公开(公告)号：FR2325961A1

公开(公告)日：1977-04-22

申请号：FR7623750

申请日：1976-07-28

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: C08F8/00 ,  C08F8/30 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  G03F1/02

Abstract: Positive resists are made using polymers and copolymers of methacrylic acid, methacrylic anhydride, methyl methacrylate, methacrylimide, and N-alkyl-methacrylimides which have been nitrated in up to about 10% of the monomer units on the methyl groups branching off the polymer chain. Inclusion of the nitro groups results in an increase of over an order of magnitude in the speed of development of images when the polymers are used as positive resists.

公开(公告)号：DE3780732T2

公开(公告)日：1993-03-11

申请号：DE3780732

申请日：1987-08-25

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: G03C1/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/11 ,  H01L21/027

公开(公告)号：DE3583308D1

公开(公告)日：1991-08-01

申请号：DE3583308

申请日：1985-04-11

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H05K3/00 ,  H01L21/31 ,  H01L21/00

公开(公告)号：DE3470965D1

公开(公告)日：1988-06-09

申请号：DE3470965

申请日：1984-05-21

Applicant: IBM

Inventor： HIRAOKA HIROYUKI ,  HOFER DONALD CLIFFORD ,  MILLER ROBERT DENNIS ,  PEDERSON LESTER ARLYN ,  WILLSON CARLTON GRANT

IPC: G03C5/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  H01L21/027 ,  G03F7/02

Abstract: An oxygen-reactive ion etch barrier (2) in a multi-layer resist structure (1, 2, 3) consists of polysilane having a molecular weight above 4000 and a glass transition temperature above 100 DEG C. As the polysilane is a positive acting resist which is particularly sensitive to wavelengths less than 375 nm, the resist structure need have only two layers if equipment is available to expose the polysilane layer to radiation of less than 375 nm wavelength.

公开(公告)号：AU1797876A

公开(公告)日：1978-04-06

申请号：AU1797876

申请日：1976-09-21

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/72 ,  C08F8/30 ,  C08J7/12

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：DE2647242A1

公开(公告)日：1977-05-12

申请号：DE2647242

申请日：1976-10-20

Applicant: IBM

Inventor： HIRAOKA HIROYUKI

IPC: G03G13/26 ,  G03F7/20 ,  G03G5/00 ,  G03G13/28 ,  H01J37/317 ,  H01L21/027 ,  G03F1/00

Abstract: An electro-lithography method suitable for forming a high resolution pattern in an electron sensitive resist material is disclosed. This technology permits the inexpensive high resolution reproduction of masks for use in integrated circuits and magnetic bubbles. The method involves the application of a pulsed, electric field to two parallel electrodes having an electron beam resist layer positioned on one of the electrodes and a mask positioned between the second electrode and the resist layer. The mask forms a gap having a thickness of 10-4m to 10-5m with the resist layer.