公开(公告)号：AU7356800A

公开(公告)日：2001-11-07

申请号：AU7356800

申请日：2000-09-06

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  HUANG RUNHUI

IPC: B05D1/40 ,  B05D7/24 ,  C08L61/28 ,  C09D5/32 ,  C09D101/00 ,  C09D133/02 ,  C09D167/00 ,  C09D179/06 ,  G02B1/11 ,  B05D3/02 ,  B05D5/06

Abstract: Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., -CH2-, -CH2-O-CH2-) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values, improved etch rates, and can be formulated for both conformal and planar applications.

公开(公告)号：SG10201912718SA

公开(公告)日：2020-02-27

申请号：SG10201912718S

申请日：2016-06-21

Applicant: BREWER SCIENCE INC

Inventor： ZHONG XING-FU ,  HUANG RUNHUI ,  ZHANG BOYU

Abstract: Planarizing and spin-on-carbon (SOC) compositions that fill vias and/or trenches on a substrate while planarizing the surface in a single thin layer coating process are provided. The compositions can planarize wide ranges of substrates with vias or trenches of from about 20 nm to about 220 nm wide, and up to about 700 nm deep. These extraordinary properties come from the low molecular weight of the polymers used in the materials, thermally-labile protecting groups on the polymers, and a delayed crosslinking reaction.

公开(公告)号：AU2002259251A1

公开(公告)日：2002-12-16

申请号：AU2002259251

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： LAMB JAMES E III ,  HUANG RUNHUI ,  FLAIM TONY D ,  PULIGADDA RAMA ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  B05D3/02 ,  C08F8/32 ,  C08G59/16 ,  C08F120/32 ,  C08G59/14 ,  C08F8/00 ,  C08F8/14

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

公开(公告)号：WO2009018217A3

公开(公告)日：2009-03-26

申请号：PCT/US2008071357

申请日：2008-07-28

Applicant: BREWER SCIENCE INC ,  SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

Inventor： SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

IPC: G03F7/11 ,  C08F212/04 ,  C08F220/10 ,  C08F236/06 ,  G03F7/16

CPC classification number: G03F7/091 ,  C08F212/14 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  C08F220/56 ,  C08F226/06 ,  G03F7/11 ,  Y10T428/31678 ,  Y10T428/31855 ,  Y10T428/31935

Abstract: This invention describes compositions and methods of using non-covalently crosslinked resin coatings for lithographic applications. These materials are designed to undergo, after coating, a change that provides solvent resistance and, with some materials, simultaneous aqueous-base solubility. Non-covalent interactions allow for easier removal of these coatings than of covalcntly crosslinked materials. These types of materials are well-suited for trench and gap fill applications, as well as for anti-reflective coatings, spin-on carbon layers, and etch masks.

Abstract translation: 本发明描述了用于平版印刷应用的非共价交联树脂涂料的组合物和方法。 这些材料被设计成在涂覆之后经历改变，从而提供耐溶剂性，并且在某些材料的情况下同时具有水基溶解性。 与共价交联材料相比，非共价相互作用可以更容易地去除这些涂层。 这些类型的材料非常适合沟槽和间隙填充应用，以及抗反射涂层，旋涂碳层和蚀刻掩膜。

公开(公告)号：WO02099531A2

公开(公告)日：2002-12-12

申请号：PCT/US0215694

申请日：2002-05-14

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  LAMB JAMES E III ,  FLAIM TONY D ,  HUANG RUNHUI ,  SHAO XIE

IPC: H01L21/312 ,  G03F7/09 ,  G03F

CPC classification number: G03F7/091 ,  Y10S438/952 ,  Y10T428/31511 ,  Y10T428/31525

Abstract: Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Abstract translation: 提供抗反射组合物和使用具有低介电常数材料的那些组合物的方法。 在一个实施方案中，组合物包括包含具有未反应的环氧基团的重复单体的聚合物。 在另一个实施方案中，聚合物还包含包含与光衰减化合物反应以便打开环的环氧化物环的重复单体。 组合物可以施加到电介质层，以便在双镶嵌工艺期间最小化或防止反射，同时阻挡当将有机抗反射涂层施加到低介电常数层时通常发生的通孔或光致抗蚀剂中毒。

公开(公告)号：EP2174189A4

公开(公告)日：2011-01-19

申请号：EP08796726

申请日：2008-07-28

Applicant: BREWER SCIENCE INC

Inventor： SULLIVAN DANIEL M ,  HUANG RUNHUI ,  NEEF CHARLES J ,  DAI JINHUA ,  SWOPE MICHAEL B

IPC: G03F7/11 ,  C08F212/04 ,  C08F220/10 ,  C08F236/06 ,  G03F7/16

CPC classification number: G03F7/091 ,  C08F212/14 ,  C08F220/14 ,  C08F220/18 ,  C08F220/26 ,  C08F220/34 ,  C08F220/56 ,  C08F226/06 ,  G03F7/11 ,  Y10T428/31678 ,  Y10T428/31855 ,  Y10T428/31935

Abstract: This invention describes compositions and methods of using non-covalently crosslinked resin coatings for lithographic applications. These materials are designed to undergo, after coating, a change that provides solvent resistance and, with some materials, simultaneous aqueous-base solubility. Non-covalent interactions allow for easier removal of these coatings than of covalently crosslinked materials. These types of materials are well-suited for trench and gap fill applications, as well as for anti-reflective coatings, spin-on carbon layers, and etch masks.

公开(公告)号：EP1284829A4

公开(公告)日：2003-07-02

申请号：EP00961646

申请日：2000-09-06

Applicant: BREWER SCIENCE INC

Inventor： PULIGADDA RAMA ,  HUANG RUNHUI

IPC: B05D1/40 ,  B05D7/24 ,  C08L61/28 ,  C09D5/32 ,  C09D101/00 ,  C09D133/02 ,  C09D167/00 ,  C09D179/06 ,  G02B1/11

CPC classification number: G02B1/111 ,  C08L61/28 ,  Y10T428/31504 ,  Y10T428/31667 ,  Y10T428/31862 ,  Y10T428/31942

Abstract: Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., -CH2-, -CH2-O-CH2-) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values and can be formulated for both conformal and planar applications.