公开(公告)号：JPH058567B2

公开(公告)日：1993-02-02

申请号：JP696485

申请日：1985-01-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205

公开(公告)号：JPH0413140A

公开(公告)日：1992-01-17

申请号：JP11624690

申请日：1990-05-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: G03F1/90 ,  H01L21/027

Abstract: PURPOSE:To stably transfer a micropattern near to a resolution limit in high precision by forming a thin organic film having a T-formed cross section remaining after etching on a light-shielding film. CONSTITUTION:Phase shifting layers 5 each composed of a resist having the T-formed cross section are formed on the circumferences of the opening patterns on the light-shielding film 2 on a mask pattern so as to impart the phase differences. When this photomask is used for projection exposure, light passing through the circumference of the opening pattern is different in phase from that through its center. In the case of coherent incident light, mutual action of amplitude in 2 parts of light interferes and weakens each other, and restrains lateral enlargement of light, thus permitting micropatterns near the resolution limit to be stably transferred in high precision.

公开(公告)号：JPS6336660B2

公开(公告)日：1988-07-21

申请号：JP17189584

申请日：1984-08-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: G03F1/00 ,  G03F1/54 ,  G03F1/58 ,  G03F1/88 ,  H01L21/027

公开(公告)号：JPS6276723A

公开(公告)日：1987-04-08

申请号：JP21706485

申请日：1985-09-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO ,  YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/26 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To form a pattern of vertical side wall on an organic thin film with alkali developer by forming the organic thin film to be dissolved in the developer with nonphotosensitivity on a substrate, emitting plasma including Cl or F, then superposing insoluble resist mask on the developer, and etching the thin film by O2 plasma. CONSTITUTION:A polyimide silane resin film 2 to be dissolved with alkali developer with nonsensitivity is formed on a substrate 1, plasma is emitted with CCl4/O2 to prevent the upper layer from mixing with the resist to insolubilize it in the developer. Then, a resist thin film 4 insoluble in the developer is exposed and developed, only the surface of the film 2 is etched by O2 plasma 5, and the film 2 of the hole is etched with the developer. Since the film 2 and the resist 4 have different developers, the pattern widths of both can be independently controlled to facilitate the formation of vertical wall or overhang side wall. The mixture of upper and lower layers is eliminated due to the deterioration of the surface caused by the plasma emitting including Cl or F, and the selection of the resist is not limited.

公开(公告)号：JPS6255925A

公开(公告)日：1987-03-11

申请号：JP19633085

申请日：1985-09-05

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: C23C14/02 ,  H01L21/203 ,  H01L21/28

Abstract: PURPOSE:To improve the adhesiveness of an evaporation film to a substrate by a method wherein the substrate is coated with a hexamethyldisilazane solution, baking is applied, and a thin film is formed by vapor deposition on the substrate thus treated. CONSTITUTION:A hexamethyldisilazane solution is applied on an Si substrate 1 to form a hexamethyldisilazane film 2 thereon, and baking is applied thereto. Then, a BN film 3 is formed by sputter evaporation on the substrate thus treated. The film 3 formed by the evaporation according to this process shows strong adhesiveness and causes no exfoliation.

公开(公告)号：JPS6237972A

公开(公告)日：1987-02-18

申请号：JP17795985

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L29/812 ,  H01L21/28 ,  H01L21/338 ,  H01L29/47 ,  H01L29/80 ,  H01L29/872

Abstract: PURPOSE:To form a low resistance electrode, whose pattern width is controlled highly accurately, by forming an opening part, whose cross section is of an inverted trapezoidal-shape, in an insulating film on a substrate, forming an etched recess part in the substrate through the opening part, and thereafter depositing and forming an electrode metal in the opening part. CONSTITUTION:An insulating film 9 of SiO2 is grown on a substrate 8 comprising a GaAs active layer. Then a gate pattern is formed with polymethyl methacrylate resist 10. The film 9 is etched with the mixed liquid of HF and NH4F. An opening part, whose cross section is of an inverted trapezoidal-shape, is formed. The width of the lower surface side of the opening is the same as that of the opening pattern of the resist 10. After the opening of the resist 10 is expanded, the substrate 8 undergoes isotropic etching, and an etched recess part is formed. Then, an Al film 11 is evaporated. Finally the resist 10 is removed, and a low gate resistance electrode 12, which is supported by the inverted trapezoidal-shaped opening part, is formed.

