公开(公告)号：SG11201700887WA

公开(公告)日：2017-03-30

申请号：SG11201700887W

申请日：2015-07-24

Applicant: BASF SE

Inventor： LAN YONGQING ,  NOLLER BASTIAN MARTEN ,  JIANG LIANG ,  SHEN DANIEL KWO-HUNG ,  GOLZARIAN REZA

IPC: C09K3/14 ,  H01L21/304

公开(公告)号：SG11201704287TA

公开(公告)日：2017-07-28

申请号：SG11201704287T

申请日：2015-12-11

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00 ,  C09G1/02

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704496RA

公开(公告)日：2017-07-28

申请号：SG11201704496R

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704280QA

公开(公告)日：2017-07-28

申请号：SG11201704280Q

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201700255UA

公开(公告)日：2017-02-27

申请号：SG11201700255U

申请日：2015-07-14

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  PRÖLSS JULIAN ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：EP3180406A4

公开(公告)日：2018-04-11

申请号：EP15831838

申请日：2015-07-24

Applicant: BASF SE

Inventor： LAN YONGQING ,  NOLLER BASTIAN MARTEN ,  JIANG LIANG ,  SHEN DANIEL KWO HUNG ,  GOLZARIAN REZA

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14

CPC classification number: C09K3/14 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.