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公开(公告)号:FR2591388A1
公开(公告)日:1987-06-12
申请号:FR8617074
申请日:1986-12-05
Applicant: CANON KK
Inventor: ITABASHI SATOSHI , TATSUMI SHOJI , FUKAYA MASAKI
IPC: H01L27/14 , H01L27/146 , H01L31/0248 , H01L31/0392 , H01L31/08 , H01L31/09 , H01L29/06 , H01L29/227
Abstract: A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.
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公开(公告)号:DE3504369A1
公开(公告)日:1985-08-14
申请号:DE3504369
申请日:1985-02-08
Applicant: CANON KK
Inventor: FUKAYA MASAKI , FURUSHIMA TERUHIKO , MASAKI YUICHI , KAKIMOTO SEIJI
IPC: G01J1/02 , H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/0248 , H01L31/0264 , H01L31/09 , H01L31/10 , H01L31/20 , H01L31/18 , H01L31/08
Abstract: A description is given of a method for producing a photosensor having electrodes which are constructed on an optically conductive layer over the intervening ohmic contact layer, it being the case that an ohmic contact layer is produced on an optically conductive layer, electrodes having a desired configuration are constructed on the ohmic contact layer, thereafter the ohmic contact layer on the exposed region is removed by an etching process for the purpose of photoelectric conversion, and subsequently heat treatment is carried out, as a result of which a photosensor arrangement is produced.
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公开(公告)号:DE3500645A1
公开(公告)日:1985-07-18
申请号:DE3500645
申请日:1985-01-10
Applicant: CANON KK
Inventor: FURUSHIMA TERUHIKO , MASAKI YUICHI , FUKAYA MASAKI , SEKIMURA NOBUYUKI
IPC: H01L21/443 , H01L27/146 , H01L31/0224 , H01L31/09 , H01L27/14 , H04N1/028
Abstract: A photosensor array comprises a substrate, a photoconductive layer and electrode layers between which the photoconductive layer is provided, wherein an opaque electroconductive layer is provided at a side opposite to a side to which a signal light is projected, and an insulating layer intervenes between the opaque electroconductive layer and the combination of the electrodes and the photoconductive layer. In a photosensor array of a matrix driving type using a multilayer wiring, an insulating layer between electrodes at the multilayer wiring portion and a protective insulating layer at a photoelectric transducer portion are continuously formed by using the same material.
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公开(公告)号:DE3423159A1
公开(公告)日:1985-01-03
申请号:DE3423159
申请日:1984-06-22
Applicant: CANON KK
Inventor: SEKIMURA NOBUYUKI , FUKAYA MASAKI , NAKAGAWA KATSUMI , KOMATSU TOSHIYUKI , SHOJI TATSUMI , FURUSHIMA TERUHIKO
IPC: H01L31/0392 , H01L31/09 , H01L31/10 , H01L31/18 , H04N1/028
Abstract: A photosensor comprises a glass substrate, a photoelectric converting layer comprising a silicon-based amorphous material, and a pair of electrode layers in electrical contact with the photoelectric converting layer, wherein one or both sides of the glass substrate are covered with dielectric layers and the photoelectric converting layer is formed upon the dielectric layer.
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公开(公告)号:DE2951834A1
公开(公告)日:1980-07-17
申请号:DE2951834
申请日:1979-12-21
Applicant: CANON KK
Inventor: SUGATA MASAO , FUKAYA MASAKI , KAWASAKI KANAGAWA , NAKAGIRI TAKASHI , YAMAGATA TAKAAKI , HIRAI YUTAKA
IPC: G03G5/08 , C23C16/509 , G03G5/082 , G03G5/10 , H01L31/0248 , H01L31/09 , H01L31/20 , H01L31/04 , H01L31/08 , H01L31/14
Abstract: The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880+/-10 cm-1 (intensity of this peak being referred to as IA) and a peak at 970+/-10 cm-1 (intensity of this peak being referred to as IB) in the infrared spectrum, the ratio IA/IB, being not more than 1.0.
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公开(公告)号:DE3751242D1
公开(公告)日:1995-05-24
申请号:DE3751242
申请日:1987-01-22
Applicant: CANON KK
Inventor: FUKAYA MASAKI , KAWAKAMI SOICHIRO , ITABASHI SATOSHI , TERADA KATSUNORI , GOFUKU IHACHIRO , NAKAGAWA KATSUMI , HATANAKA KATSUNORI , ISOBE YOSHINORI , SAIKA TOSHIHIRO C O CANON DAIN , KANEKO TETSUYA , KITAHARA NOBUKO , SUZUKI HIDEYUKI
IPC: H01L27/146 , H01L27/14
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公开(公告)号:DE3789846T2
公开(公告)日:1994-09-22
申请号:DE3789846
申请日:1987-10-06
Applicant: CANON KK
Inventor: KOMIYAMA KATSUMI , FUKAYA MASAKI , YOKONO KOJIRO , TOMA HITOSHI
IPC: H01L27/146 , H04N1/031 , H04N1/00 , H01L27/14 , H01L31/02
Abstract: An image reading device has an entrance window provided in a substrate and receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer (129) of a first function at the side of photosensor, and a second layer (130) of another function different from the first function.
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公开(公告)号:DE3587805T2
公开(公告)日:1994-08-25
申请号:DE3587805
申请日:1985-10-03
Applicant: CANON KK
Inventor: FUKAYA MASAKI , KOMATSU TOSHIYUKI , SHOJI TATSUMI , KAMIO MASARU , SEKIMURA NOBUYUKI
Abstract: A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6.328 A in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.
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公开(公告)号:GB2176052B
公开(公告)日:1990-01-10
申请号:GB8609295
申请日:1986-04-16
Applicant: CANON KK
Inventor: KOMATSU TOSHIYUKI , FUKAYA MASAKI , ITABASHI SATOSHI
IPC: H01L27/146 , H01L27/14 , H01L31/0248 , H01L31/08 , H01L31/09 , H01L31/20
Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.
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公开(公告)号:GB2175478B
公开(公告)日:1989-02-01
申请号:GB8608824
申请日:1986-04-11
Applicant: CANON KK
Inventor: HATANAKA KATSUNORI , NAKAGAWA KATSUMI , FUKAYA MASAKI , KAWAKAMI SOICHIRO
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