公开(公告)号：JP2000216088A

公开(公告)日：2000-08-04

申请号：JP1249999

申请日：1999-01-20

Applicant: SONY CORP

Inventor： ASANO AKIHIKO ,  SUGANO YUKIYASU ,  FUJINO MASAHIRO ,  MANO MICHIO ,  INO MASUMITSU

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To form a semiconductor thin film of polycrystalline Si, etc., superior in the crystallinity on the entire substrate surface. SOLUTION: The forming method comprises a film forming step of forming a thin film 73 of an amorphous or polycrystalline semiconductor having a comparatively small grain size on a substrate 71, and a step of intermittently irradiating a laser beam having a specified energy area density distribution on the semiconductor thin film 73 with laser beam irradiating regions moving, relative to the substrate 71. The irradiation step is to irradiate the laser beam adjusted so that the energy area density at an end edge part of the irradiating region which has a possibility of overlapping with adjacent irradiating regions is lower than that at an inside part which has no possibility of overlapping with adjacent irradiating regions. It is controlled so that the energy density at an end edge part corresponding to a junction part in an excimer laser irradiating region is lower than that at an inside part other than the junction. It is possible to lessen the deterioration of the crystallinity due to the irradiating position variation at the junction between the laser irradiating regions due to the position deviation of the irradiating region.

公开(公告)号：JP2000208416A

公开(公告)日：2000-07-28

申请号：JP734199

申请日：1999-01-14

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  FUJINO MASAHIRO ,  ASANO AKIHIKO ,  MANO MICHIO ,  INO MASUMITSU

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To make it possible to form a semiconductor thin film made of good crystallized polysilicon all over an insulating substrate. SOLUTION: A step for forming a semiconductor thin film 4 made of amorphous or polycrystalline type material with relatively small grain size on a substrate 0 extended in longitudinal and sidewise directions, and a step for casting an energy beam like a laser beam 50 intermittently to the semiconductor thin film 4 while the substrate 0 is scanned with the energy beam, to change the amorphous or polycrystalline type material with relatively small grain size to the polycrystalline type with relatively large grain size are carried out. In the irradiation step, the irradiation region of the energy beam is reformed to an elongated shape in parallel with a sidewise direction (Y direction) and the energy beam is cast all over the semiconductor thin film without overlapping the irradiation regions in the sidewise direction, while the substrate 0 is scanned partly in an overlapped state in a lengthwise direction (X direction).

公开(公告)号：JP2000208415A

公开(公告)日：2000-07-28

申请号：JP238699

申请日：1999-01-08

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  FUJINO MASAHIRO ,  ASANO AKIHIKO ,  MANO MICHIO ,  INO MASUMITSU

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To make it possible to improve output performance and repeatability in a laser irradiation apparatus and improve a productive yield and repeatability in a crystallizing method for a semiconductor thin film. SOLUTION: A deposition step is carried out to form an amorphous semiconductor thin film 4 on a substrate 0. In an irradiation step, a laser beam 50 is cast intermittently and repeated to change the amorphous state to a crystal state while the laser beam 50 is scanned relatively to the substrate 10. In this case, a high-output laser irradiation apparatus has performance for irradiating the semiconductor thin film 4 repeatedly by using the laser beam 50 of total energy of 10 J or above with an area of 10 cm2 or above for each irradiation time. The laser beam 50 is cast with a repeating frequency of 10 Hz or above, so an yield (throughput) in the crystallizing method for the semiconductor thin film 4 can be improved. In addition, the laser beam 50 with an energy distribution of ±20% or below in a rectangular area not less than 10 cm2 and a variation in repeated irradiation energy under control of ±1% or below is used to crystallize the semiconductor thin film 4. As a result, a polycrystal semiconductor thin film 5 with a large grain size and uniform grain sizes can be obtained.

公开(公告)号：JPH07302838A

公开(公告)日：1995-11-14

申请号：JP9630294

申请日：1994-05-10

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To provide a connecting structure that has low resistance and with enough wiring reliability and a method of forming it. CONSTITUTION:In an ohmic contact connecting structure that is a connection by burying conductive material in a connecting hole 3, a region where good coverage conductive material 5 is buried as a CVD-TiN and a poly-Si selective CVD-W is formed to the depth of 1/3-1/4 at the lower part of the connecting hole and the region where low resistance conductive material 7 is buried as a blanket CVD-W is formed at an upper part of the connecting hole.

公开(公告)号：JPH0513366A

公开(公告)日：1993-01-22

申请号：JP19057791

申请日：1991-07-03

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: H01L21/28

Abstract: PURPOSE:To form an interconnection having a barrier metal with good ohmic property in a contact hole of a high aspect ratio. CONSTITUTION:Titanium 14 is deposited on an insulating film 12 and the inside of a contact hole 13. The titanium film 14 on the bottom of the contact hole is converted to titanium silicide 15. A titanium nitride film 16 is formed to cover the titanium silicide film 15 on the titanium film 14. A conductive film is deposited on the titanium nitride film 16 to fill the contact hole 13, and then an interconnection 18 is formed. Alternatively, after the titanium film 14 is formed on the insulating film 12, a barrier layer (not shown) is formed, and the titanium nitride film 16 is formed. The titanium film 14 in contact with the silicon substrate 11 is converted to silicide, while the barrier layer is rendered conductive. Then, the conductive film and interconnection 18 are formed.

