Wireless in-chip and chip to chip communication

    公开(公告)号:US10122420B2

    公开(公告)日:2018-11-06

    申请号:US14979185

    申请日:2015-12-22

    Abstract: Apparatus and methods are provided for wireless communications between integrated circuits or integrated circuit dies of an electronic system. In an example, an apparatus can include a first integrated circuit die including a plurality of integrated circuit devices, a second integrated circuit die including a second plurality of integrated circuit devices, and a conductor device configured to wirelessly receive a signal from the first integrated circuit die, to conduct the signal from a first end of an electrical conductor of the conductor device to a second end of the electrical conductor, and to wirelessly transmit the signal to the second integrated circuit die from the second end of the electrical conductor.

    Hybrid exposure for semiconductor devices
    23.
    发明授权
    Hybrid exposure for semiconductor devices 有权
    半导体器件的混合曝光

    公开(公告)号:US09543224B1

    公开(公告)日:2017-01-10

    申请号:US14964494

    申请日:2015-12-09

    Abstract: Semiconductor packages and methods, systems, and apparatuses of forming such packages are described. A method of forming a semiconductor package may include encapsulating a semiconductor die with a molding compound, applying a seed layer on the die and the molding compound, applying a resist layer on the seed layer, exposing a first portion of the resist layer, and exposing a second portion of the resist layer. The first portion can include a first area of the resist layer to be used for forming a redistribution layer (RDL) without including a second area of the resist layer to be used for forming an electrical communications pathway between at least one of the contact pads and the RDL. The second portion can include the second area of the resist layer that includes the electrical communications pathway.

    Abstract translation: 描述了形成这种封装的半导体封装和方法,系统和装置。 形成半导体封装的方法可以包括用模塑料包封半导体管芯,在晶粒上施加种子层和模塑料,在种子层上施加抗蚀剂层,暴露抗蚀剂层的第一部分,并暴露 抗蚀剂层的第二部分。 第一部分可以包括用于形成再分布层(RDL)的抗蚀剂层的第一区域,而不包括用于在至少一个接触焊盘和至少一个接触焊盘之间形成电通信路径的抗蚀剂层的第二区域 RDL。 第二部分可以包括包括电通信路径的抗蚀剂层的第二区域。

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