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    Thermal management assembly for e.g. fuel cells, comprises heat sink including graphite layer (exhibiting thermal conductivity, which is anisotropic in nature) obtained by cleaving graphene layer from graphite sheet, and support layer
    21.
    发明专利
    Thermal management assembly for e.g. fuel cells, comprises heat sink including graphite layer (exhibiting thermal conductivity, which is anisotropic in nature) obtained by cleaving graphene layer from graphite sheet, and support layer 未知

    公开(公告)号：DE102006056816A1

    公开(公告)日：2007-10-04

    申请号：DE102006056816

    申请日：2006-12-01

    Applicant: GEN ELECTRIC

    Inventor： SAYIR HALUK ,  MEHMET ARIK ,  COOPER EVAN B ,  ICOZ TUNC ,  SCHAEPKENS MARC ,  LIU XIANG

    IPC: F28F21/00 ,  F28F13/18 ,  F28F21/02 ,  G06F1/20 ,  H01L23/36 ,  H05K7/20

    Abstract: A thermal management assembly comprises a heat sink including a graphite layer having a first surface, a second surface, and a thickness comprising a graphene layer, where graphite layer is obtained by cleaving a graphene layer from a graphite sheet, where graphite layer exhibits a thermal conductivity, which is anisotropic in nature and is greater than 500 W/m[deg]C in a plane(s); and a support layer comprising a metal, a polymeric resin, and/or a ceramic disposed on a surface(s) of the graphite layer. A thermal management assembly comprises a base thermally coupled to the heat generating device; and a heat sink thermally coupled to the base. The heat sink comprises a graphite layer having a first surface, a second surface, and a thickness comprising a graphene layer, where graphite layer is obtained by cleaving a graphene layer from a graphite sheet, where graphite layer exhibits a thermal conductivity, which is anisotropic in nature and is greater than 500 W/m[deg]C in a plane(s); and a support layer, which comprises a metal, a polymeric resin, and/or a ceramic, the support layer is disposed on a surface(s) of the graphite layer by a process consisting coating, brushing, spraying, spreading, dipping, laminating, or powder coating. Before the support layer is disposed on the graphite layer, the graphite layer is treated by plasma etching, ion etching, and/or chemical etching. The support layer comprises parylene, and formed by applying parylene onto a surface of the graphite layer, where parylene is applied onto the surface by brushing, dipping, spraying, or a chemical vapor deposition process. It comprises a metal foil backed by a thermally conductive adhesive layer. Independent claims are also included for: (1) a heat dissipating fin (14) for use in thermal management assemblies, the fin comprising a graphite layer; (2) a cooling system; and (3) a method for constructing a thermal management system.

    25.
    发明专利
    未知

    公开(公告)号：AT441065T

    公开(公告)日：2009-09-15

    申请号：AT03256496

    申请日：2003-10-15

    Applicant: GEN ELECTRIC

    Inventor： SHIANG JOSEPH JOHN ,  SCHAEPKENS MARC ,  TURNER LARRY GENE

    IPC: F21V15/01 ,  H01L51/50 ,  F21V7/22 ,  F21V13/02 ,  F21Y105/00 ,  H01L51/00 ,  H01L51/52

    Abstract: A shaped light extraction luminaire (28) to gather light from an organic light emitting diode (OLED). Specifically, an inverted and truncated pyramid structure having a recessed area configured to receive an OLED is provided. The luminaire (28) is structured to increase the light emission of the OLED by capturing light emissions that would typically be lost by absorption within the OLED (10). The luminaire (28) includes angled sides (34) having a reflective material (36) disposed thereon. The luminaire (28) increases the light output of the OLED (10) such that it may be implemented in area lighting applications. Further, an array comprising a plurality of recessed areas and a plurality of angled sides (34) for each of the recessed areas may be implemented.

