Abstract:
PURPOSE:To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof. CONSTITUTION:The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.
Abstract:
PURPOSE:To prevent degradation in the yield of products and to facilitate process control by providing a thin film for reinforcing the adhesion of a light shielding film to a resist by a metal silicide contg. oxygen on a light shieldable thin film consisting of the metal silicide. CONSTITUTION:The light shieldable thin film 3 consisting of the metal silicide is formed on one face of a transparent substrate 2 consisting of quartz glass and the thin film 4 for reinforcing the adhesion consisting of the metal silicide contg. oxygen is provided on this light shieldable thin film 3. The thin film 4 for reinforcing the adhesion has the compsn. resembling to the compsn. of the light shieldable thin film 3 and is formable by the thin film forming technique similar to the case of the light shieldable thin film 3. Said thin film is, therefore, easily formed as the extension of he stage for forming the light shieldable thin film. A photoresist film is satisfactorily adhered onto the light shieldable thin film of the photomask blank 1 even if an adhesion accelerator is not coated thereon. The degradation in the yield of the products is thus prevented.
Abstract:
PROBLEM TO BE SOLVED: To provide a mask blank and a photomask capable of avoiding the problems that may occur, when a light-shielding film and light-translucent film close to each other are exposed to an etching liquid. SOLUTION: A light-translucent film that partially transmits exposure light and a light-shielding film that blocks exposure light are provided, in a random order, on a transparent substrate and a light-transmitting part that transmits exposure light; a light-translucent part that partially transmits exposure light and a light-shielding part that blocks exposure light are formed, by respectively patterning the light-translucent film and the light-shielding film, wherein the light-translucent film and the light-shielding film are each made of a conductive material; and an insulating film made of a non-conductive material is provided between the light-translucent film and the light-shielding film. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a large mask and a mask blank for FPD suitable for multicolor exposure. SOLUTION: The mask blank for manufacturing an FPD device includes at least a semi-translucent film for gray tone mask having the function of adjusting transmission amount, which is provided on a translucent substrate. The semi-translucent film for gray tone mask is a film regulated so that, in a wavelength range at least from i line to g line radiated from an ultrahigh pressure mercury lamp, the transmittance (that is, semi-transmittance) fluctuation range of the semi-translucent film is within less than 5%. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a gray tone mask capable of suppressing the occurrence of electrostatic damages in a pattern during handling when the mask is used. SOLUTION: The gray tone mask has a mask pattern on a transparent substrate, the mask pattern comprising a light-shielding part, a light-transmitting part and a light-semitransmitting part that reduces a predetermined amount of the transmitted amount of exposure light used upon using the mask, and the gray tone mask is used for forming a desired transfer pattern including segments with different residual film values on a transfer object by selectively decreasing dose of exposure light on the transfer object in accordance with regions. A conductive film is formed on the whole surface of the transparent substrate, on which the mask pattern is formed and the light-shielding part or the light-semitransmitting part of each mask pattern in a region where at least the mask pattern is formed within the substrate plane is electrically equipotential through the conductive film. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a gray tone mask blank and a gray tone mask, particularly a gray tone mask using a light-semitransmitting film, with which a desired pattern can be obtained on a transfer object upon forming a precise pattern. SOLUTION: This invention relates to the gray tone mask blank to be used for manufacturing a gray tone mask for forming a desired transfer pattern including segments with different residual film values on a transfer object body by selectively decreasing the dose of exposure light to the transfer object depending on the exposure region, wherein the gray tone mask blank includes a light-semitransmitting film and a light-shielding film on a transparent substrate, with the light-semitransmitting film showing ≤4.0% dispersion (change rate) of the transmittance for the exposure light in a region where at least the mask pattern is formed within the substrate plane. By subjecting the mask blank to predetermined patterning, a light-shielding part, a light-transmitting part and a light-semitransmitting part are formed to obtain a gray tone mask. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gray tone mask by which variance in CD (line width) during producing a gray tone mask can be decreased, and to provide a gray tone mask. SOLUTION: A gray tone mask is obtained by preparing a gray tone mask blank having a light-semitransmitting film and a light-shielding film in this order on a transparent substrate, subjecting the mask blank to first patterning, forming a resist film on the whole substrate surface including the patterned light-shielding film and the bare light-semitransmitting film, and then subjecting the blank to second patterning to form the respective patterns in the light-semitransmitting film and the light-shielding film. The difference between the surface reflectance of the light-shielding film for the drawing light in the first patterning and the surface reflectance of the light-semitransmitting film for the drawing light in the second patterning is adjusted to be ≤35%. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for processes (such as a resist coating method, an etching method and a cleaning method) in a large mask for an FDP (flat panel display). SOLUTION: The mask blank for manufacturing an FPD device includes at least one of a light shielding film, and a semitransmitting film having a function of controlling the transmitted light quantity on a light transmitting substrate, wherein the light shielding film and the semitransmitting film show a square root average roughness Rq of 2.0 nm or less on the film surface. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank and a halftone phase shift mask having superior light resistance and chemical resistance and favorable production yield of a mask, without causing changes in transmittance or changes in a phase angle even when the wavelength of exposure light is as short as 200 nm or shorter. SOLUTION: The halftone phase shift mask blank 10 has a semi-transparent film 2, having a predetermined transmittance at the wavelength of exposure light, with mainly nitrogen, metal and silicon as the constituents, formed on a transparent substrate 1, wherein the surface layer of the semi-transparent film 2 has ≤15 atm% oxygen content, the surface layer of the semi-transparent film 2 has ≤5 atm% metal content, and the film thickness of the surface layer is ≥1 nm. The semi-transparent film 2 is patterned to obtain the halftone phase shift mask 20 having a semi-transparent portion 2a formed in the film. COPYRIGHT: (C)2006,JPO&NCIPI