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    HIGH TC SUPERCONDUCTORS
    24.
    发明专利
    HIGH TC SUPERCONDUCTORS 未知

    公开(公告)号：AU606673B2

    公开(公告)日：1991-02-14

    申请号：AU1452988

    申请日：1988-04-12

    Applicant: IBM

    Inventor： CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID ,  UMBACH CORWIN PAUL

    IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    HIGH TC SUPERCONDUCTORS
    25.
    发明专利
    HIGH TC SUPERCONDUCTORS 未知

    公开(公告)号：AU1452988A

    公开(公告)日：1988-10-13

    申请号：AU1452988

    申请日：1988-04-12

    Applicant: IBM

    Inventor： CLARK GREGORY JOHN ,  UMBACH CORWIN PAUL ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID

    IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/12

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate
    26.
    发明专利
    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate 未知

    公开(公告)号：DE2935615A1

    公开(公告)日：1980-08-21

    申请号：DE2935615

    申请日：1979-09-04

    Applicant: IBM

    Inventor： BROERS ALEC NIGEL ,  CUOMO JEROME JOHN ,  LAIBOWITZ ROBERT BENJAMIN ,  MOLZEN JUN WALTER WILLIAM

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/312 ,  H05K3/10

    Abstract: In formation of patterns by electron beam irradiation of resist, the resist is a surface migratable resist provided in thickness less than thickness required for pattern formation. Pref. the resist is formed on a thin film substrate supported by a non-electron backscattering substrate. The resist is exposed to a focussed electron beam to convert and fix the resist until the required pattern thickness is reached. Exposure duration control is esp. achieved by monitoring electron scattering by the converted and fixed resist. The nonelectron backscattering substrate is pref. Si, Si3N4, SiO2, Al2O3, polyimide, collodion or C. The resist is organic material, esp. silicone oil or tetraphenyl-tegramethyl-trisiloxane. Pattern line widths 100A can be formed as method avoids raggedness at the edges and provides control of pattern thickness and width. The resist pattern is useful in electrical contact control and light modulation, and may be used in situ, or may be used to transfer the pattern to another substrate for device formation using 20-50A X-ray irradiation.

    SUPERCONDUCTIVE TUNNELING DEVICE
    27.
    发明专利
    SUPERCONDUCTIVE TUNNELING DEVICE 未知

    公开(公告)号：GB1283690A

    公开(公告)日：1972-08-02

    申请号：GB5195670

    申请日：1970-11-02

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  LAIBOWITZ ROBERT BENJAMIN ,  MAYADAS ASHOK FRANK ,  ROSENBERG ROBERT

    IPC: H01L27/00 ,  H01L39/00 ,  H01L39/22

    Abstract: 1283690 Superconductor devices INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1970 [12 Nov l969] 51956/70 Heading HlK In a tunnelling device having a pair of superconductive electrodes separated by a barrier, at least one of the electrodes is single crystalline. The device may form a Josephson junction. The devices are produced by depositing the first electrode on a single crystal substrate, for example by RF or DC sputtering, thermal evaporation, or chemical vapour transport. The barrier layer is then formed for example by thermal oxidation, anodization, ion implantation, sputtering, or evaporation, and may be monocrystalline or amorphous, and the second electrode is then deposited. It is stated that the top electrode may be monocrystalline even if the barrier layer is amorphous providing the latter layer is thin. Examples of in-line and cross-film tunnelling cryotrons are described. A triode structure comprising one electrode separated from two further electrodes by tunnelling junctions (Fig. 6) and a known cryogenic memory array (Fig. 8) modified by utilizing monocrystalline electrodes and barrier layers are also described. The Specification contains a list of materials suitable for the substrate, electrodes and barrier layer.

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