公开(公告)号：JPS6237928A

公开(公告)日：1987-02-18

申请号：JP17796285

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI ,  TAKASU YASUHIRO ,  YAMASHITA HIROSHI

IPC: H01L21/28

Abstract: PURPOSE:To form easily a fine metal electrode by applying a lift-off method, by irradiating with the plasma containing F or Cl the resist pattern on a substrate, until the amount of resist film reduction reaches the predefined value. CONSTITUTION:A resist pattern 2 is formed on a substrate 1. The plasma irradiation containing F or Cl is continued until the amount of resist film reduction becomes less than 0.1mum. A metal 4 is deposited and a metal electrode 4 is formed by a lift-off method. Thus the heat resistance of pattern 2 increases as compared with the cose where the plasma containing F or Cl is not made to irradiate. Thereby a fine metal electrode is easily formed by the lift-off method.

公开(公告)号：JPS6232617A

公开(公告)日：1987-02-12

申请号：JP17157585

申请日：1985-08-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/283 ,  H01L21/302 ,  H01L21/3065 ,  H01L23/522

Abstract: PURPOSE:To make an etching process unnecessary and eliminate irregulating of quality caused by the etching, by hardening a novolak system photoresist film to form a protection film of a semiconductor device. CONSTITUTION:A photoresist film 9 coated with a novolak system photoresist is formed on a wiring electrode 7. The coated novolak system photoresist is selectively exposed through a pattern mask, and then is developed to obtain the desired photoresist pattern and to form a photoresist film 9 having an aperture part 10 for a bonding pad. Said photoresist film 9 is totally irradiated by far-ultraviolet rays, and thereby a substrate is heated. As a result of said process, the whole part of photoresist film 9 hardens and becomes a photoresist film 91 which is not solved by an organic solvent and serves as the protection film of an electrode.

公开(公告)号：JPS6224628A

公开(公告)日：1987-02-02

申请号：JP16344885

申请日：1985-07-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: H01L21/30 ,  H01L21/027 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PURPOSE:To incline the side wall of an opening by a method wherein, after an opening has been formed on a photoresist film which absorbs far ultraviolet ray with specified wavelength, a part other than that near the opening is exposed to ultraviolet ray with specified wavelength, and then the unexposed part is flowed, and the exposed part is heat-treated within the temperature range without flow. CONSTITUTION:A silicon oxide film 12 is formed on a silicon substrate 11, a photoresist film 13 is formed on the film 12, and an opening 14 is formed in the film 13. Then, the upper part of the film 13 is provided with a photomask 15 whose region that is facing a specified region wider than the opening 14 is opaque and undergoes the exposure with far ultraviolet ray 16 with wavelength of 300nm. After that, the photoresist in the region near the opening 14 where no ultravillet ray is directed flows out when being heat-treated at the temperature of 180 deg.C for 30min. As a result of this, an opening section 17 with the side wall as an inclined plane is formed, thereby providing a resist pattern with an opening whose side wall inclination angle and pattern width are controlled with high accuracy.

公开(公告)号：JPS6150152A

公开(公告)日：1986-03-12

申请号：JP17189584

申请日：1984-08-17

Applicant: Matsushita Electronics Corp

Inventor： TODOKORO YOSHIHIRO

IPC: G03F1/00 ,  G03F1/54 ,  G03F1/58 ,  G03F1/88 ,  H01L21/027

CPC classification number: G03F1/88

Abstract: PURPOSE:To obtain a photomask which is provided with a pattern having high accuracy by electron beam exposing and is suitable for production of a semiconductor element, etc. by providing a thin transparent org. resin film on a transparent substrate and forming the metallic pattern on the film. CONSTITUTION:The transparent org. resin film having about 10mu thickness is formed of, for example, polyimide 7 on the substrate 1 consisting of transparent glass, etc. A Cr film 2 is then formed to about 1,000Angstrom on the polyimide 7. An electron beam is exposed from the film 2 side and the film 7 in the exposed part and the Cr film thereon are lifted off to form the metallic pattern via the film 7 on the substrate 1. The electrons scattered by the electron beam are decreased by the thin chromium film 2 are thus decreased. The return of the electrons transmitted through the film 7 to the film 7 from the substrate 1 and the consequent decrease in the accuracy of the pattern are thus obtd. and the photomask having the pattern with high accuracy is thus obtd.

Abstract translation: 目的：为了获得通过电子束曝光提供高精度图案的光掩模，并且通过提供薄的透明组织适于生产半导体元件等。 树脂膜在透明基板上并在膜上形成金属图案。 构成：透明组织 具有约10μm厚度的树脂膜由例如由透明玻璃等构成的基板1上的聚酰亚胺7形成。然后，在聚酰亚胺7上形成约1000埃的Cr膜2.电子束从膜 2侧，暴露部分中的膜7和其上的Cr膜被提起，以通过基板1上的膜7形成金属图案。由于薄铬膜2因此而被电子束散射的电子减少 。 因此，能够将通过膜7传输的电子从衬底1返回到膜7，并因此降低了图案的精度。 因此具有高精度的图案的光掩模。