公开(公告)号：AT466310T

公开(公告)日：2010-05-15

申请号：AT02713620

申请日：2002-02-11

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  MIZUSAWA KEN-ICHI ,  ARASE SHIN-YA ,  PULIGADDA RAMA

IPC: G03F7/004 ,  G03F7/11 ,  C08F18/00 ,  C08F18/16 ,  C08F220/12 ,  C08F220/22 ,  C08F220/28 ,  C09D133/16 ,  G03F7/038 ,  G03F7/09 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: Anti-reflective coatings formed from polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

公开(公告)号：AU2002259251A1

公开(公告)日：2002-12-16

申请号：AU2002259251

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  HUANG RUNHUI ,  FLAIM TONY D ,  PULIGADDA RAMA ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  B05D3/02 ,  C08F8/32 ,  C08G59/16 ,  C08F120/32 ,  C08G59/14 ,  C08F8/00 ,  C08F8/14

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

公开(公告)号：AU7602600A

公开(公告)日：2001-06-12

申请号：AU7602600

申请日：2000-09-20

Applicant: BREWER SCIENCE INC

Inventor： SHAO XIE ,  COX ROBERT ,  DESHPANDE SHREERAM V ,  FLAIM TONY D ,  PULIGADDA RAMA

IPC: G03F7/004 ,  C08G18/38 ,  C08G59/16 ,  G03F7/09 ,  G03F7/11 ,  G03C1/76 ,  G03C1/825 ,  G03C1/815

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

公开(公告)号：WO02099531A2

公开(公告)日：2002-12-12

申请号：PCT/US0215694

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  LAMB JAMES E III ,  FLAIM TONY D ,  HUANG RUNHUI ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  G03F

CPC classification number: G03F7/091 ,  Y10S438/952 ,  Y10T428/31511 ,  Y10T428/31525

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract translation: 提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。 在一个实施方案中，组合物包括包含具有未反应的环氧基团的重复单体的聚合物。 在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环氧化物环的重复单体。 组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

公开(公告)号：WO2010080789A2

公开(公告)日：2010-07-15

申请号：PCT/US2010020199

申请日：2010-01-06

Applicant: BREWER SCIENCE INC ,  LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

Abstract translation: 提供了新的双重和三重图案化方法。 所述方法包括将可收缩的组合物应用于图案化的模板结构（例如，具有线的结构）并加热组合物。 可收缩组合物被选择为具有使其在加热期间收缩的性质，从而在图案化模板结构上形成共形层。 然后蚀刻该层以留下预间隔结构，其包含来自图案的特征，其中可收缩组合物的残余物邻近特征侧壁。 功能被删除，留下了一倍的模式。 在替代实施例中，可以在模板结构上形成特征之前执行额外蚀刻步骤，从而允许图案增加三倍而不是加倍。

公开(公告)号：WO2010051212A2

公开(公告)日：2010-05-06

申请号：PCT/US2009061633

申请日：2009-10-22

Applicant: BREWER SCIENCE INC ,  HONG WENBIN ,  BAI DONGSHUN ,  FLAIM TONY D ,  PULIGADDA RAMA

Inventor： HONG WENBIN ,  BAI DONGSHUN ,  FLAIM TONY D ,  PULIGADDA RAMA

IPC: H01L21/302 ,  H01L21/304

CPC classification number: H01L21/187 ,  C08G2261/332 ,  C08G2261/418 ,  C08L65/00 ,  C09J123/0823 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T156/10 ,  Y10T156/1153 ,  Y10T428/24355 ,  Y10T428/24802

Abstract: New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened or dissolved to allow the wafers to slide or be pulled apart at the appropriate stage in the fabrication process.

Abstract translation: 提供了使用这些组合物作为粘合组合物的新组合物和方法。 所述组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可用于将活性晶片结合到载体晶片或衬底上，以辅助在后续处理和处理期间保护活性晶片及其活性部位。 该组合物形成化学和耐热的粘合层，但也可以软化或溶解以允许晶片在制造过程中的适当阶段滑动或拉开。

公开(公告)号：WO2012057893A3

公开(公告)日：2012-07-12

申请号：PCT/US2011046751

申请日：2011-08-05

Applicant: BREWER SCIENCE INC ,  PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

