公开(公告)号：US6433115B2

公开(公告)日：2002-08-13

申请号：US81911901

申请日：2001-03-27

Applicant: IBM

Inventor： HAWKER CRAIG JON ,  KLAERNER GERRIT ,  LEE JEONG-IK ,  LEE VICTOR YEE-WAY ,  MILLER ROBERT DENNIS ,  SCOTT JOHN CAMPBELL

IPC: C08G61/02 ,  C08G61/12 ,  C08G73/02 ,  C08G73/06 ,  C08G73/08 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  C08F112/06

CPC classification number: C09K11/06 ,  C08G61/02 ,  C08G61/12 ,  C08G73/02 ,  C08G73/06 ,  C08G73/0627 ,  C08G73/0633 ,  C08G73/0688 ,  C08G73/0694 ,  C08G73/08 ,  H01L51/0039 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0052 ,  H01L51/5012

Abstract: Multifunctional electroactive copolymers are provided. The copolymers may be A-B-A triblock copolymers, brush-type graft copolymers, or variations thereof. In a preferred embodiment, the copolymers are "dual use" in that they comprise both a light emitting segment and a charge transport segment. Methods of synthesizing the novel electroactive copolymers are provided as well, as are opto-electronic devices, particularly LEDs, fabricated with the novel copolymers.

Abstract translation: 提供多功能电活性共聚物。 共聚物可以是A-B-A三嵌段共聚物，刷型接枝共聚物或其变体。 在优选的实施方案中，共聚物是“双重用途”，因为它们包括发光区段和电荷传输区段。 还提供了合成新的电活性共聚物的方法，以及用新型共聚物制造的光电子器件，特别是LED。

公开(公告)号：WO2007014882A2

公开(公告)日：2007-02-08

申请号：PCT/EP2006064640

申请日：2006-07-25

Applicant: IBM ,  IBM UK ,  HEDRICK JAMES LUPTON ,  MAGBITANG TEDDIE PEREGRINO ,  SANKARAPANDIAN MUTHUMANICKAM ,  VOLKSEN WILLI ,  KIM HO-CHEOL ,  LEE VICTOR YEE-WAY ,  MILLER ROBERT DENNIS ,  SUNDBERG LINDA KARIN ,  DUBOIS GERAUD JEAN-MICHEL

Inventor： HEDRICK JAMES LUPTON ,  MAGBITANG TEDDIE PEREGRINO ,  SANKARAPANDIAN MUTHUMANICKAM ,  VOLKSEN WILLI ,  KIM HO-CHEOL ,  LEE VICTOR YEE-WAY ,  MILLER ROBERT DENNIS ,  SUNDBERG LINDA KARIN ,  DUBOIS GERAUD JEAN-MICHEL

CPC classification number: C08L101/12 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

Abstract: A composition of matter and a structure fabricated using the composition. The composition comprising; a resin; polymeric nano-particles dispersed in the resin, each of the polymeric nano-particle comprising a multi-arm core polymer and pendent polymers attached to the multi-arm core polymer, the multi-arm core polymer immiscible with the resin and the pendent polymers miscible with the resin; and a solvent, the solvent volatile at a first temperature, the resin cross-linkable at a second temperature, the polymeric nano-particle decomposable at a third temperature, the third temperature higher than the second temperature, the second temperature higher than the first temperature, wherein a thickness of a layer of the composition shrinks by less than about 3.5% between heating the layer from the second temperature to the third temperature.

Abstract translation: 使用该组合物制造的物质组成和结构。 该组合物包含： 树脂; 分散在树脂中的聚合物纳米颗粒，每种聚合物纳米颗粒包含多臂芯聚合物和连接到多臂芯聚合物上的侧链聚合物，与树脂不混溶的多臂芯聚合物和可混溶的侧链聚合物 与树脂; 和溶剂，所述溶剂在第一温度下是挥发性的，所述树脂在第二温度下可交联，所述聚合物纳米颗粒可在第三温度下分解，所述第三温度高于所述第二温度，所述第二温度高于所述第一温度 其中在将所述层从所述第二温度加热到所述第三温度之间，所述组合物层的厚度收缩小于约3.5％。

公开(公告)号：WO2007096359A3

公开(公告)日：2008-01-10

申请号：PCT/EP2007051622

申请日：2007-02-20

Applicant: IBM ,  IBM UK ,  HEDRICK JAMES LUPTON ,  FROMMER JANE ELIZABETH ,  WINDELN JOHANNES ,  DUERIG URS ,  LEE VICTOR YEE-WAY ,  GOTSMANN BERND ,  MILLER ROBERT DENNIS ,  HAGBERG ERIK ,  MAGBITANG TEDDIE ,  KNOLL ARMIN ,  PRATT RUSSELL CLAYTON ,  WADE CHARLES

Inventor： HEDRICK JAMES LUPTON ,  FROMMER JANE ELIZABETH ,  WINDELN JOHANNES ,  DUERIG URS ,  LEE VICTOR YEE-WAY ,  GOTSMANN BERND ,  MILLER ROBERT DENNIS ,  HAGBERG ERIK ,  MAGBITANG TEDDIE ,  KNOLL ARMIN ,  PRATT RUSSELL CLAYTON ,  WADE CHARLES

IPC: C08G73/12 ,  G11B9/00

CPC classification number: G11B9/149 ,  B82Y10/00 ,  C08G73/101 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1053 ,  C08G73/1064 ,  G11B9/1409 ,  G11B9/1454 ,  G11B11/007 ,  G11B2005/0021 ,  Y10T428/265 ,  Y10T428/31721

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.

