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    22.
    发明专利
    未知

    公开(公告)号：DE69615443D1

    公开(公告)日：2001-10-31

    申请号：DE69615443

    申请日：1996-05-06

    Applicant: ST MICROELECTRONICS SA

    Inventor： BERNIER ERIC

    IPC: H01L29/74 ,  H01L27/02 ,  H01L29/747 ,  H02H9/04 ,  H04Q3/42

    Abstract: The component is integrated on an n-type substrate whose rear face is coated with uniform metallisation (G) for earthing. Two portions (23,24) are separated by a p-type insulating wall. One portion (24) comprises two vertical diodes (e.g. D1) having a common earthed cathode, and two vertical transistors (e.g. T1) having a common earthed collector. The other portion (23) has two pairs of vertical thyristors (th1,th2) in inverse-parallel relationship whose conduction is controlled by pairs of vertical Zener diodes (z1,z2). Each p-well (P3,P4) in the first portion (only half of which is depicted) is surrounded by an n-type ring.

    23.
    发明专利
    未知

    公开(公告)号：DE69836069D1

    公开(公告)日：2006-11-16

    申请号：DE69836069

    申请日：1998-12-17

    Applicant: ST MICROELECTRONICS SA

    Inventor： RAULT PIERRE ,  BERNIER ERIC

    IPC: H01L29/74 ,  H03K17/725 ,  H01L27/06 ,  H01L27/08 ,  H01L29/747 ,  H03K17/00 ,  H03K17/0814

    Abstract: The present invention relates to a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal, a second anode-gate thyristor, the anode of which is connected to a second power terminal, and a resistor in series with a controllable switch, the midpoint of this series association being connected to the respective gates of the two thyristors. The present invention also provides a monolithic integration of the switch.

    24.
    发明专利
    未知

    公开(公告)号：DE69534509T2

    公开(公告)日：2006-07-13

    申请号：DE69534509

    申请日：1995-11-23

    Applicant: ST MICROELECTRONICS SA

    Inventor： BERNIER ERIC

    IPC: H01L29/74 ,  F23Q3/00 ,  H01L21/822 ,  H01L27/06 ,  H01L29/747 ,  H01L29/861

    Abstract: The device includes a region of the emitter of the parallel transistor (Tr) which sets of the circuit corresponds to the cathode region of the control thyristor (Th1) while the base of the transistor corresponds to the trigger region of the control thyristor. A region of conductivity corresp. to that of the substrate replaces a part of the anode region of the control thyristor opposite its cathode region. There are two vertical NPNP regions corresp. to the two thyristors with the two anodes corresp. to the same layer on a metallised rear surface which also contacts the replaced part. Metallisations are also formed on the principal thyristor cathode and between the control thyristor cathode and the principal thyristor trigger.

    27.
    发明专利
    未知

    公开(公告)号：DE69426319D1

    公开(公告)日：2000-12-28

    申请号：DE69426319

    申请日：1994-08-03

    Applicant: ST MICROELECTRONICS SA

    Inventor： BERNIER ERIC ,  BERTHIOT DENIS

    IPC: H01L29/74 ,  H01L29/744 ,  H05B41/04

    Abstract: The present invention relates to an amplifying gate thyristor comprising a main thyristor and an amplifying thyristor. The amplifying thyristor (GTO) is of the gate turn-on type. The main thyristor (T1) and the amplifying thyristor (GTO) are produced in such a way that the amplifying thyristor is conducting while the main thyristor is normally conducting. One application of the present invention resides in the switches associated with ballasts of fluorescent lamps fed by rectified alternating current.

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