公开(公告)号：EP3085077A4

公开(公告)日：2017-10-04

申请号：EP14872293

申请日：2014-12-18

Applicant: KLA-TENCOR CORP

Inventor： BROWN DAVID L ,  CHUANG YUNG-HO ,  FIELDEN JOHN

IPC: H04N5/335 ,  G01M11/00 ,  H04N5/357 ,  H04N5/376

CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/14636 ,  H01L31/02 ,  H04N5/3577 ,  H04N5/3765

Abstract: A method of inspecting a sample at high speed includes directing and focusing radiation onto a sample, and receiving radiation from the sample and directing received radiation to an image sensor. Notably, the method includes driving the image sensor with predetermined signals. The predetermined signals minimize a settling time of an output signal of the image sensor. The predetermined signals are controlled by a phase accumulator, which is used to select look-up values. The driving can further include loading an initial phase value, selecting most significant bits of the phase accumulator, and converting the look-up values to an analog signal. In one embodiment, for each cycle of a phase clock, a phase increment can be added to the phase accumulator. The driving can be performed by a custom waveform generator.

Abstract translation: 高速检查样本的方法包括将辐射引导和聚焦到样本上，并接收来自样本的辐射并将接收到的辐射引导到图像传感器。 值得注意的是，该方法包括用预定信号驱动图像传感器。 预定信号最小化图像传感器的输出信号的建立时间。 预定信号由相位累加器控制，该相位累加器用于选择查找值。 驱动还可以包括加载初始相位值，选择相位累加器的最高有效位，并将查找值转换为模拟信号。 在一个实施例中，对于相位时钟的每个周期，可以将相位增量添加到相位累加器。 驾驶可以由自定义波形发生器执行。

公开(公告)号：EP2973713A4

公开(公告)日：2016-10-05

申请号：EP14779717

申请日：2014-04-01

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  BROWN DAVID L ,  FIELDEN JOHN

IPC: H01L27/146 ,  H01J40/06 ,  H01J43/08 ,  H01L31/103

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其它实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：EP2742570A4

公开(公告)日：2015-06-03

申请号：EP12816820

申请日：2012-06-28

Applicant: KLA TENCOR CORP

Inventor： DRIBINSKI VLADIMIR ,  CHUANG YUNG-HO ALEX ,  ARMSTRONG JOSEPH J ,  FIELDEN JOHN

IPC: H01S3/098 ,  G01N21/88 ,  G02F1/37 ,  H01S3/109

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: A mode-locked laser system operable at low temperature can include an annealed, frequency-conversion crystal and a housing to maintain an annealed condition of the crystal during standard operation at the low temperature. In one embodiment, the crystal can have an increased length. First beam shaping optics can be configured to focus a beam from a light source to an elliptical cross section at a beam waist located in or proximate to the crystal. A harmonic separation block can divide an output from the crystal into beams of different frequencies separated in space. In one embodiment, the mode-locked laser system can further include second beam shaping optics configured to convert an elliptical cross section of the desired frequency beam into a beam with a desired aspect ratio, such as a circular cross section.

Abstract translation: 可操作以在低温下的锁模激光器系统可包括退火，频率变换晶体和外壳以维持在标准操作在低温下的结晶的退火状态。 在一个中，实施例的晶体可以具有上增加的长度。 第一光束成形光学器件可以被配置为在椭圆形的横截面从一个光源聚焦光束以在位于或接近晶体束腰。 谐波分离块可以划分到从晶体输出到在空间上分离不同频率的光束。 在一个中，实施例的锁模激光系统可包括被配置为转换为所需的频率光束的椭圆形横截面成光束具有所需的纵横比，颜色此外第二光束成形光学器件：例如圆形的横截面。

公开(公告)号：EP3008779A4

公开(公告)日：2017-01-18

申请号：EP14811528

申请日：2014-06-11

Applicant: KLA-TENCOR CORP

Inventor： CHUANG YUNG-HO ,  LU XIAOXU ,  FIELDEN JOHN

IPC: G02F1/35 ,  G02F1/355 ,  H01S3/109

CPC classification number: H01S3/109 ,  G02F1/353 ,  G02F1/3534 ,  G02F1/3558 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2201/17 ,  G02F2203/15 ,  H01S3/0092

Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.

