公开(公告)号：US20150357208A1

公开(公告)日：2015-12-10

申请号：US14730584

申请日：2015-06-04

Applicant: EBARA CORPORATION

Inventor： Fujihiko TOYOMASU ,  Toru MARUYAMA ,  Junji KUNISAWA

IPC: H01L21/67 ,  B01F3/08 ,  B01F15/00

CPC classification number: H01L21/67051 ,  B01F3/088 ,  H01L21/67017

Abstract: A cleaning chemical supplying device, a cleaning chemical supplying method, and a cleaning unit capable of flexibly handling a change of a dilution ratio and suppression of an increase of a device size are provided.A cleaning chemical supplying device has a first in-line mixer 72 for supplying a first cleaning chemical to a cleaning device 200, a second in-line mixer 73 for supplying a second cleaning chemical to the substrate cleaning device 200, a first chemical CLC box 120 for controlling a flow rate of the first chemical supplied to the first in-line mixer 72, a second chemical CLC box 130 for controlling a flow rate of the second chemical supplied to the second in-line mixer 73, and a DIWCLC box 110 for controlling a flow rate of dilution water supplied to the first in-line mixer 72 or the second in-line mixer 73 and is configured such that a supply destination of the dilution water is switched from the first in-line mixer 72 to the second in-line mixer 73 or from the second in-line mixer 73 to the first in-line mixer 72.

Abstract translation: 提供一种清洁化学品供给装置，清洁化学品供应方法和能够灵活地处理稀释比的变化并抑制装置尺寸增加的清洁单元。 清洗化学品供给装置具有用于将第一清洁化学品供给到清洁装置200的第一在线混合器72，用于向基板清洗装置200供给第二清洗化学品的第二在线混合器73，第一化学CLC箱 120，用于控制供应到第一在线混合器72的第一化学品的流量;第二化学CLC箱130，用于控制供应到第二在线混合器73的第二化学品的流量;以及DIWCLC箱110 用于控制供应到第一在线混合器72或第二在线混合器73的稀释水的流量，并且构造成使得稀释水的供应目的地从第一在线混合器72切换到第二在线混合器72。 在线混频器73或从第二在线混频器73到第一在线混频器72。

公开(公告)号：US20150079881A1

公开(公告)日：2015-03-19

申请号：US14465792

申请日：2014-08-21

Applicant: EBARA CORPORATION

Inventor： Toru MARUYAMA ,  Hisanori MATSUO ,  Yasuyuki MOTOSHIMA

IPC: B24B37/015 ,  G01J5/02 ,  B24B49/14

CPC classification number: B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  G01J5/025 ,  G01J2005/0085

Abstract: A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

Abstract translation: 公开了一种抛光方法和抛光装置，其可以通过调整抛光垫的表面温度来提高抛光速率并且可以控制待抛光的基板的抛光轮廓。 通过将基板压在研磨台上的抛光垫上来研磨基板的抛光方法包括调整抛光垫的表面温度的焊盘温度调节步骤和通过将衬底压在抛光物上来研磨衬底的抛光步骤 垫具有调整的表面温度。 在焊盘温度调节步骤中，在抛光步骤期间调整研磨垫的与衬底接触的区域的一部分区域的表面温度，使得温度曲线的温度变化率 在抛光垫的表面的径向上在抛光垫的径向方向上变得恒定。

公开(公告)号：US20230356267A1

公开(公告)日：2023-11-09

申请号：US18351911

申请日：2023-07-13

Applicant: Ebara Corporation

Inventor： Shuji UOZUMI ,  Toru MARUYAMA ,  Yasuyuki MOTOSHIMA

IPC: B08B3/04 ,  B08B1/00 ,  H01L21/67 ,  B08B1/04

CPC classification number: B08B3/04 ,  B08B1/007 ,  H01L21/67046 ,  H01L21/67051 ,  B08B1/04 ,  B24B37/345

Abstract: In one embodiment of the present invention, a cleaning member 90 is attached to the surface of a cleaning member attaching part 10. The cleaning member attaching part 10 has a main body 20, a cleaning liquid introduction part 30 extending inside the main body 20, and a plurality of cleaning liquid supply holes 40 communicating with the cleaning liquid introduction part 30. The cleaning liquid introduction part 30 is configured such that cleaning liquid flows in from a first end part 11 side, and an area proportion of the cleaning liquid supply holes 40 in a second region located on a second end part 12 side opposite to the first end part 11 to a surface of the main body 20 is larger than the area proportion of the cleaning liquid supply holes 40 in a first region located on the first end part 11 side to the surface of the main body 20.

