公开(公告)号：SG11201708164YA

公开(公告)日：2017-11-29

申请号：SG11201708164Y

申请日：2016-04-19

Applicant: KLA TENCOR CORP

Inventor： LEE MYUNGJUN ,  SMITH MARK D ,  ADEL MICHAEL E ,  AMIT ERAN ,  KANDEL DANIEL

IPC: H01L21/66

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

公开(公告)号：SG11201907074RA

公开(公告)日：2019-09-27

申请号：SG11201907074R

申请日：2018-02-27

Applicant: KLA TENCOR CORP

Inventor： GUREVICH EVGENI ,  ADEL MICHAEL E ,  GRONHEID ROEL ,  FELER YOEL ,  LEVINSKI VLADIMIR ,  KLEIN DANA ,  AHARON SHARON

IPC: H01L21/66

Abstract: 1 N 1-1 O O 1-1 00 O N C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 September 2018 (07.09.2018) WIP0 I PCT IiiimmoinionotiolomomioollmiooliolomovoimIE (10) International Publication Number WO 2018/160502 Al A (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/019793 (22) International Filing Date: 27 February 2018 (27.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,382 28 February 2017 (28.02.2017) US 62/591,104 27 November 2017 (27.11.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: GUREVICH, Evgeni; Hardufim Str. 12/7, 2063212 Yokneam Illit (IL). ADEL, Michael E.; 14 Yi- gal Alon Street, 30900 Ya'akov Zichron (IL). GRON- HEID, Roel; Sint Jansbergsesteenweg 83, 3001 Leuven (BE). FELER, Yoel; Derech Yad LeBanim 82/2, 32163 Haifa (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). KLEIN, Dana; Alexander Yanai 23, Carmeliya, 34816 Haifa (IL). AHARON, Sharon; Yuval 40, 1796000 Hanaton (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA MEASUREMENT MODEL CPE EIHO—W3F1

公开(公告)号：SG10201804964TA

公开(公告)日：2018-07-30

申请号：SG10201804964T

申请日：2014-12-10

Applicant: KLA TENCOR CORP

Inventor： ADEL MICHAEL E ,  AMIR NURIEL ,  GHINOVKER MARK ,  SHUSTERMAN TAL ,  GREADY DAVID ,  BORODYANSKY SERGEY

Abstract: PROCESS PARAMETERS 110-, \ INPUT MODULE CURRENT LAYER (SIMULATION OR DATA) PREVIOUS LAYER {SIMULATION OR DATA) WAFER PRODUCER 49 - \"\" OR TARGET DESIGNER 94- 1 TARGET PARAMETERS 96-. P ETROLOGY CONDITIDNS 4 h\"NRESHOLD 132 ,>c •1 2 92 P I40, TARGET OPI1MIZATION MODULE ORMAICF MORN i -129 7 123-- UROLOGY METMCS MODULE P 124-z- METROLOGY NEIRCS PROCESS ERIC'S 13°- \ SENSITNITY ANALYSIS MODULE 11 \ 20 \ - tRAW DATA METROLOGY SIMUALTION 78. \"\ t COARSE TARGET FILTDRING ure 1 TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS . Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification neals. Systems comprise the follow- ing elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production pro- cesses, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the tar- get data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology condi- tions with respect to the simulated target measurements. 90, 25

公开(公告)号：SG11201708135YA

公开(公告)日：2017-11-29

申请号：SG11201708135Y

申请日：2016-04-05

Applicant: KLA TENCOR CORP

Inventor： LEVY ADY ,  KANDEL DANIEL ,  ADEL MICHAEL E ,  POSLAVSKY LEONID ,  ROBINSON JOHN ,  MARCIANO TAL ,  BRINGOLTZ BARAK ,  GRUNZWEIG TZAHI ,  KLEIN DANA ,  ITZKOVICH TAL ,  CARMEL NADAV ,  AMIR NURIEL ,  RAMANATHAN VIDYA ,  CAMP JANAY ,  WAGNER MARK

IPC: H01L21/66 ,  G01N21/95

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

公开(公告)号：WO2009143200A3

公开(公告)日：2010-03-04

申请号：PCT/US2009044594

申请日：2009-05-20

Applicant: KLA TENCOR CORP ,  IZIKSON PAVEL ,  ADEL MICHAEL E ,  KANDEL DANIEL

Inventor： IZIKSON PAVEL ,  ADEL MICHAEL E ,  KANDEL DANIEL

IPC: H01L21/66

CPC classification number: G03F7/70641 ,  G05B19/41845 ,  G05B2219/32187 ,  G05B2219/36307 ,  H01L22/20 ,  Y02P90/16 ,  Y02P90/22

Abstract: A method of characterizing a process by selecting the process to characterize, selecting a parameter of the process to characterize, determining values of the parameter to use in a test matrix, specifying an eccentricity for the test matrix, selecting test structures to be created in cells on a substrate, processing the substrate through the process using in each cell the value of the parameter as determined by the eccentric test matrix, measuring a property of the test structures in the cells, and developing a correlation between the parameter and the property.

Abstract translation: 一种通过选择表征过程来表征过程的方法，选择过程的参数来表征，确定在测试矩阵中使用的参数的值，指定测试矩阵的偏心度，选择要在单元格中创建的测试结构 在基板上，通过在每个单元中使用由偏心测试矩阵确定的参数值来处理基板，测量单元中的测试结构的性质，以及发展参数与特性之间的相关性。

公开(公告)号：WO2010080732A3

公开(公告)日：2010-10-07

申请号：PCT/US2010020046

申请日：2010-01-04

Applicant: KLA TENCOR CORP ,  ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

Inventor： ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

IPC: H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

Abstract translation: 度量目标设计可以使用包括度量衡目标设计信息，衬底信息，过程信息和度量衡系统信息的输入来优化。 采用计量系统采集计量信号可以使用输入来建模以产生计量目标的一个或多个光学特性。 计量算法可以应用于特征以确定由计量系统制造的计量目标的测量的预测精度和精度。 与计量目标设计有关的部分信息可能会被修改，信号建模和计量算法可能会重复，以优化一个或多个测量的准确度和精确度。 计量目标设计可以在精确度和精度得到优化之后显示或存储。

公开(公告)号：WO2010011560A2

公开(公告)日：2010-01-28

申请号：PCT/US2009050834

申请日：2009-07-16

Applicant: KLA TENCOR CORP ,  ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

Inventor： ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract translation: 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

公开(公告)号：EP2386114A4

公开(公告)日：2017-10-25

申请号：EP10729404

申请日：2010-01-04

Applicant: KLA-TENCOR CORP

Inventor： ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

公开(公告)号：EP2311079A4

公开(公告)日：2013-02-20

申请号：EP09800821

申请日：2009-07-16

Applicant: KLA TENCOR CORP

Inventor： ADEL MICHAEL E ,  POSLAVSKY LEONID ,  FIELDEN JOHN ,  MADSEN JONATHAN MICHAEL ,  PETERS ROBERT

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00