Abstract translation: 深紫外（DUV）连续波（CW）激光器包括基本CW激光器，其被配置为产生具有在约1μm和1.1μm之间的对应波长的基频;三次谐波发生器模块，包括一个或多个非线性光学 （NLO）晶体，其产生三次谐波和可选的二次谐波，以及五次谐波发生器。 第五谐波发生器模块包括在基频处谐振的腔，并且在第一NLO晶体中组合基频和三次谐波以产生第四谐波，然后在第二NLO晶体中组合四次谐波与未消耗的基频，以产生 五次谐波。 使用一个或多个透镜来分别在第一和第二NLO晶体中聚焦第三和第四谐波。

公开(公告)号：EP2949015A4

公开(公告)日：2016-09-07

申请号：EP14742754

申请日：2014-01-24

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  ARMSTRONG J JOSEPH ,  DRIBINSKI VLADIMIR ,  DENG YUJUN ,  FIELDEN JOHN

IPC: H01S3/00 ,  G01N21/95 ,  G01N21/956 ,  G02F1/35 ,  G02F1/39

CPC classification number: H01S3/1083 ,  G01N21/84 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G02F1/3534 ,  G02F1/3536 ,  G02F1/39 ,  G02F2001/3507 ,  G02F2201/16 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/067

Abstract: A laser for generating an output wavelength of approximately 193.4 nm includes a fundamental laser, an optical parametric generator, a fourth harmonic generator, and a frequency mixing module. The optical parametric generator, which is coupled to the fundamental laser, can generate a down-converted signal. The fourth harmonic generator, which may be coupled to the optical parametric generator or the fundamental laser, can generate a fourth harmonic. The frequency mixing module, which is coupled to the optical parametric generator and the fourth harmonic generator, can generate a laser output at a frequency equal to a sum of the fourth harmonic and twice a frequency of the down-converted signal.

公开(公告)号：EP2311079A4

公开(公告)日：2013-02-20

申请号：EP09800821

申请日：2009-07-16

Applicant: KLA TENCOR CORP

Inventor： ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2013043831A3

公开(公告)日：2013-05-23

申请号：PCT/US2012056272

申请日：2012-09-20

Applicant: KLA TENCOR CORP ,  LIU XUEFENG ,  CHUANG YUNG-HO ALEX ,  FIELDEN JOHN ,  TSAI BIN-MING BENJAMIN ,  ZHANG JINGJING

Inventor： LIU XUEFENG ,  CHUANG YUNG-HO ALEX ,  FIELDEN JOHN ,  TSAI BIN-MING BENJAMIN ,  ZHANG JINGJING

IPC: H01L21/66

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: System and methods for process aware metrology are provided. The method compries the steps of selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, generating an initial model of the structure based on results of the simulating step, simulating the one or more characteristic of the structure that would be formed on the wafer using the one or more different values as input to the initial model, translating results of both of the simulating steps into the optical model of the structure, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供过程感知度量的系统和方法。 该方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择标称值和一个或多个不同值的工艺参数的步骤，模拟将在晶片上形成的结构的一个或多个特性，使用 标称值，基于模拟步骤的结果生成结构的初始模型，使用一个或多个不同值作为初始模型的输入来模拟将在晶片上形成的结构的一个或多个特性，翻译结果 两个模拟步骤进入结构的光学模型，以及基于结构的一个或多个特性如何在至少两个标称值和一个或多个不同值之间变化来确定光学模型的参数化。

公开(公告)号：WO2012134625A3

公开(公告)日：2013-03-14

申请号：PCT/US2012023205

申请日：2012-01-30

Applicant: KLA TENCOR CORP ,  CHUANG YUNG-HO ALEX ,  LEVINSKI VLADIMIR ,  LIU XUEFENG ,  FIELDEN JOHN

Inventor： CHUANG YUNG-HO ALEX ,  LEVINSKI VLADIMIR ,  LIU XUEFENG ,  FIELDEN JOHN

IPC: G01N21/88 ,  G01N21/01

CPC classification number: G01N21/9501 ,  G01N2021/479

Abstract: Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided.

