公开(公告)号：US09735312B2

公开(公告)日：2017-08-15

申请号：US14442319

申请日：2013-07-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/02 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22 ,  H01L21/00

CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

公开(公告)号：US09685588B2

公开(公告)日：2017-06-20

申请号：US15083743

申请日：2016-03-29

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

公开(公告)号：US09331247B2

公开(公告)日：2016-05-03

申请号：US14286685

申请日：2014-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract translation: 发光元件包括反射层; 在反射层上的第一透明层; 在所述第一透明层上具有活性层的发光层; 以及形成在第一透明层中的空腔。

公开(公告)号：US20140014994A1

公开(公告)日：2014-01-16

申请号：US13932661

申请日：2013-07-01

Applicant: Epistar Corporation

Inventor： Shih-I Chen ,  CHIA-LIANG HSU ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang ,  Ching-Pei Lin

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。