Abstract:
Printed circuit boards with integral high and low value resistors are efficiently produced. The method of their manufacture entails applying a first layer of a low resistance material onto a dielectric substrate in a predetermined thickness and pattern. The pattern defines the electrical lengths and widths of low value resistors, as well as pairs of terminal electrode pads for the high value resistors. A second layer of a high resistance material is applied between and in contact with the top surfaces of the facing ends of each member of the terminal pad pairs. The fixed lengths, widths and thicknesses of the patterned high resistance material determine the values of the high value resistors. Conductive metal terminals are provided at the ends of the low value resistors and at the distal ends of the high value resistor pad pairs to complete the resistors.
Abstract:
A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions with desirable processing and dimensional characteristics. The invention is particularly useful for producing integral capacitors, with the desired processing and dimensional characteristics achieved with the invention yielding predictable electrical characteristics for the capacitors. The method generally entails providing a substrate with a first conductive layer, forming a dielectric layer on the first conductive layer, and then forming a second conductive layer on the dielectric layer. A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed. From this process, the first regions of the conductive and dielectric layers are each removed by using the overlying layer or layers as a mask, so that the remaining second regions of these layers are coextensive.
Abstract:
A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions with desirable processing and dimensional characteristics. The invention is particularly useful for producing integral capacitors, with the desired processing and dimensional characteristics achieved with the invention yielding predictable electrical characteristics for the capacitors. The method generally entails providing a substrate with a first conductive layer, forming a dielectric layer on the first conductive layer, and then forming a second conductive layer on the dielectric layer. A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed. From this process, the first regions of the conductive and dielectric layers are each removed by using the overlying layer or layers as a mask, so that the remaining second regions of these layers are coextensive.
Abstract:
Printed circuit boards with integral high and low value resistors are efficiently produced. The method of their manufacture entails applying a first layer of a low resistance material onto a dielectric substrate in a predetermined thickness and pattern. The pattern defines the electrical lengths and widths of low value resistors, as well as pairs of terminal electrode pads for the high value resistors. A second layer of a high resistance material is applied between and in contact with the top surfaces of the facing ends of each member of the terminal pad pairs. The fixed lengths, widths and thicknesses of the patterned high resistance material determine the values of the high value resistors. Conductive metal terminals are provided at the ends of the low value resistors and at the distal ends of the high value resistor pad pairs to complete the resistors.
Abstract:
Printed circuit boards with integral high and low value resistors are efficiently produced. The method of their manufacture entails applying a first layer of a low resistance material onto a dielectric substrate in a predetermined thickness and pattern. The pattern defines the electrical lengths and widths of low value resistors, as well as pairs of terminal electrode pads for the high value resistors. A second layer of a high resistance material is applied between and in contact with the top surfaces of the facing ends of each member of the terminal pad pairs. The fixed lengths, widths and thicknesses of the patterned high resistance material determine the values of the high value resistors. Conductive metal terminals are provided at the ends of the low value resistors and at the distal ends of the high value resistor pad pairs to complete the resistors.
Abstract:
A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions with desirable processing and dimensional characteristics. The invention is particularly useful for producing integral capacitors, with the desired processing and dimensional characteristics achieved with the invention yielding predictable electrical characteristics for the capacitors. The method generally entails providing a substrate with a first conductive layer, forming a dielectric layer on the first conductive layer, and then forming a second conductive layer on the dielectric layer. A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed. From this process, the first regions of the conductive and dielectric layers are each removed by using the overlying layer or layers as a mask, so that the remaining second regions of these layers are coextensive.
Abstract:
Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.
Abstract:
A method for manufacturing a microelectronic assembly to have aligned conductive regions and dielectric regions, for example, for producing integral capacitors (32), generally entails providing a substrate (10) with a first conductive layer (12), forming a dielectric layer (14) on the first conductive layer, and then forming a second conductive layer on the dielectric layer (16). A first region of the second conductive layer is then removed to expose a first region of the dielectric layer, which in turn is removed to expose a first region of the first conductive layer that is also removed. From this process, the first regions of the conductive and dielectric layers are each removed by using the overlying layer or layers as a mask, so that the remaining second regions of these layers are coextensive.