公开(公告)号：DE69313033T2

公开(公告)日：1998-03-12

申请号：DE69313033

申请日：1993-06-18

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATOSHI ,  IOCHI YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASAFUMI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  HIEI FUTOSHI

IPC: H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01S3/025 ,  H01S3/19 ,  H01L33/00 ,  H01L31/0352

Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).

公开(公告)号：MX9600508A

公开(公告)日：1997-04-30

申请号：MX9600508

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI ,  TANIGUCHI SATOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28 ,  H01L21/203

Abstract: Una película de un semiconductor compuesto del grupo II - VI de por lo menos uno de los elementos que pertenecen al grupo II de la tabla periodica, y por lo menos uno de los elementos que pertenecen al grupo VI de la tabla periodica se deposita sobre un substrato. Cuando la película se deposita sobre el substrato, se aplica un plasma de nitrogeno en estado excitado al substrato mientras que se remueven las partículas cargadas del plasma mediante un medio de remocion de partícula cargada. La película depositada del semiconductor compuesto del grupo II - VI adulterado con nitrogeno tiene un porcentaje aumentado de átomos de nitrogeno activados y cristalinidad mejorada.

公开(公告)号：DE69102092T2

公开(公告)日：1994-09-01

申请号：DE69102092

申请日：1991-03-25

Applicant: SONY CORP

Inventor： YAMAMOTO TADASHI ,  IKEDA MASAO ,  MIKATA YASUE

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser is formed into a double hereto junction structure comprising an n-type cladding layer (3) and a p-type cladding layer (5) with an active layer (4) interposed therebetween. The p-type cladding layer (5) has a laminated structure consisting of a first cladding layer (51) of (AlxGa1-x)InP disposed on one side adjacent to the active layer (4) and a second cladding layer (52) of AlyGa1-yAs disposed on the reverse side. A deterioration preventive layer (11) of AlzGa1-yAs is included in the first cladding layer (51) at a position spaced apart from the second cladding layer (52) by a predetermined distance. In addition, the second cladding layer (52) is partially removed, and a current stricture layer (10) is formed in such removed portion.

公开(公告)号：GB2178595B

公开(公告)日：1988-07-20

申请号：GB8618049

申请日：1986-07-24

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/32 ,  H01S5/323 ,  H01S3/18 ,  H01S3/04

Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.

公开(公告)号：FR2585522A1

公开(公告)日：1987-01-30

申请号：FR8610793

申请日：1986-07-25

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.

公开(公告)号：DE3625145A1

公开(公告)日：1987-01-29

申请号：DE3625145

申请日：1986-07-25

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

Abstract: A semiconductor laser device arranged so that at least one of cladding layers is formed of a thin AlGaInP layer having a larger energy band gap as compared with an active layer adjacent to the active layer and an AlGaAs layer having a high thermal conductivity as compared with that of the AlGaInP layer and the larger energy band gap as compared with the active layer, which is located between the AlGaInP layer and a heat sink, whereby a heat generated in the active layer is effectively radiated to the heat sink, thus the semiconductor laser being made capable of continuously emitting a laser light of a short wavelength at a room temperature.

公开(公告)号：JP2014078753A

公开(公告)日：2014-05-01

申请号：JP2014000846

申请日：2014-01-07

Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

IPC: H01S5/065 ,  H01S5/14 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a drive method of a mode-lock semiconductor laser element having a configuration capable of reducing influences of piezo polarization and spontaneous polarization.SOLUTION: The mode-lock semiconductor laser element has a laminate structure which includes: a first compound semiconductor layer 30 of a GaN compound semiconductor; a third compound semiconductor layer 40 having a light emitting region 41 and a saturable absorption region 42; and a second compound semiconductor layer 50 which are laminated in order; and a second electrode 62 and a first electrode 61. The second electrode 62 is separated into a first portion 62A and a second portion 62B by a separation groove 62C. When a current flows from a first portion of the second electrode to a first electrode via the light emitting region, the second electrode 62 gets into a forward bias state; and when a voltage is applied across the first electrode and the second portion of the second electrode, an electric field is applied to a saturable absorption region. Thus, the semiconductor laser element performs a single mode self-pulsation operation in the light emitting region.