Abstract translation: 提供了计量或检查系统的照明子系统，计量系统，检查系统和用于计量测量或检查的照明样本的方法。

公开(公告)号：WO2011106227A3

公开(公告)日：2011-12-08

申请号：PCT/US2011025198

申请日：2011-02-17

Applicant: KLA TENCOR CORP ,  GROSS KENNETH P ,  CHUANG YUNG-HO ,  FIELDEN JOHN

Inventor： GROSS KENNETH P ,  CHUANG YUNG-HO ,  FIELDEN JOHN

IPC: H01J65/00 ,  H01J61/16 ,  H01J61/30

CPC classification number: H01J61/302 ,  H01J61/025 ,  H01J61/16 ,  H01J61/54 ,  H01J61/86 ,  H01J65/04 ,  H01J65/042 ,  H01J65/06

Abstract: A cell for a vacuum ultraviolet plasma light source, the cell having a closed sapphire tube containing at least one noble gas. Such a cell does not have a metal housing, metal-to-metal seals, or any other metal flanges or components, except for the electrodes (in some embodiments). In this manner, the cell is kept to a relatively small size, and exhibits a more uniform heating of the gas and cell than can be readily achieved with a hybridized metal/window cell design. These designs generally result in higher plasma temperatures (a brighter light source), shorter wavelength output, and lower optical noise due to fewer gas convection currents created between the hotter plasma regions and surrounding colder gases. These cells provide a greater amount of output with wavelengths in the vacuum ultraviolet range than do quartz or fused silica cells. These cells also produce continuous spectral emission well into the infrared range, making them a broadband light source.

Abstract translation: 一种用于真空紫外等离子体光源的电池，该电池具有包含至少一种惰性气体的封闭的蓝宝石管。 除了电极（在一些实施例中）之外，这种电池不具有金属外壳，金属对金属密封件或任何其他金属凸缘或部件。 以这种方式，电池保持相对较小的尺寸，并且比用杂交金属/窗口电池设计容易实现的气体和电池表现出更均匀的加热。 这些设计通常导致较高的等离子体温度（较亮的光源），较短的波长输出以及较低的光学噪声，这是由于在较热的等离子体区域和周围较冷的气体之间产生较少的气体对流电流。 与石英或熔融石英单元相比，这些单元在真空紫外线范围内提供更多的输出波长。 这些电池还可以在红外范围内产生连续的光谱发射，使其成为宽带光源。

公开(公告)号：EP2880693A4

公开(公告)日：2016-06-01

申请号：EP13825872

申请日：2013-07-29

Applicant: KLA TENCOR CORP

Inventor： CHUANG YUNG-HO ALEX ,  FIELDEN JOHN

IPC: H01L31/10 ,  G01N21/95 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/148

CPC classification number: H01J29/385 ,  G01N21/9501 ,  G02B21/125 ,  H01J1/34 ,  H01J31/26 ,  H01J31/50 ,  H01L27/14643 ,  H01L27/148 ,  H01L27/14806 ,  H01L27/14893

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

Abstract translation: 在具有相对的照明​​（顶部）和输出（底部）表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄（例如1-5nm）的硼层直接设置在输出表面上。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成可选的抗反射材料层以增强光子进入硅衬底。 在相对的照明​​（顶部）和输出（底部）表面之间产生可选的外部电位。 光电阴极形成新型电子轰击电荷耦合器件（EBCCD）传感器和检测系统的一部分。