公开(公告)号：JP2006350255A

公开(公告)日：2006-12-28

申请号：JP2005179911

申请日：2005-06-20

Applicant: SONY CORP

Inventor： FREDERICO SEBASTIAN ,  ASAZUMA YASUNORI

IPC: G02B6/02 ,  G02B6/42 ,  H01S5/02

Abstract: PROBLEM TO BE SOLVED: To provide a multimode optical fiber and an optical module that deteriorate no output and that are essentially free from influence by return light. SOLUTION: The multimode optical fiber 40 is provided with a core part 43 for the purpose of propagating in multimode a laser beam emitted from a semiconductor laser 20. The core part 43 is covered with a clad part 44 that encloses in the core part 43 the laser beam to be propagated. In an optical waveguide part 42 comprising these core part 43 and clad part 44, the end face 40A on the incident side of the laser beam is formed continuously from the core part 43 over to the clad part 44. In the end face 40A, a light reflecting part 41 is formed as well as the incident region of the laser beam. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2006135001A

公开(公告)日：2006-05-25

申请号：JP2004320465

申请日：2004-11-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIYAJIMA TAKAO ,  TOMITANI SHIGETAKA ,  ASAZUMA YASUNORI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element capable of increasing the composition ratio of indium contained in an indium-containing layer such as a GaInN mixed crystal layer or the like while being capable of improving a crystal quality and capable of enhancing characteristics. SOLUTION: A low-temperature buffer layer 11, a first intermediate layer 21, a polarity inversion layer 20, a second intermediate layer 22, an n-side contact layer 31, an n-type clad layer 32, a first guide layer 33, an active layer 34, a second guide layer 35, a p-type clad layer 36, and a p-side contact layer 37, are laminated successively on one surface side of a substrate 10. The polarity inversion layer 20 is composed of GaN, and contains magnesium (Mg) as impurities and a polarity is inverted from a Ga polarity to an N polarity. A section from the second intermediate layer 22 to an upper section (the p-type contact layer 37) is brought to the N polarity, and the active layer 34 has the indium composition ratio, and the crystal quality higher than the active layer 34 is formed on the layer having the Ga polarity. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体元件，其能够提高包含在诸如GaInN混晶层等的含铟层中的铟的组成比，同时能够提高晶体质量并且能够增强 特点。 解决方案：低温缓冲层11，第一中间层21，极性反转层20，第二中间层22，n侧接触层31，n型覆层32，第一引导件 层33，有源层34，第二引导层35，p型覆盖层36和p侧接触层37依次层叠在基板10的一个表面侧。极性反转层20构成 的GaN，并且含有镁（Mg）作为杂质，并且极性从Ga极性反转到N极性。 从第二中间层22到上部（p型接触层37）的部分变为N极性，有源层34具有铟组成比，并且比有源层34高的晶体质量为 形成在具有Ga极性的层上。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004172252A

公开(公告)日：2004-06-17

申请号：JP2002334629

申请日：2002-11-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  HIRATA SHOJI

IPC: H01S5/223 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has a configuration capable of displaying a uniform luminous intensity distribution in NFP or FFP and controlling an angle of θ//.
SOLUTION: The rib guide structure 58 of the semiconductor laser device 50 is composed of a wide belt-shaped rib body 54 and banded structures 56 provided in symmetry on the sides of the rib body 54 and provided in a region over the light emitting region 32 of a p-Al
0.7 Ga
0.3 As guide layer 52. In the semiconductor laser device 50, the positions and widths of grooves and belt-shaped projections composing the banded structures 56 are so provided as to conform to the regularity of a bright/dark pattern of a Fresnel zone plate.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004146852A

公开(公告)日：2004-05-20

申请号：JP2004029739

申请日：2004-02-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electric conductivity, and also to homogenize the composition ratio and p-type impurity concentration in a growth surface of a crystal. SOLUTION: Alternate stacking of a plurality of first and second layers 11 and 12, respectively, with each first layer 11 and each second layer 12 stacking one over another and subsequent heat-treatment yield third layers between the first layers 11 and second layers 12, wherein the first layers 11 are AlGaN mixed crystal approximately 1 to 100nm thick and second layers 12 are Mg-doped p-type GaN approximately 1 to 100 nm thick. The third layers contain aluminum in a lower concentration than the first layers and contain p-type impurity in a lower concentration than the second layers. It is feasible to form the third layers by forming the first and second layers that have different contents of aluminum and different concentrations of the p-type impurity from each other, through separate processes, and subsequently heat-treatment, whereby it is enabled to manufacture with facility a good-quality p-type group III nitride compound semiconductor having properties of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004128519A

公开(公告)日：2004-04-22

申请号：JP2003417113

申请日：2003-12-15

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has superior luminous properties, is very reliable, and has a long service life. SOLUTION: A method of manufacturing the semiconductor light emitting device comprises a first step of enabling a nitride III-V compound semiconductor layer forming a light emitting device structure to grow on a nitride III-V compound semiconductor substrate where a plurality of second regions having a second average dislocation density higher than a first average dislocation density possessed by a first crystal region are regularly arranged in an array in the first crystal region and a second step of scribing the nitride III-V compound semiconductor substrate on which the nitride III-V compound semiconductor layer is grown along an outline containing a straight line drawn between the two adjacent second regions. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003347238A

公开(公告)日：2003-12-05

申请号：JP2002155507

申请日：2002-05-29

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  GOTO OSAMU ,  TOJO TAKESHI