    Heater for regulating/controlling surface temperature of substrate e.g. mold for glass lens, comprises a thermal pyrolytic layer in base support for providing specific maximum temperature variation, and having specific thermal conductivity
    26.
    发明专利
    Heater for regulating/controlling surface temperature of substrate e.g. mold for glass lens, comprises a thermal pyrolytic layer in base support for providing specific maximum temperature variation, and having specific thermal conductivity 未知

    公开(公告)号：DE102006056812A1

    公开(公告)日：2008-03-27

    申请号：DE102006056812

    申请日：2006-12-01

    Applicant: GEN ELECTRIC

    Inventor： MARINER JOHN THOMAS ,  SANE AJIT ,  EBATA TOSHIKI ,  SCHAEPKENS MARC ,  LIU XIANG ,  FAN WEI

    IPC: H01L21/68

    Abstract: An apparatus for supporting a substrate (W) in a process chamber and regulating surface temperature of substrate comprises a base support having a surface to support substrate; a heating element (33) for heating the substrate to at least 300[deg] C; and at least one layer (600) of thermal pyrolytic graphite material embedded in base support, and having a thermal conductivity of at least 1000 W/m[deg] C in a plane parallel to substrate. The surface of the support has a maximum temperature variation of 10[deg] C between lowest point and a highest temperature point on surface of the support. An apparatus for supporting a wafer substrate (W) in a semiconductor process chamber, comprises a base substrate (10) containing bulk graphite, where the graphite base substrate has a top surface and a bottom surface facing away from the wafer supported on the apparatus; a first coating layer for coating the graphite base substrate; at least one layer (600) of thermal pyrolytic graphite (TPG) disposed on the first coating layer or disposed between the graphite base substrate and the first coating layer; a heating element (33) for heating the substrate to at least 300[deg] C and is disposed on the bottom surface of the coated graphite base substrate; an over-coating layer (300) for coating the base support; The coating layer comprises an electrically insulating material selected from one of an oxide, nitride, oxynitride of elements selected from aluminum (Al), boron (B), silicon (Si), gallium (Ga), refractory hard metals and/or transition metals. The over-coating layer comprises one of nitride, carbide, carbonitride, oxynitride of elements selected from B, Al, Si, Ga, yttrium, refractory hard metals, and/or transition metals; a zirconium phosphate having an sodium zirconium phosphate (NZP) structure of NaZr 2(PO 4) 3; a glass-ceramic composition containing at least one element selected from elements of the Group 2a, Group 3a and Group 4a; a barium oxide-alumina-boric oxide-silica (BaO-Al 2O 3-B 2O 3-SiO 2) glass; and a mixture of SiO 2 and a plasma-resistant material comprising an oxide or fluoride of yttrium (Y), scandium (Sc), lanthanum (La), cerium (Ce), gadolinium (Gd), europium (Eu), dysprosium (Dy) and yttrium-aluminum-garnet (YAG). The wafer supported by the apparatus has a maximum temperature variation of 10[deg] C between a lowest point and a highest temperature point on the wafer. The wafer substrate surface has a maximum temperature variation of 2[deg] C. The TPG layer has a thickness of 0.5-15 mm, and a thickness variation of less than 0.005 mm. The apparatus further comprises a susceptor disposed on the base support.

    30.
    发明专利
    未知

    公开(公告)号：BR0316331A

    公开(公告)日：2005-09-27

    申请号：BR0316331

    申请日：2003-11-20

    Applicant: GEN ELECTRIC

    Inventor： CHISHOLM BRET ,  OLCZAK EUGENE ,  SCHAEPKENS MARC ,  COYLE DENNIS

    IPC: F21V8/00 ,  G02B1/11 ,  G02B5/20 ,  G02B5/28 ,  G02B5/30 ,  G02F1/13357 ,  G02F1/1335

    Abstract: There is provided an optical structure. The optical structure includes a light source (14). The optical structure also includes an organic light management film (16) having an index of refraction of less than 1.7 disposed above the light source, and a transparent inorganic film (18) having an index of refraction of greater than 1.7 disposed adjacent the organic light management film (16). A optical device is also provided including the organic light management film (16) and the transparent inorganic film (18). A method of forming the optical structure is also provided. The method includes depositing the transparent inorganic film (18) under vacuum.

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