公开(公告)号：DE602005001401D1

公开(公告)日：2007-07-26

申请号：DE602005001401

申请日：2005-02-22

Applicant: IBM

Inventor： CHU JACK O ,  DEHLINGER GABRIEL K ,  GRILL ALFRED ,  KOESTER STEVEN J ,  OUYANG QIGING ,  SCHAUB JEREMY D

IPC: H01L31/101

Abstract: The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

公开(公告)号：DE102012213849A1

公开(公告)日：2013-02-28

申请号：DE102012213849

申请日：2012-08-06

Applicant: IBM

Inventor： CHENG CHENG-WEI ,  CHU JACK O ,  KIM JEEHWAN ,  SADANA DEVENDRA K ,  SHIU KUEN-TING

IPC: H01L31/18 ,  H01L31/0687

Abstract: Eine Einheit und ein Verfahren zur Herstellung einer Photovoltaikeinheit mit mehreren Grenzschichten beinhalten das Bereitstellen eines Trägersubstrats, das ein einkristallines Gruppe-III/V-Material enthält. Das Trägersubstrat bildet eine Gruppe-III/V-Zelle der Photovoltaikeinheit mit mehreren Grenzschichten. Auf dem Gruppe-III/V-Material wird eine Germaniumschicht mit passenden Gitterkonstanten epitaxial abgeschieden, um eine fertige Zelle der Photovoltaikeinheit mit mehreren Grenzschichten zu bilden. Die Germaniumschicht wird mit einem Fremdsubstrat verbunden.

公开(公告)号：DE60038793D1

公开(公告)日：2008-06-19

申请号：DE60038793

申请日：2000-03-11

Applicant: IBM

Inventor： CHU JACK O

IPC: H01L29/161 ,  H01L29/778 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L21/8232 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/095 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812

Abstract: A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and a channel structure of a compressively strained epitaxial Ge layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility for complementary MODFETs and MOSFETs. The invention overcomes the problem of a limited hole mobility due to alloy scattering for a p-channel device with only a single compressively strained SiGe channel layer. This invention further provides improvements in mobility and transconductance over deep submicron state-of-the art Si pMOSFETs in addition to having a broad temperature operation regime from above room temperature (425 K) down to cryogenic low temperatures (0.4 K) where at low temperatures even high device performances are achievable.

公开(公告)号：AU2003295647A8

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  CHRISTIANSEN SILKE H ,  CHU JACK O ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L21/302 ,  H01L21/461

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.

公开(公告)号：AU2003295647A1

公开(公告)日：2004-06-15

申请号：AU2003295647

申请日：2003-11-19

Applicant: IBM

Inventor： CHRISTIANSEN SILKE H ,  CHU JACK O ,  GRILL ALFRED ,  MOONEY PATRICIA M

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/762

Abstract: A method to obtain thin (less than 300 nm) strain-relaxed Si1-xGex buffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10 cm . The approach begins with the growth of a pseudomorphic or nearly pseudomorphic Si1-xGex layer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/Si1-xGex interface, parallel to the Si(001) surface.