Abstract translation: 提出了一种用于设计用于纳米级热机械存储装置的聚合物层的方法。 交联聚酰亚胺低聚物用作原子力数据存储装置中的记录层，与先前报道的交联和线性聚合物相比，显着提高了性能。 可以调整聚酰亚胺低聚物的交联以匹配读写擦除周期中所需的热和强度参数。 另外，交联聚酰亚胺低聚物适用于纳米级成像。

公开(公告)号：DE112010003502T5

公开(公告)日：2013-03-14

申请号：DE112010003502

申请日：2010-08-23

Applicant: IBM

Inventor： NELSON ALSHAKIM ,  BROCK PHILLIP JOE ,  SOORIYAKUMARAN RATMAN ,  DAVIS BLAKE ,  MILLER ROBERT DENNIS ,  ALLEN ROBERT DAVID ,  LIN QINGHUANG

IPC: H01L21/32 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312

Abstract: Silsesquioxan-Polymere, Silsesquioxan-Polymere in negativ photostrukturierbaren dielektrischen Formulierungen, Verfahren zur Bildung von Strukturen unter Verwendung von negativ photostrukturierbaren dielektrischen Formulierungen, welche Silsesquioxan-Polymere enthalten, und Strukturen, die aus Silsesquioxan-Polymeren hergestellt wurden.

公开(公告)号：SG73471A1

公开(公告)日：2000-06-20

申请号：SG1997003521

申请日：1997-09-24

Applicant: IBM

Inventor： HAWKER CRAIG JON ,  HEDRICK JAMES LUPTON ,  MILLER ROBERT DENNIS

IPC: H01L21/312 ,  H01L21/768 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H05K1/05

Abstract: The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of a hyperbranched polymer and organic polysilica.

公开(公告)号：DE69022685T2

公开(公告)日：1996-05-02

申请号：DE69022685

申请日：1990-11-07

Applicant: IBM

Inventor： ASTHANA RAHUL ,  MILLER ROBERT DENNIS ,  SCHELLENBERG FRANKLIN MARK ,  SINCERBOX GLENN TAVERNIA ,  ZAVISLAN JAMES MATTHEW

IPC: G01J4/04 ,  G02B27/28 ,  G02B27/42 ,  G11B7/135 ,  G11B11/10 ,  G11B11/105 ,  G11B13/04 ,  G11B7/12

Abstract: An improved apparatus and method for detecting the polarization state of an optical wavefront is disclosed, which is especially suitable for use in an integrated magneto-optic recording head. An optically transparent waveguide structure (10) transmits TE and TM modes of the wavefront propagated as a beam coupled into the waveguide by a TE/TM grating coupler (16). In the waveguide structure is a periodic structure (21) comprising a birefringent mode separator that splits the propagating beam into TE and TM modes. The mode separator comprises an array of uniformly spaced volumes of identical configuration. Photosensitive devices (13,14) detect the intensity of the light contained within each of the separated beams. The signals from these photosensitive devices are used to determine the state of polarization of the optical wavefront. The periodic structure may, if desired, comprise regions of alternating birefringence, such as a Bragg grating, either in a waveguide layer or a cladding layer. Focal power is introduced (1) by providing focal power in the input grating coupler to the waveguide with a curved grating structure, (2) by varying the pitch of the birefringent mode separator extending in a direction transverse to the optical axis of the propagating beam, or (3) by introducing a surface grating with a varying pitch in a direction transverse of the optical axis.

公开(公告)号：DE3470965D1

公开(公告)日：1988-06-09

申请号：DE3470965

申请日：1984-05-21

Applicant: IBM

Inventor： HIRAOKA HIROYUKI ,  HOFER DONALD CLIFFORD ,  MILLER ROBERT DENNIS ,  PEDERSON LESTER ARLYN ,  WILLSON CARLTON GRANT

IPC: G03C5/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  H01L21/027 ,  G03F7/02

Abstract: An oxygen-reactive ion etch barrier (2) in a multi-layer resist structure (1, 2, 3) consists of polysilane having a molecular weight above 4000 and a glass transition temperature above 100 DEG C. As the polysilane is a positive acting resist which is particularly sensitive to wavelengths less than 375 nm, the resist structure need have only two layers if equipment is available to expose the polysilane layer to radiation of less than 375 nm wavelength.

公开(公告)号：GB2512794A

公开(公告)日：2014-10-08

申请号：GB201413639

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/004 ,  C07F7/28 ,  C07F9/00 ,  G03F7/20

Abstract: Compositions are disclosed having the formula (3): [C']k[Ta(O2)x(L')y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L')y has a charge of 0 to -3, C' is a counterion having a charge of + 1 to +3, k is an integer of 0 to 3, L' is an oxidatively stable organic ligand having a charge of 0 to -4, and L' comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphme oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.

公开(公告)号：SG11201402450UA

公开(公告)日：2014-06-27

申请号：SG11201402450U

申请日：2013-02-12

Applicant: IBM

Inventor： BASS JOHN DAVID ,  SUNDBERG LINDA KARIN ,  WALLRAFF GREGORY MICHAEL ,  MILLER ROBERT DENNIS ,  KIM HO-CHEOL ,  SONG QING

IPC: G03F7/00 ,  G03F7/004

公开(公告)号：AT435255T

公开(公告)日：2009-07-15

申请号：AT07726443

申请日：2007-02-20

Applicant: IBM

Inventor： HEDRICK JAMES LUPTON ,  FROMMER JANE ELIZABETH ,  WINDELN JOHANNES ,  DUERIG URS ,  LEE VICTOR YEE-WAY ,  GOTSMANN BERND ,  MILLER ROBERT DENNIS ,  HAGBERG ERIK ,  MAGBITANG TEDDIE ,  KNOLL ARMIN ,  PRATT RUSSELL CLAYTON ,  WADE CHARLES

IPC: C08G73/12 ,  G11B9/00

Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.