公开(公告)号：JPH04264720A

公开(公告)日：1992-09-21

申请号：JP4542191

申请日：1991-02-19

Applicant: SONY CORP

Inventor： SUMI HIROBUMI ,  SUGANO YUKIYASU

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L29/43

Abstract: PURPOSE:To form a contact part of low resistance, and good barrier properties and step coating properties by burying an Al material uniformly in a connection hole having a barrier metal structure. CONSTITUTION:A TiSi2 layer 7a is formed on a surface of a source/drain region 5 of an MOS transistor, and an inner wall part of a contact hole 11 which is shaped facing the region is coated with a second Ti layer 12. The TiSi2 layer 7a is formed selfmatchingly by reacting the silicon substrate 11 with a first Ti layer (not illustrated) through a deliberately formed SiO2 layer (not illustrated) and shows low sheet resistance and good barrier properties. The second Ti layer 12 slows high wettability to an Al material and has a prevention effect of stress migration. The contact hole 11 can uniformly be buried without generating whiskers by an Al-1% Si layer 13.

公开(公告)号：JPH04254349A

公开(公告)日：1992-09-09

申请号：JP1513591

申请日：1991-02-06

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  SUGANO YUKIYASU

IPC: H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/677 ,  H01L21/68

Abstract: PURPOSE:To prevent cross-contamination between processes in a multichamber process apparatus. CONSTITUTION:An upper electrode 23 is provided at the upper part of a wafer transfer arm 18 provided within a wafer transfer chamber 20 and a high frequency is applied to this upper electrode 23 to generate plasma while introducing oxygen (O2) as a plasma source to such upper electrode 23. This plasma eliminates contamination due to reactive gas molecules, etc., adhered to the wafer transfer arm. Therefore, cross-contamination between processes can be prevented and reliability of process can be improved.

公开(公告)号：JPH04111317A

公开(公告)日：1992-04-13

申请号：JP22918190

申请日：1990-08-30

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  TAGUCHI MITSURU ,  KOYAMA KAZUHIDE

IPC: H01L23/52 ,  H01L21/3205

Abstract: PURPOSE:To sufficiently increase a strength and to improve resistance against a stress migration, etc., by forming an Al wiring layer at a high temperature to form a solid solution state of Al alloy, and then altering the solid solution state to a strength state by treating at a low temperature. CONSTITUTION:After an element such as a transistor, etc., is formed on an Si substrate, a contact hole is opened at an interlayer insulating film. Here, an AlCu alloy film is formed by a sputtering method while heating the substrate at 450 deg.C. Since the film is formed at the high temperature of 450 deg.C, its coverage is advantageous. After the film formation is finished in a sputtering device, it is cooled in a vacuum chamber, and removed in a solid solution state as it is. Then, a strength state forming step is conducted by annealing using a lamp heating in a short time, heating it at 450 deg.C for 30sec, then cooling it, and then heat treating it at 350 deg.C in a normal annealing furnace for 30 min. Thus, half or more of Cu can be altered to precipitate of alloy phase known as theta phase (Al2Cu). Since this precipitate exhibits an action of curing the Al material, an Al wiring strong against a stress migration can be formed.

公开(公告)号：JPH0480913A

公开(公告)日：1992-03-13

申请号：JP19526490

申请日：1990-07-24

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  SUMI HIROBUMI

IPC: H01L21/30 ,  H01L21/027

Abstract: PURPOSE:To make it possible to detect an alignment mark by a method wherein the beam passed through the wiring layer on an alignment is made to irradiate a semiconductor substrate, and the reflected beam or transmitted beam is detected. CONSTITUTION:When an alignment mark is detected, an X-ray irradiation part 1 is moved, the X-rays are scanned on a semiconductor substrate 2, and the X-rays are received smoothly by interlocking to the X-ray receiving part 3 with the X-ray irradiation part 1. An insulating film 4, consisting of SiO2 is formed on the surface part of the silicon semiconductor substrate 2, a contact hole 5, which constitutes an alignment mark, is formed on the insulating film 4, and a flattened aluminum wiring layer 6 is formed on the surface. The detection of the above-mentioned alignment mark is conducted utilizing the fact that the aluminum 6 is thickly formed on the part of the hole 5 constituting the alignment mark, it is thinly formed on the part where the hole 5 is not formed, and a contrast is formed in the transmitted X-rays by the difference of thicknesses.

公开(公告)号：JPH0480352A

公开(公告)日：1992-03-13

申请号：JP19114790

申请日：1990-07-19

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: C23C14/02 ,  C23C14/34 ,  C23C14/56 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To prevent the electrostatic breakage of a deposition preventive plate and to prevent the contamination with dust by previously forming an insulating film in a specified thickness on the plate arranged along the inner wall as the counter electrode to an electrode to be supplied with a high-frequency wave in a treating chamber. CONSTITUTION:An electrode 8 to be supplied with a high-frequency wave and a deposition preventive plate 10 arranged along the inner wall 9 (chamber wall) of the etching chamber to be used as the counter electrode to the electrode 8 are provided in the etching chamber 2 to constitute a sputtering system A, and an insulating film 21 is previously formed in a specified thickness on the plate 10. Consequently, the capacity of a capacitor formed by the plate 10, insulting film 21 and charge accumulating part (a) is lowered, and the amt. of the plasma charge to be accumulated is decreased. Accordingly, the electrostatic breakage (unnecessary discharge) due to the accumulation of the plasma charge in the plate 10 in sputtering is prevented, and the contamination with dust resulting from the unnecessary discharge is suppressed.