公开(公告)号：WO2004006633A3

公开(公告)日：2004-06-17

申请号：PCT/US0320650

申请日：2003-06-03

Applicant: MOTOROLA INC

Inventor： ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL ,  KALANASUNDARAM KRISHNA ,  SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY

IPC: H01L29/417 ,  H01L21/336 ,  H01L21/338 ,  H01L29/786 ,  H01L29/812 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/06

CPC classification number: H01L51/0516 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/0024 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0046 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/0097 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

Abstract: An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.

Abstract translation: 包括场效应晶体管（102,202,302,402）的集成电路（100,200,300,400）通过在一个衬底上形成有机半导体沟道（112,216,308,418）来制造， 204），在一个或多个其它衬底（104,108,206）上形成器件电极（114,116,110,208,210,212），然后将衬底层叠在一起。 在一个实施例中，在执行层压之前，在一个基板（204,206）上形成用作栅极电介质的电介质贴片（214）。 层压为器件组装提供了低成本的途径，允许在不同衬底上单独制造不同的器件结构，并且使各种器件层产生改善的性能。

公开(公告)号：WO2004006300B1

公开(公告)日：2004-05-27

申请号：PCT/US0320267

申请日：2003-06-26

Applicant: MOTOROLA INC

Inventor： ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL ,  KALYANASUNDARAM KRISHNA ,  SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY

IPC: H01L21/00 ,  H01L35/24 ,  H01L51/00 ,  H01L51/40

CPC classification number: H01L51/0545 ,  H01L51/0021

Abstract: An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.

Abstract translation: 有机场效应晶体管在各种界面处利用双功能接触增强剂，以改善载流子迁移率通过有机半导体层，改善载流子注入，并通过双功能机制增强粘附力。 接触增强剂可以位于栅极（2）和电介质层（3）之间，以在栅电极和电介质层之间形成化学或物理结合。 它也可以位于介电层和有机半导体层（4）之间，或位于源极和漏极（5,6）和有机半导体层之间。

公开(公告)号：WO2004006300A2

公开(公告)日：2004-01-15

申请号：PCT/US0320267

申请日：2003-06-26

Applicant: MOTOROLA INC

Inventor： ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL ,  KALYANASUNDARAM KRISHNA ,  SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY

IPC: H01L21/00 ,  H01L35/24 ,  H01L51/00 ,  H01L51/40 ,  H01L

CPC classification number: H01L51/0545 ,  H01L51/0021

Abstract: An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.

公开(公告)号：AU2003297348A1

公开(公告)日：2004-07-29

申请号：AU2003297348

申请日：2003-12-18

Applicant: MOTOROLA INC

Inventor： ZHANG JIE ,  GAMOTA DANIEL ,  ZHANG MIN-XIAN ,  BRAZIS PAUL ,  KALYANASUNDARAM KRISHNA

IPC: H01L51/00 ,  H01L51/30 ,  H01L51/40

公开(公告)号：AU2003258965A8

公开(公告)日：2004-01-23

申请号：AU2003258965

申请日：2003-06-26

Applicant: MOTOROLA INC

Inventor： GAMOTA DANIEL ,  ZHANG JIE ,  CHOWDHURI ABHIJIT ROY ,  SCHEIFERS STEVEN ,  KALYANASUNDARAM KRISHNA ,  BRAZIS PAUL ,  WIELGUS JERZY

IPC: H01L21/00 ,  H01L35/24 ,  H01L51/00 ,  H01L51/40

Abstract: An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.

公开(公告)号：EP1946390A4

公开(公告)日：2010-06-09

申请号：EP06826006

申请日：2006-10-16

Applicant: MOTOROLA INC

Inventor： ZHANG JIE ,  ADEWOLE HAKEEM B ,  BRAZIS PAUL W ,  COLLINS TIMOTHY J ,  GAMOTA DANIEL R ,  SZCZECH JOHN B ,  WIELGUS JERZY

IPC: H01L35/24 ,  H01L21/336 ,  H01L49/02 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0554 ,  H01L27/1292 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0004 ,  H01L51/0022

公开(公告)号：AU2003297348A8

公开(公告)日：2004-07-29

申请号：AU2003297348

申请日：2003-12-18

Applicant: MOTOROLA INC

Inventor： BRAZIS PAUL ,  ZHANG MIN-XIAN ,  ZHANG JIE ,  KALYANASUNDARAM KRISHNA ,  GAMOTA DANIEL

IPC: H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L35/24

公开(公告)号：AU2003258965A1

公开(公告)日：2004-01-23

申请号：AU2003258965

申请日：2003-06-26

Applicant: MOTOROLA INC

Inventor： KALYANASUNDARAM KRISHNA ,  SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY ,  ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL

IPC: H01L21/00 ,  H01L35/24 ,  H01L51/00 ,  H01L51/40

Abstract: An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.

公开(公告)号：AU2003248770A8

公开(公告)日：2004-01-23

申请号：AU2003248770

申请日：2003-06-03

Applicant: MOTOROLA INC

Inventor： BRAZIS PAUL ,  SCHEIFERS STEVEN ,  CHOWDHURI ABHIJIT ROY ,  GAMOTA DANIEL ,  KALANASUNDARAM KRISHNA ,  WIELGUS JERZY ,  ZHANG JIE

IPC: H01L29/417 ,  H01L21/336 ,  H01L21/338 ,  H01L29/786 ,  H01L29/812 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/06

Abstract: An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.

公开(公告)号：AU2003248770A1

公开(公告)日：2004-01-23

申请号：AU2003248770

申请日：2003-06-03

Applicant: MOTOROLA INC

Inventor： SCHEIFERS STEVEN ,  WIELGUS JERZY ,  CHOWDHURI ABHIJIT ROY ,  ZHANG JIE ,  BRAZIS PAUL ,  GAMOTA DANIEL ,  KALANASUNDARAM KRISHNA

IPC: H01L29/417 ,  H01L21/336 ,  H01L21/338 ,  H01L29/786 ,  H01L29/812 ,  H01L35/24 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.