公开(公告)号：WO2007001838B1

公开(公告)日：2008-09-04

申请号：PCT/US2006023042

申请日：2006-06-13

Applicant: LAM RES CORP ,  HUDSON ERIC ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  MARAKHTANOV ALEXEI

IPC: H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/321

Abstract: In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.

Abstract translation: 在具有等离子体处理室，至少一个供电电极和点火电极的等离子体处理系统中，公开了一种用于点燃等离子体的方法。 该方法包括将衬底引入等离子体处理室。 该方法还包括使气体混合物流入等离子体处理室; 以点火频率激发点火电极; 并用点火电极从气体混合物中冲击等离子体。 该方法还包括以目标频率激励至少一个动力电极，其中击发频率大于目标频率; 并且在处理等离子体处理室中的衬底时使点火电极断电。

公开(公告)号：WO2007149694A3

公开(公告)日：2008-03-20

申请号：PCT/US2007070265

申请日：2007-06-01

Applicant: LAM RES CORP ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

IPC: C23C16/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32596

Abstract: An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.

Abstract translation: 公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。 该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。 电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。 第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。 位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

公开(公告)号：WO2007145801A2

公开(公告)日：2007-12-21

申请号：PCT/US2007012581

申请日：2007-05-25

Applicant: LAM RES CORP ,  KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

Inventor： KEIL DOUGLAS ,  HUDSON ERIC ,  KIMBALL CHRIS ,  FISCHER ANDREAS

IPC: C23C14/00

CPC classification number: C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

Abstract: A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.

Abstract translation: 提供了一种用于等离子体处理室的故障检测方法。 该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。 这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。 该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。 检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。 如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

公开(公告)号：WO2007005210A2

公开(公告)日：2007-01-11

申请号：PCT/US2006023027

申请日：2006-06-13

Applicant: LAM RES CORP ,  KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

Inventor： KIMBALL CHRISTOPHER ,  HUDSON ERIC ,  KEIL DOUGLAS ,  MARAKHTANOV ALEXEI

IPC: C02F1/00

CPC classification number: H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed.The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

Abstract translation: 探针装置被配置为测量等离子体处理室中的一组电特性，所述等离子体处理室包括一组等离子体室表面，所述一组等离子体室表面被配置为暴露于等离子体。探针装置包括收集盘结构， 由此收集盘结构与该组等离子体室表面中的至少一个共面。 所述探针装置还包括导电路径，所述导电路径被配置为将所述一组电特性从所述收集盘结构传送到一组换能器，其中所述一组电特性由所述等离子体的离子通量产生。 探针装置还包括绝缘屏障，该绝缘屏障被配置为将收集盘和导电路径基本上与等离子体室表面集合电分离。

公开(公告)号：WO2004038788A2

公开(公告)日：2004-05-06

申请号：PCT/US0333706

申请日：2003-10-22

Applicant: LAM RES CORP ,  MCMILLIN BRIAN K ,  HUDSON ERIC ,  MARKS JEFFREY

Inventor： MCMILLIN BRIAN K ,  HUDSON ERIC ,  MARKS JEFFREY

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/768

CPC classification number: H01L21/76829 ,  H01J37/32963 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76801 ,  H01L21/76807 ,  H01L22/26

Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. Method includes etching through first layer and at least partially through end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from material that produces a detectable change in absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

Abstract translation: 公开了一种用于控制等离子体蚀刻工艺同时蚀刻具有设置在终点产生层上方的第一层的叠层的方法。 方法包括蚀刻穿过第一层并且至少部分地通过端点产生层，同时监测穿过等离子体处理室的内部部分的光束的吸收率，其中终点产生层选自产生可检测 蚀刻时吸收率的变化。 终点产生层的特征在于第一特征和第二特征中的至少一个。 第一特征是厚度不足以用作蚀刻停止层，并且第二特征是对蚀刻穿过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。 该方法还包括在检测到可检测到的变化时生成终点信号。

公开(公告)号：SG10201705046SA

公开(公告)日：2017-07-28

申请号：SG10201705046S

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

公开(公告)号：AU2003284890A1

公开(公告)日：2004-05-13

申请号：AU2003284890

申请日：2003-10-22

Applicant: LAM RES CORP

Inventor： MARKS JEFFREY ,  MCMILLIN BRIAN K ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/768

Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

公开(公告)号：IL186108A

公开(公告)日：2011-11-30

申请号：IL18610807

申请日：2007-09-20

Applicant: LAM RES CORP ,  HUDSON ERIC ,  DOUGLAS KEIL ,  MARAKHTANOV ALEXEI

Inventor： HUDSON ERIC ,  DOUGLAS KEIL ,  MARAKHTANOV ALEXEI

Abstract: An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.

公开(公告)号：IL185743A

公开(公告)日：2010-12-30

申请号：IL18574307

申请日：2007-09-05

Applicant: LAM RES CORP ,  CIRIGLIANO PETER ,  SADJADI S M REZA ,  HUDSON ERIC ,  HUANG ZHISONG ,  KIM JI SOO

Inventor： CIRIGLIANO PETER ,  SADJADI S M REZA ,  HUDSON ERIC ,  HUANG ZHISONG ,  KIM JI SOO

Abstract: A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

公开(公告)号：SG10201602732TA

公开(公告)日：2016-05-30

申请号：SG10201602732T

申请日：2012-08-17

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.