IPC: H01L21/28 ,  H01L21/205 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L2933/0016

Abstract: PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor device which operates at a low voltage with high reliability. SOLUTION: The GaN semiconductor laser device has irregularities on a p-type GaN contact layer so that a p-side electrode metal film and the p-type GaN contact layer are improved in adhesion between them, increased in a contacting area, and reduced in contact resistance, the metal film is firmly attached to the contact layer as penetrating into recesses of the irregularities, and the metal film is hardly separated from the contact layer. The irregularities formed on all the surface of the contact layer are dispersedly present so as to let two or more irregularities or recesses be located in every region of a width 1 μm through all the surface of the contact layer, furthermore a height difference (level difference) between the top of a projection 46 and the bottom of the recess 48 adjacent to the projection 46 is set larger than the lattice constant of a GaN crystal. Rms of the irregularities (standard deviation of height) located in every region in a 1 μm square is larger than 0.25 nm. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供以高可靠性在低电压下操作的氮化镓半导体器件。 解决方案：GaN半导体激光器件在p型GaN接触层上具有不规则性，使得p侧电极金属膜和p型GaN接触层在它们之间的粘附性提高，接触面积增加， 并且接触电阻降低时，金属膜贯穿于凹凸部的凹部中，牢固地附着在接触层上，金属膜几乎不与接触层分离。 形成在接触层的全部表面上的凹凸分散地存在，以便通过接触层的整个表面在宽度为1μm的每个区域中设置两个或更多个凹凸或凹陷，此外，高度差（电平差 ）设置在比GaN晶体的晶格常数大的突起46的顶部和与突出部46相邻的凹部48的底部之间。 位于1μm平方的每个区域的不规则度（标准偏差）的Rms大于0.25nm。 版权所有（C）2004，JPO

公开(公告)号：JP2000164989A

公开(公告)日：2000-06-16

申请号：JP33635698

申请日：1998-11-26

Applicant: SONY CORP

Inventor： HINO TOMOKIMI ,  ASANO TAKEHARU ,  ASAZUMA YASUNORI

IPC: H01L21/205 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing nitride-based III-V compound semiconductor that has high quality by preventing voids when it is grown by using a growing mask, and that can be used to manufacture a highly reliable semiconductor device with high design flexibility when used to manufacture a semiconductor device or a substrate used therefor, and provide a semiconductor device that can achieve high reliability and design flexibility even when it contains a nitride-based III-V compound semiconductor layer selectively grown by using a growing mask. SOLUTION: An SiO2 film 3 having a stripe shape as a growing mask is formed on a GaN layer 2 grown on a c-face sapphire substrate 1. The width of the upper end of the SiO2 film 3 is made 4.8 μm or less. With the SiO2 layer 3 formed on the GaN layer 2, a GaN layer 4 is selectively grown on the GaN layer 2. If a GaN semiconductor laser is manufactured, a semiconductor layer for forming a laser structure is grown on the GaN layer 4.

公开(公告)号：JP2000164987A

公开(公告)日：2000-06-16

申请号：JP33585398

申请日：1998-11-26

Applicant: SONY CORP

Inventor： YAMAGUCHI KYOJI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI ,  ASAZUMA YASUNORI ,  ASANO TAKEHARU ,  HINO TOMOKIMI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To achieve a more stable horizontal mode, higher output and longer life of a semiconductor light emitting element using nitride-based III-V compound semiconductor. SOLUTION: In a GaN semiconductor laser, an AlGaN buried layer 9 is provided to bury both sides of a ridge stripe portion formed on the upper layer portion of a p-type AlGaN clad layer 7. After the upper layer portion of the p-type AlGaN clad layer 7 and a p-type GaN contact layer 8 are etched by using the SiO2 layer 21 as an etching mask to pattern them, the AlGaN buried layer 9 is unselectively grown with the SiO2 layer 21 formed on the ridge stripe so that both sides of the ridge stripe are buried. Furthermore, the AlGaN buried layer 9 is etched by using the SiO2 layer 21 as an etching stop layer to remove the portion of the AlGaN buried layer 9 from the ridge stripe.

公开(公告)号：JPH10326911A

公开(公告)日：1998-12-08

申请号：JP13540697

申请日：1997-05-26

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To improve crystalline property and electrical conductivity and to uniformize a composition ratio in the growing surface of crystal and p-type impurity concentration. SOLUTION: Plural 1st layers 11, each of which consists of AlGaN mixed crystal and has about 1 to 100 nm thickness and plural 2nd layers 12 each of which is Mg-added p-type GaN and has about 1 to 100 nm thickness, are laminated alternately. Since respective layers 11, 12 are thin, the laminated layers as a whole have properties of a p-type AlGaN mixed crystal, even when Mg is not included in the 1st layers 11 and Al is not included in the 2nd layers 12. Since an Al material and a Mg material are supplied so as to be timewisely separated, reaction between the Al material and the Mg material which interfere with the growth of fine crystal can be prevented. Thereby fine crystals can be allowed to grow.

公开(公告)号：JPH10112438A

公开(公告)日：1998-04-28

申请号：JP26462696

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a p-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and a bubbler 20A housing TMG(trimethylgallium) and adapted for supplying a TMG gas to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C. Then, a hydrogen gas is supplied to the bubbler 20A, thereby introducing the TMG gas into the reaction tube 14. A GaN:C crystal to which a carbon atom as a p-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:C crystal of good quality having less crystal defects is provided.