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    Method of determining edge placement error, inspection apparatus, patterning device, substrate and device manufacturing method
    23.
    发明授权
    Method of determining edge placement error, inspection apparatus, patterning device, substrate and device manufacturing method 有权

    公开(公告)号：US10156797B2

    公开(公告)日：2018-12-18

    申请号：US15114368

    申请日：2015-01-22

    Applicant: ASML Netherlands B.V.

    Inventor： Seyed Iman Mossavat ,  Hugo Augustinus Joseph Cramer ,  Maurits Van Der Schaar

    IPC: G03F7/20 ,  G01B11/27

    Abstract: A method of determining edge placement error within a structure produced using a lithographic process, the method including: receiving a substrate having a first structure produced using the lithographic process, the first structure having first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; receiving a target signal indicative of a first target relative position which is indicative of target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during the lithographic process; detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and ascertaining an edge placement error parameter on the basis of first signal and the first target relative position.

    METROLOGY METHOD, TARGET AND SUBSTRATE
    24.
    发明申请
    METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
    计量方法，目标和底物

    公开(公告)号：US20160061589A1

    公开(公告)日：2016-03-03

    申请号：US14835504

    申请日：2015-08-25

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Kaustuve BHATTACHARYYA ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

    IPC: G01B11/14

    CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

    Abstract translation: 具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的 设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构 子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构 并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

    Inspection Methods, Inspection Apparatuses, and Lithographic Apparatuses
    25.
    发明申请
    Inspection Methods, Inspection Apparatuses, and Lithographic Apparatuses 有权
    检验方法，检验仪器和平版印刷设备

    公开(公告)号：US20140176955A1

    公开(公告)日：2014-06-26

    申请号：US14190036

    申请日：2014-02-25

    Applicant: ASML Netherlands B.V.

    Inventor： Andreas FUCHS ,  Maurits Van Der Schaar ,  Scott Anderson Middlebrooks ,  Panagiotis Pieter Bintevinos

    IPC: G03F7/20

    CPC classification number: G03F7/70633 ,  G01N21/956

    Abstract: A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.

    Abstract translation: 用于确定覆盖误差的方法包括测量从衬底上的多个靶中的每一个反射的辐射的不对称性。 多个目标包括预定的覆盖偏移。 该方法还包括将从多个目标中的每一个反射的辐射的测量的不对称性与相应目标的对应的预定叠加偏移进行比较。 另外，该方法包括根据从该点反射的测量的不对称性来确定衬底上的点的重叠误差。 通过将多项式或傅里叶级数拟合到从多个目标中的每一个反射的辐射的测量的不对称与相应目标的对应的预定叠加偏移的比较来确定该功能。 该功能限制了线性误差的影响。

    Metrology using a plurality of metrology target measurement recipes
    29.
    发明授权
    Metrology using a plurality of metrology target measurement recipes 有权

    公开(公告)号：US11187995B2

    公开(公告)日：2021-11-30

    申请号：US16346135

    申请日：2017-11-01

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Victor Emanuel Calado ,  Youping Zhang ,  Maurits Van Der Schaar ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu

    IPC: G03F7/20

    Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

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