16830204
申请日：2020-03-25
Applicant: ASML Netherlands B.V.
IPC: H01J37/317 , H01J37/244 , H01J37/24 , H01J37/304
Abstract: Systems and methods of measuring beam current in a multi-beam apparatus are disclosed. The multi-beam apparatus may include a charged-particle source configured to generate a primary charged-particle beam, and an aperture array. The aperture array may comprise a plurality of apertures configured to form a plurality of beamlets from the primary charged-particle beam, and a detector including circuitry to detect a current of at least a portion of the primary charged-particle beam irradiating the aperture array. The method of measuring beam current may include irradiating the primary charged-particle beam on the aperture array and detecting an electric current of at least a portion of the primary charged-particle beam.
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