Abstract translation: 要解决的问题：提供具有能够减少压电极化和自发极化的影响的结构的锁模半导体激光元件的驱动方法。解锁：锁模半导体激光元件具有层叠结构，其包括：第一 GaN化合物半导体的化合物半导体层30; 具有发光区域41和可饱和吸收区域42的第三化合物半导体层40; 和第二化合物半导体层50; 第二电极62和第一电极61.第二电极62通过分离槽62C分离成第一部分62A和第二部分62B。 当电流从第二电极的第一部分经由发光区域流过第一电极时，第二电极62进入正向偏压状态; 并且当跨越第一电极和第二电极的第二部分施加电压时，电场被施加到可饱和吸收区域。 因此，半导体激光元件在发光区域中进行单模式自脉动操作。

公开(公告)号：JP2010205810A

公开(公告)日：2010-09-16

申请号：JP2009047617

申请日：2009-03-02

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： YOKOYAMA HIROYUKI ,  KONO SHUNSUKE ,  OKI TOMOYUKI ,  IKEDA MASAO

IPC: H01S5/04

CPC classification number: H01S5/4006 ,  B82Y20/00 ,  H01S5/0428 ,  H01S5/06216 ,  H01S5/0658 ,  H01S5/14 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333

Abstract: PROBLEM TO BE SOLVED: To provide a method of driving an ultrashort pulse/ultrahigh power semiconductor laser element having a simple composition and structure.
SOLUTION: In the method of driving the semiconductor laser element, light is injected from a light injection means 10 into the semiconductor laser element 20 driven by a pulse current having a value 10 or more times as large as a value of a threshold current, or the light is injected from the light injection means 10 into the semiconductor laser element 20 driven by a pulse voltage having a value twice or more as large as a value of a threshold voltage.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种驱动具有简单组成和结构的超短脉冲/超高功率半导体激光元件的方法。 解决方案：在驱动半导体激光器元件的方法中，光从光注入装置10注入半导体激光器元件20，该脉冲电流的值为阈值的10倍或更多倍的脉冲电流驱动 或者光从光注入装置10注入半导体激光器元件20，该脉冲电压具有阈值电压值的两倍或更多倍的脉冲电压。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010027935A

公开(公告)日：2010-02-04

申请号：JP2008189265

申请日：2008-07-23

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OTA MAKOTO ,  YOKOYAMA HIROYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO

IPC: H01S5/065 ,  G11B7/125 ,  H01S5/223

CPC classification number: H01S5/0658 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0652 ,  H01S5/1064 ,  H01S5/22 ,  H01S5/32341

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser that can perform a self-pulsation operation, sufficiently decrease coherence of laser light, and stably obtain low-noise laser light. SOLUTION: The semiconductor laser has a laser chip 10 having at least one laser stripe 11, extending in a resonator length direction, between end surfaces 10a and 10b facing each other. The laser stripe 11 has a gain region 14 and a saturable absorption region 15 in the resonator length direction. The width of the laser stripe 11 in the saturable absorption region 15 is made larger than the width of the laser stripe 11 in the gain region 14. Electrodes 16 and 17 are provided separately from each other on the gain region 14 and saturable absorption region 15 respectively. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供能够进行自脉动操作的半导体激光器，充分降低激光的相干性，并稳定地获得低噪声激光。 解决方案：半导体激光器具有在彼此面对的端面10a和10b之间具有沿谐振器长度方向延伸的至少一个激光条纹11的激光器芯片10。 激光条纹11在谐振器长度方向上具有增益区域14和可饱和吸收区域15。 使可饱和吸收区域15中的激光条纹11的宽度大于增益区域14中的激光条纹11的宽度。电极16和17在增益区域14和可饱和吸收区域15上彼此分开设置 分别。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2006229248A

公开(公告)日：2006-08-31

申请号：JP2006128976

申请日：2006-05-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for easily manufacturing a semiconductor LED using nitride-based group III-V compound semiconductor with a long lifetime due to a low initial impairment rate, while its aged deterioration and luminescence nonuniformity are very low. SOLUTION: When a semiconductor LED, with a structure in which an InGaN active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, p-type AlGaN cap layer 9 and p-type AlGaN/GaN superlattice clad layer 18 are laminated, in this order, the active layer 7, undoped InGaN deterioration preventing layer 8, undoped GaN optical waveguide layer 17, and p-type AlGaN cap layer 9 must be grown at a growth temperature lower than that of the p-type AlGaN/GaN superlattice clad layer 18. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种使用氮化物系III-V族化合物半导体容易地制造半导体LED的制造方法，该半导体LED由于初始损伤率低而具有长寿命，而其老化劣化和发光不均匀性非常大 低。 解决方案：当具有InGaN活性层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17，p型AlGaN帽层9和p型AlGaN / GaN超晶格的结构的半导体LED 包覆层18依次层叠有源层7，未掺杂的InGaN劣化防止层8，未掺杂的GaN光波导层17和p型AlGaN覆盖层9必须在低于p的生长温度下生长 型AlGaN / GaN超晶格覆层18.版权所有（C）2006，JPO＆NCIPI