公开(公告)号：US20200276619A1

公开(公告)日：2020-09-03

申请号：US16750859

申请日：2020-01-23

Applicant: Ebara Corporation

Inventor： Shuji UOZUMI ,  Toru MARUYAMA ,  Yasuyuki MOTOSHIMA

IPC: B08B3/04 ,  B08B1/00 ,  B08B1/04 ,  H01L21/67

Abstract: In one embodiment of the present invention, a cleaning member 90 is attached to the surface of a cleaning member attaching part 10. The cleaning member attaching part 10 has a main body 20, a cleaning liquid introduction part 30 extending inside the main body 20, and a plurality of cleaning liquid supply holes 40 communicating with the cleaning liquid introduction part 30. The cleaning liquid introduction part 30 is configured such that cleaning liquid flows in from a first end part 11 side, and an area proportion of the cleaning liquid supply holes 40 in a second region located on a second end part 12 side opposite to the first end part 11 to a surface of the main body 20 is larger than the area proportion of the cleaning liquid supply holes 40 in a first region located on the first end part 11 side to the surface of the main body 20.

公开(公告)号：US20180304434A1

公开(公告)日：2018-10-25

申请号：US15951745

申请日：2018-04-12

Applicant: Ebara Corporation

Inventor： Suguru SAKUGAWA ,  Nobuyuki TAKAHASHI ,  Toru MARUYAMA

IPC: B24B37/005 ,  B24B49/10 ,  H01L21/67 ,  H01L21/683

CPC classification number: B24B37/005 ,  B24B37/10 ,  B24B37/32 ,  B24B49/00 ,  B24B49/08 ,  B24B49/10 ,  G01M3/26 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/6838

Abstract: A leak checking method which is capable of detecting a leak of compressed gas supplied to a polishing head without removing the polishing head from a polishing apparatus is disclosed. The leak checking method includes: supplying a compressed gas into a pressure chamber, which is formed by a membrane of a polishing head, with the membrane placed in contact with a stationary surface; measuring a flow rate of the compressed gas during supplying of the compressed gas into the pressure chamber, while regulating a pressure of the compressed gas by use of a pressure regulator; deciding whether or not the flow rate measured when a variation in the pressure of the compressed gas is within an allowable range of variation, is within a reference range; and generating a leak-detection signal when the flow rate is outside of the reference range.

公开(公告)号：US20180021917A1

公开(公告)日：2018-01-25

申请号：US15697047

申请日：2017-09-06

Applicant: EBARA CORPORATION

Inventor： Toru MARUYAMA ,  Hisanori MATSUO ,  Yasuyuki MOTOSHIMA

IPC: B24B37/015 ,  B24B49/14 ,  G01J5/02 ,  G01J5/00

CPC classification number: B24B37/015 ,  B24B49/14 ,  B24B55/02 ,  G01J5/025 ,  G01J2005/0085

Abstract: A polishing method and a polishing apparatus which can increase a polishing rate and can control a polishing profile of a substrate being polished by adjusting a surface temperature of a polishing pad are disclosed. The polishing method for polishing a substrate by pressing the substrate against a polishing pad on a polishing table includes a pad temperature adjustment step of adjusting a surface temperature of the polishing pad, and a polishing step of polishing the substrate by pressing the substrate against the polishing pad having the adjusted surface temperature. In the pad temperature adjustment step, the surface temperature of a part of an area of the polishing pad, the area being to be brought in contact with the substrate, is adjusted during the polishing step so that the rate of temperature change of a temperature profile in a radial direction of the surface of the polishing pad becomes constant in the radial direction of the polishing pad.