Inventor： PULIGADDA RAMA ,  ZHONG XING-FU ,  FLAIM TONY D ,  MCCUTCHEON JEREMY

IPC: H01L21/20

CPC classification number: H01L21/6835 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  H01L21/2007 ,  H01L21/6836 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T156/10 ,  Y10T156/11 ,  Y10T156/1126 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/31511 ,  Y10T428/31551 ,  Y10T428/31663 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31935 ,  Y10T428/31938 ,  H01L2924/00

Abstract: Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

Abstract translation: 提供了临时连接半导体衬底的多个键合层方案。 在本发明的键合方案中，至少一个层直接与半导体衬底接触，并且该方案内的至少两个层彼此直接接触。 当多层结构内的不同层执行特定功能时，本发明提供了多种处理选项。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装在晶片的正面上保护凸块，在剥离步骤中的更低的应力以及更少的数量来提高薄晶片处理解决方案的性能 正面缺陷。

公开(公告)号：WO2004036311A3

公开(公告)日：2004-12-09

申请号：PCT/US0329819

申请日：2003-09-19

Applicant: BREWER SCIENCE INC

Inventor： ENOMOTO TOMOYUKI ,  NAKAYAMA KEISUKE ,  PULIGADDA RAMA

IPC: B32B27/32 ,  G03F20060101 ,  G03F7/004 ,  G03F7/09 ,  H01L21/44 ,  H01L23/29

CPC classification number: G03F7/091 ,  Y10T428/31938

Abstract: The present invention relates to an anti-reflective coating composition characterized by comprising a resin made from triazine compounds having at least two nitrogen atoms substituted a hydroxymethyl group and/or alkoxymehyl group, and a light absorbing compound and/or a light absorbing resin. The present invention offers an anti-reflective coating composition for the anti-reflective coating having high light absorption property of the light used for the lithography process in the preparation of semiconductor device, showing high reflective light preventing effect, being used at thinner film thickness more than before, and having greater dry etching rate in comparison to photoresist layer.

Abstract translation: 本发明涉及一种减反射涂料组合物，其特征在于包含由具有至少两个氮原子取代羟甲基和/或烷氧基甲基的三嗪化合物制成的树脂，以及光吸收化合物和/或光吸收树脂。 本发明提供一种抗反射涂层组合物，用于制备半导体器件中用于光刻工艺的光具有高光吸收性能的抗反射涂层，显示出高反射光防止效果，在更薄的膜厚处使用 与之前相比，并且与光致抗蚀剂层相比具有更大的干蚀刻速率。

公开(公告)号：WO2004051706A3

公开(公告)日：2004-09-02

申请号：PCT/US0338363

申请日：2003-12-02

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  LAMB JAMES E ,  FLAIM TONY D

IPC: H01L21/312 ,  B05D3/02 ,  B32B17/10 ,  C08F20/26 ,  C08F20/32 ,  C08F220/28 ,  C08G59/32 ,  C08J7/04 ,  C09D163/00 ,  G03F7/09 ,  G03F7/11 ,  H01L20060101 ,  H01L21/027 ,  H01L21/311

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08G59/3218 ,  C08J7/047 ,  C08J2425/00 ,  C08J2433/00 ,  C08J2471/00 ,  C09D163/00 ,  H01L21/0276 ,  H01L21/31144 ,  C08L2666/16

Abstract: Anti-reflective or fill composition which inhibits or blocks via or photoresist poisoning, a method of coating a substrate and curing it, and a cured protective layer derived therefrom comprises a polymer prepared from a first set of recurring monomers containing a ring member reacted with a light attenuating compound, and a second set of recurring monomers having an unreacted ring member.

Abstract translation: 抑制或阻断通路或光致抗蚀剂中毒的抗反射或填充组合物，涂覆基底并固化的方法以及由其衍生的固化保护层包括由第一组含有环成员的重复单体制备的聚合物， 光减弱化合物和具有未反应的环成员的第二组重复单体。

公开(公告)号：EP1673801A4

公开(公告)日：2010-04-07

申请号：EP04795633

申请日：2004-10-15

Applicant: BREWER SCIENCE INC

Inventor： BHAVE MANDAR ,  WASHBURN CARLTON A ,  PULIGADDA RAMA ,  EDWARDS KEVIN

IPC: H01L21/768 ,  G03F7/09 ,  H01L20060101 ,  H01L21/312 ,  H01L21/4763

CPC classification number: G03F7/091 ,  H01L21/312 ,  H01L21/76808

Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the recessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particularly suitable for use at exposure wavelengths of less than about 370 nm.