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公开(公告)号：CA1253945A
公开(公告)日：1989-05-09
申请号：CA486983
申请日：1985-07-17
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , OKADA TSUNEKAZU , CHIBA MICHIRO
Abstract: A semiconductor laser is disclosed, which is formed such that on a substrate there are in turn formed a first cladding layer, an active layer, a second cladding layer and a light absorbing layer for limiting a current path and for absorbing a light oscillated out from the active layer. In this case, the light absorbing layer is provided with a removed-away portion of stripe-shape for forming the current path, and in which the width W of the removed-away portion is selected in a range from 1 to 4 .mu.m, the thickness d1 of the active layer is selected so as to satisfy the condition of d1 ? 500 .ANG. and the distance d2 between the active layer and the light absorbing layer is selected in a range from 0.2 to 0.7 .mu.m, respectively.
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公开(公告)号：FR2534079B1
公开(公告)日：1987-11-13
申请号：FR8315257
申请日：1983-09-26
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：FR2534079A1
公开(公告)日：1984-04-06
申请号：FR8315257
申请日：1983-09-26
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：DE3335371A1
公开(公告)日：1984-04-05
申请号：DE3335371
申请日：1983-09-29
Applicant: SONY CORP
Inventor： ODA TATSUJI , MAMINE TAKAYOSHI , YONEYAMA OSAMU
Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.
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公开(公告)号：DE2838545A1
公开(公告)日：1980-03-20
申请号：DE2838545
申请日：1978-09-04
Applicant: SONY CORP
Inventor： MATSUSHITA TAKESHI , HAYASHI HISAO , MAMINE TAKAYOSHI , NISHIYAMA KAZUO
IPC: H01L21/22 , H01L29/167 , H01L21/265
Abstract: A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 1010 to 1015 cm-2 and heat-treating the semiconductor substrate with Fe ions at 850 DEG to 1250 DEG C. to control the lifetime of the minority carrier in the substrate and hence to reduce the temperature dependency of the lifetime.
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Patent Agency Ranking
公开(公告)号：CA1050646A
公开(公告)日：1979-03-13
申请号：CA237854
申请日：1975-10-17
Applicant: SONY CORP
Inventor： MATSUSHITA TAKESHI , MAMINE TAKAYOSHI
IPC: H01L31/04 , H01L31/06 , H01L31/068 , H01L31/0687 , H01L31/10
Abstract: MULTI-LAYER SEMICONDUCTOR PHOTOVOLTAIC DEVICE A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of the forward biasing of the PN junctions, transistor action occurs in each set of three successive layers, so that a carrier is injected from a first of these successive layers into the next adjacent layer and thence into the following successive layer so as to support a current therethrough. The photovoltaic device thus is adapted to supply a voltage and a current to a load.
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公开(公告)号：AU8535675A
公开(公告)日：1977-04-07
申请号：AU8535675
申请日：1975-10-01
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , MATSUSHITA TAKESHI
IPC: H01L31/04 , G02B1/11 , G02B1/113 , H01L21/314 , H01L31/02 , H01L31/0216 , H01L31/068 , H01L31/10 , H01L31/18
Abstract: A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.
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公开(公告)号：DE2546232A1
公开(公告)日：1976-04-29
申请号：DE2546232
申请日：1975-10-15
Applicant: SONY CORP
Inventor： MATSUSHITA TAKESHI , MAMINE TAKAYOSHI
IPC: H01L31/04 , H01L31/06 , H01L31/068 , H01L31/0687 , H01L31/10
Abstract: A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.
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公开(公告)号：DE2545136A1
公开(公告)日：1976-04-22
申请号：DE2545136
申请日：1975-10-08
Applicant: SONY CORP
Inventor： MAMINE TAKAYOSHI , MATSUSHITA TAKESHI
IPC: H01L31/04 , G02B1/11 , G02B1/113 , H01L21/314 , H01L31/02 , H01L31/0216 , H01L31/068 , H01L31/10 , H01L31/06
Abstract: A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.
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公开(公告)号：JP2006273760A
公开(公告)日：2006-10-12
申请号：JP2005096459
申请日：2005-03-29
Inventor： YAMAMOTO TAKUO , MAMINE TAKAYOSHI , TAKUMI TORU , AKASHI MAKOTO
IPC: C07K14/47 , A61K31/7088 , A61K31/7105 , A61K39/395 , A61K45/00 , A61K48/00 , A61P25/00 , A61P25/20 , A61P35/00 , C12M1/00 , C12N15/09 , C12Q1/02 , G01N33/15 , G01N33/50 , G01N33/53 , G01N33/566
CPC classification number: A61K31/7105 , A61K31/7088 , C07K14/4702 , C07K14/70567 , G01N33/743 , G01N2333/70567 , G01N2500/00
Abstract: PROBLEM TO BE SOLVED: To elucidate unexplained parts of controlling mechanism of circadian rhythm.
SOLUTION: Promotion of expression inducement of Bmal1(brain-muscle ARNT-like protein 1) by RORα (retinoic acid receptor-related orphan receptor alpha) and promotion of expression inducement of Bmal1 in low oxygen state are newly found out. Existence of control mechanism of circadian rhythm that promotion of expression of RORα by the low oxygen state or the like promotes expression inducement of Bmal1 and the promotion of expression inducement of Bmal1 promotes bonding of Bmal1 with CLOCK and promotes expression inducement of Per gene or Cry gene, is much suggested thereby. So, application thereof as a jet lag conditioner or an anticancer agent is possible.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：阐明昼夜节律控制机制的不明原因。 解决方案：新发现通过RORα（视黄酸受体相关孤儿受体α）促进Bmal1（脑 - 肌肉ARNT样蛋白1）的表达诱导和促进低氧状态下Bmal1的表达诱导。 存在昼夜节律的控制机制，促进低氧状态等的RORα表达促进Bmal1的表达诱导，促进Bmal1的表达诱导促进Bmal1与CLOCK的结合，促进Per基因或Cry基因的表达诱导 ，因此被大量的建议。 因此，作为喷射滞后调理剂或抗癌剂的应用是可能的。 版权所有（C）2007，JPO＆INPIT
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