公开(公告)号：DE102004042163A1

公开(公告)日：2006-03-16

申请号：DE102004042163

申请日：2004-08-31

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/74

Abstract: The thyristor has a semiconductor body (1) in which a p-doped emitter, n-doped base and n-doped main emitter are arranged. A sectional plane runs via n-doped short circuit zones. The ratio between the sum of cross sectional surfaces of one of the zones in an inner area and a cross sectional surface of the inner area is greater than that between the sum of surfaces of another zones in the outer area to a surface of the outer area. An independent claim is also included for a circuit arrangement with a thyristor.

公开(公告)号：DE10250608A1

公开(公告)日：2004-05-19

申请号：DE10250608

申请日：2002-10-30

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KELLNER-WERDEHAUSEN UWE ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/74

Abstract: A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.

公开(公告)号：DE59909045D1

公开(公告)日：2004-05-06

申请号：DE59909045

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

公开(公告)号：DE10243758A1

公开(公告)日：2004-04-01

申请号：DE10243758

申请日：2002-09-20

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER ,  MAUDER ANTON ,  NIEDERNOSTHEIDE FRANZ-JOSEF

IPC: H01L29/08 ,  H01L29/32 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868 ,  H01L21/328 ,  H01L29/06 ,  H01L29/74

Abstract: According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.

公开(公告)号：DE102006000903B4

公开(公告)日：2010-12-09

申请号：DE102006000903

申请日：2006-01-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER ,  KELLNER-WERDEHAUSEN UWE

IPC: H01L29/74 ,  H01L21/263 ,  H01L21/332

公开(公告)号：DE102004013405B4

公开(公告)日：2010-08-05

申请号：DE102004013405

申请日：2004-03-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTHELMESS REINER ,  SCHULZE HANS-JOACHIM

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/40 ,  H01L29/72 ,  H01L29/739 ,  H01L29/74

公开(公告)号：DE102008039742A1

公开(公告)日：2010-03-04

申请号：DE102008039742

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER ,  BARTHELMESS REINER ,  CHUKALURI ESWAR KUMAR

IPC: H01L29/74

Abstract: The thyristor has a semiconductor body (1), where an ignition stage area (ZS) with ignition stages (ZS1,ZS2,ZS3) and a main cathode area (HB) are arranged between an ignition area (Z) and a lateral edge of the semiconductor body in a lateral direction (r1) going out from the ignition area. The ignition stages are electrically coupled with the succeeding ignition stages or with the main cathode area by non-ohmic impedance (Z-fb). The non-ohmic impedance is connected between two successive ignition stages on the semiconductor body in the lateral direction. An independent claim is included for a circuit configuration, which has a housing.

公开(公告)号：DE102007057728A1

公开(公告)日：2009-06-04

申请号：DE102007057728

申请日：2007-11-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L21/334 ,  H01L23/60 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

公开(公告)号：DE102005027447B4

公开(公告)日：2009-04-16

申请号：DE102005027447

申请日：2005-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/739 ,  H01L29/74 ,  H01L29/78

公开(公告)号：DE102007041124A1

公开(公告)日：2009-03-12

申请号：DE102007041124

申请日：2007-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L21/332

Abstract: A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J.K-1.m-2 at each point.