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公开(公告)号：DE69307833T2
公开(公告)日：1997-07-24
申请号：DE69307833
申请日：1993-11-03
Applicant: IBM
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公开(公告)号：BRPI0215706B1
公开(公告)日：2016-01-19
申请号：BR0215706
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C11/16 , G11C7/04 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: "dispositivo de armazenamento de memória com elemento de aquecimento". um dispositivo de armazenamento de memória é provido, que inclui uma célula de armazenamento que tem uma região magnética mutável. a região magnética mutável (20) inclui um material tendo um estado de magnetização que responde a uma mudança de temperatura. o dispositivo de armazenamento de memória também inclui um elemento de aquecimento. o elemento de aquecimento está próximo da célula de armazenamento para mudança seletiva da temperatura da região magnética mutável da referida célula de armazenamento. pelo aquecimento da célula de armazenamento (50) através do elemento de aquecimento, em oposição ao aquecimento da célula de armazenamento pela aplicação direta de corrente a ela, é provida mais flexibilidade na fabricação das células de armazenamento.
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公开(公告)号：DE69924655T2
公开(公告)日：2006-01-19
申请号：DE69924655
申请日：1999-02-04
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.
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Patent Agency Ranking
公开(公告)号：DE69924655D1
公开(公告)日：2005-05-19
申请号：DE69924655
申请日：1999-02-04
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.
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公开(公告)号：DE69923244D1
公开(公告)日：2005-02-24
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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公开(公告)号：BR0215706A
公开(公告)日：2005-02-22
申请号：BR0215706
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：AU2002356961A1
公开(公告)日：2003-11-10
申请号：AU2002356961
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：CA2481583A1
公开(公告)日：2003-11-06
申请号：CA2481583
申请日：2002-11-15
Applicant: IBM
Inventor： TROUILLOUD PHILIP LOUIS , ABRAHAM DAVID WILLIAM
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region (20) includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing th e temperature of the changeable magnetic region of said storage cell. By heati ng the storage cell (50) via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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