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21.发明公开PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开除去方法基板和化学机械清洗机的材料，近地层这个过程
公开(公告)号：EP2507824A4
公开(公告)日：2013-09-25
申请号：EP10832736
申请日：2010-11-25
Applicant: BASF SE
Inventor： RAMAN VIJAY IMMANUEL , EBERT SOPHIA , BRANDS MARIO , LAN YONGQING , ZACHARIAS PHILIPP , GUBAYDULLIN ILSHAT , LI YUZHUO
IPC: H01L21/321 , C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
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Patent Agency Ranking22.发明公开
公开(公告)号：EP3180406A4
公开(公告)日：2018-04-11
申请号：EP15831838
申请日：2015-07-24
Applicant: BASF SE
Inventor： LAN YONGQING , NOLLER BASTIAN MARTEN , JIANG LIANG , SHEN DANIEL KWO HUNG , GOLZARIAN REZA
IPC: H01L21/321 , C09G1/02 , C09K3/14
CPC classification number: C09K3/14 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.
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23.发明公开CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID 审中-公开化学 - 机械制剂POLIERZUSAMMENSETZUNGEN MIT N，N，N'，N'-四（2-羟基丙基） - 乙炔基胺甲基磺酰胺
公开(公告)号：EP2997103A4
公开(公告)日：2016-11-02
申请号：EP14797276
申请日：2014-05-06
Applicant: BASF SE
Inventor： LAN YONGQING , PRZYBYLSKI PETER , BAO ZHENYU , PRÖLSS JULIAN
CPC classification number: C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/30625
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract translation: 其中所述组合物的pH在2至6的范围内。
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24.发明公开PROCESS FOR REMOVING BULK MATERIAL LAYER FROM SUBSTRATE AND CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开VERFAHREN ZUR ENTFERNUNG EINER MATERIALMASSESCHICHT VON EINEM SUBSTRAT UND CHEMISCH-MECHANISCHES REINIGUNGSMITTELFÜRDIESES VERFAHREN
公开(公告)号：EP2507332A4
公开(公告)日：2017-08-02
申请号：EP10832737
申请日：2010-11-25
Applicant: BASF SE
Inventor： RAMAN VIJAY IMMANUEL , LI YUZHUO , BRANDS MARIO , LAN YONGQING , RUSHING KENNETH , RAMJI KARPAGAVALLI
IPC: C09G1/02 , B01J13/14 , C09K3/14 , H01L21/321
CPC classification number: H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
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公开(公告)号：EP2997105A4
公开(公告)日：2017-01-25
申请号：EP14797941
申请日：2014-05-05
Applicant: BASF SE
Inventor： LAN YONGQING , PRZYBYLSKI PETER , BAO ZHENYU , PRÖLSS JULIAN
CPC classification number: C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/02024 , H01L21/30612 , H01L21/30625
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract translation: 描述了一种化学机械抛光（CMP）组合物，其包含以下组分：（A）在pH为2至6（B）的范围内具有-15mV或更低的ζ电位的表面改性二氧化硅颗粒，或 更多的聚乙烯亚胺（C）水（D）任选地一种或多种另外的组分，其中组合物的pH在2至6的范围内。
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26.发明公开CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING ONE OR MORE POLYMERS SELECTED FROM THE GROUP CONSISTING OF N-VINYL-HOMOPOLYMERS AND N-VINYL COPOLYMERS 审中-公开与一个或聚合物组成的组MORE FROM N-乙烯基均聚物和N-乙烯基共聚物的CMP组合物
公开(公告)号：EP2997102A4
公开(公告)日：2017-01-25
申请号：EP14797029
申请日：2014-05-05
Applicant: BASF SE
Inventor： LAN YONGQING , PRZYBYLSKI PETER , BAO ZHENYU , PRÖLSS JULIAN
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1436 , C09K3/1463
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.
Abstract translation: 描述了一种化学 - 机械抛光（CMP）组合物包含以下组分：（A）表面改性的二氧化硅颗粒在2至6（B）的范围内具有在pH -15毫伏或更低的负的Zeta电位的一个或 选自N-乙烯基均聚物和N-乙烯基共聚物（C）和水（D）中选择的多种聚合物任选的一种或多种成分另外，在worin组合物的pH在2至第六的范围
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