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    Optical-type two-dimensional position sensor, in particular for automotive applications
    21.
    发明公开
    Optical-type two-dimensional position sensor, in particular for automotive applications 失效
    Optischer zweidimensionaler Positionsgeber，insbesonderefürAnwendungen in Kraftfahrzeugen

    公开(公告)号：EP0881470A1

    公开(公告)日：1998-12-02

    申请号：EP97830255.2

    申请日：1997-05-28

    Applicant: STMicroelectronics S.r.l.

    Inventor： Villa, Flavio Francesco ,  Vigna, Benedetto ,  Ferrari, Paolo

    IPC: G01D5/34

    CPC classification number: G01D5/34

    Abstract: The optical two-dimensional position sensor (1) comprises a selective optical unit (9) which faces, and is displaceable relative to an integrated device (2). The selective optical unit (9) is formed by a polarised light source (4,5) and a filter with four quadrants (3) which permits passage of the light onto two quadrants only. The selective optical unit (9) is attached to a control lever (6) such as to translate in a plane along a first direction (X) and a second direction (Y), and to pivot around a third direction (W) which is orthogonal to the preceding directions. In a transparent package, the integrated device (2) comprises a first group of sensor elements (10 1 -10 3 ) which are spaced along the first direction (X), a second group of sensor elements (10 4 -10 7 ) which are spaced along the second direction (Y) and a third group of sensor elements (10 8 -10 9 ) which detect the angular position of the selective optical sensor. Electronics which is integrated with the sensor elements generates a code which is associated with each position which is assumed by the selective optical unit (9) and a control signal (S) which corresponds to the function required.

    Abstract translation: 光学二维位置传感器（1）包括相对于集成器件（2）面向并可移位的选择性光学单元（9）。 选择性光学单元（9）由偏振光源（4,5）和具有四个象限（3）的滤光片形成，其允许仅将光通过两个象限。 选择性光学单元（9）附接到控制杆（6），以沿着第一方向（X）和第二方向（Y）在平面内平移，并且绕第三方向（W）枢转，第三方向 与前述方向正交。 在透明封装中，集成器件（2）包括沿着第一方向（X）间隔的第一组传感器元件（101-103），第二组传感器元件（104-107），沿着 第二方向（Y）和检测选择性光学传感器的角度位置的第三组传感器元件（108-109）。 与传感器元件集成的电子产生与由选择光学单元（9）假设的每个位置相关联的代码和对应于所需功能的控制信号（S）。

    A method of manufacturing pressure microsensors
    22.
    发明公开
    A method of manufacturing pressure microsensors 失效
    Methode zur Herstellung von mikromechanischen Drucksensoren

    公开(公告)号：EP0863392A1

    公开(公告)日：1998-09-09

    申请号：EP97830093.7

    申请日：1997-03-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Montanini, Pietro ,  Ferrera, Marco

    IPC: G01L9/00

    CPC classification number: G01L9/0054 ,  G01L9/0055

    Abstract: The method described provides for the formation of a region of silicon dioxide on a substrate (11) of monocrystalline silicon, the epitaxial growth of a silicon layer, the opening of holes (14') in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes (14') until a silicon diaphragm (12'), attached to the substrate (11) along the edges and separated therefrom by a space (15), is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes (14') to have diameters smaller than the thickness of the diaphragm (12') and to be closed by the formation of a silicon dioxide layer (16) by vapour-phase deposition at atmospheric pressure.