公开(公告)号：US20180001438A1

公开(公告)日：2018-01-04

申请号：US15636343

申请日：2017-06-28

Applicant: EBARA CORPORATION

Inventor： Suguru SAKUGAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI ,  Zhongxin WEN ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Itsuki KOBATA ,  Tomohiko TAKEUCHI

IPC: B24B37/005 ,  H01L21/306 ,  B24B37/10

CPC classification number: B24B37/005 ,  B24B37/10 ,  H01L21/30625

Abstract: According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface.

公开(公告)号：US20170047237A1

公开(公告)日：2017-02-16

申请号：US15305088

申请日：2015-04-17

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Keita YAGI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI

IPC: H01L21/677 ,  H01L21/3105 ,  B24B37/20 ,  H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/321

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method.The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract translation: 本发明提供了一种用于在处理液体存在下使基板和催化剂彼此接触来研磨基板的加工对象区域的基板处理装置。 基板处理装置包括：基板保持单元，其被构造成保持基板;催化剂保持单元，其构造成保持催化剂;以及驱动单元，被配置为使所述基板保持单元和所述催化剂保持单元相对于所述处理对象区域移动 的基底和催化剂保持彼此接触。 催化剂小于底物。

公开(公告)号：US20150224620A1

公开(公告)日：2015-08-13

申请号：US14590620

申请日：2015-01-06

Applicant: EBARA CORPORATION

Inventor： Nobuyuki TAKAHASHI ,  Toru MARUYAMA ,  Suguru SAKUGAWA

IPC: B24B37/005 ,  B24B7/22

CPC classification number: B24B37/005 ,  B24B7/228 ,  B24B37/30 ,  B24B49/08 ,  Y10T137/7761

Abstract: A pressure regulator capable of improving both stability of pressure and responsiveness to an input signal is disclosed. A PID controller is configured to stop producing a corrective command value from a point in time when a pressure command value has changed until a PID control starting point and to produce the corrective command value after the PID control starting point. A regulator controller is configured to control operation of a pressure regulation valve so as to eliminate a difference between the pressure command value and a first pressure value from the point in time when the pressure command value has changed until the PID control starting point, and to control the operation of the pressure regulation valve so as to eliminate a difference between the corrective command value and the first pressure value after the PID control starting point.

Abstract translation: 公开了能够提高压力稳定性和对输入信号的响应性的压力调节器。 PID控制器被配置为从压力指令值改变直到PID控制起始点的时间点停止产生校正指令值，并且在PID控制起点之后产生校正指令值。 调节器控制器被配置为控制压力调节阀的操作，以便从压力指令值已经改变到PID控制起始点的时间点消除压力指令值与第一压力值之间的差值，并且 控制压力调节阀的运行，以消除PID控制起点后的校正指令值与第一压力值之间的差异。

公开(公告)号：US20140216505A1

公开(公告)日：2014-08-07

申请号：US14080685

申请日：2013-11-14

Applicant: EBARA CORPORATION

Inventor： Fujihiko TOYOMASU ,  Toru MARUYAMA ,  Mitsunori KOMATSU

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/67051

Abstract: A substrate cleaning apparatus includes: a pure water supply line provided with a pure water flow regulator and a pure water supply valve; chemical supply lines each provided with a chemical flow regulator and a chemical supply valve; a merging line where pure water and a plurality of liquid chemicals meet to form a cleaning liquid; a cleaning liquid supply line configured to supply the cleaning liquid to a substrate; and a controller configured to control the pure water flow regulator, the pure water supply valve, the chemical flow regulators, and the chemical supply valves such that the pure water and the plurality of liquid chemicals are present at a predetermined ratio at a meeting point.

Abstract translation: 基板清洗装置包括：纯水供给管线，设有纯水流量调节器和纯净水供给阀; 化学品供应管路各设有化学流量调节器和化学品供应阀门; 合并线，其中纯水和多种液体化学品相遇以形成清洁液体; 清洗液供给管线，构成为将清洗液供给到基板; 以及控制器，其被配置为控制纯水流量调节器，纯净水供应阀，化学流量调节器和化学品供应阀，使得纯水和多个液体化学品在一个会合点处以预定比率存在。