    Abstract translation: 所述方法提供了在单晶硅的衬底（11）上形成二氧化硅区域，硅层的外延生长，在二氧化硅区域上方的硅层中的孔（14'）的开口，以及 通过所述孔（14'）的化学侵蚀去除构成所述区域的二氧化硅，直到沿着所述边缘附着到所述基板（11）并通过空间（15）分离的硅隔膜（12'）， ，被生产。 为了形成绝对压力微传感器，必须密封空间。 为此，该方法提供孔（14'）具有小于隔膜（12'）的厚度的直径并且通过在大气中气相沉积形成二氧化硅层（16）来封闭 压力。

    An electromagnetic head with magnetoresistive means connected to a magnetic core
    27.
    发明公开
    An electromagnetic head with magnetoresistive means connected to a magnetic core 失效
    Ein elektromagnetischer Kopf mit magnetoresistive Mitteln verbunden mit einem Magnetkern

    公开(公告)号：EP0889460A1

    公开(公告)日：1999-01-07

    申请号：EP97830337.8

    申请日：1997-07-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

    IPC: G11B5/00 ,  G11B5/39

    CPC classification number: G11B5/3925 ,  G11B5/3183

    Abstract: An electromagnetic head (130) for a storage device comprises a magnetic core (205) forming a magnetic circuit, the magnetic core (205) being interrupted by a first air-gap (230) for magnetic coupling with a memory cell of the device, and by at least one second air-gap (235) which separates a first pole (240) and a second pole (245) of the magnetic core (205), and magnetoresistive means (250) disposed in the region of the second air-gap (235) for reading the memory cell; the magnetoresistive means (250) are connected to the magnetic core (205) in the region of the first pole (240) and of the second pole (245) so as to be connected in the magnetic circuit.

    Abstract translation: 用于存储装置的电磁头（130）包括形成磁路的磁芯（205），所述磁芯（205）由用于与所述装置的存储单元磁耦合的第一气隙（230）中断， 以及分离磁芯（205）的第一极（240）和第二极（245）的至少一个第二气隙（235）以及设置在第二空气 - 气体的区域中的磁阻装置（250） 间隙（235），用于读取存储单元; 磁阻装置（250）在第一极（240）和第二极（245）的区域中连接到磁芯（205），以便连接在磁路中。

    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
    28.
    发明公开
    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效
    具有集成的半导体器件的基于耐化学性气微传感器和它们的制备方法

    公开(公告)号：EP0882978A1

    公开(公告)日：1998-12-09

    申请号：EP97830272.7

    申请日：1997-06-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Mastromatteo, Ubaldo

    IPC: G01N27/12

    CPC classification number: G01N27/12

    Abstract: An integrated semi-conductor device (1) comprises, reciprocally superimposed, a thermally insulating region (3, 11); a thermal conduction region (25) of a high thermal conductivity material; a passivation oxide layer (30); and a gas sensitive element (34). The thermally insulating region (25) defines a preferential path towards the gas sensitive element (34) for the heat generated by the heater element (20), thereby the heat dispersed towards the substrate (2, 3) is negligible during the operation of the device (1).

    Abstract translation: 一个集成的半导体设备（1）包括，相互叠置，一个热绝缘区域（3，11）; 高导热性材料的导热区（25）; 钝化氧化物层（30）; 和气体敏感元件（34）。 热绝缘区域（25）定义朝向由加热器元件（20）所产生的热气体敏感元件（34）的优先路径，从而分散朝向基板的热量（2，3）是可忽略不计的在外科手术期间 装置（1）。

    Process for manufacturing a through insulated interconnection in a body of semiconductor material
    30.
    发明公开
    Process for manufacturing a through insulated interconnection in a body of semiconductor material 有权
    通过分离的化合物中的半导体材料的本体制造的方法

    公开(公告)号：EP2560199A1

    公开(公告)日：2013-02-20

    申请号：EP12190466.8

    申请日：2002-04-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Ferrari, Paolo

    IPC: H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

    Abstract: The process for manufacturing a through insulated interconnection is performed by forming, in a body (1) of semiconductor material, a trench (2) extending from the front (7) of the body (1) for a thickness portion thereof; filling the trench with dielectric material (6); thinning the body starting from the rear (5) until the trench (2), so as to form an insulated region (3) surrounded by dielectric material; and forming a conductive region (30b) extending inside said insulated region (3) between the front and the rear of the body and having a higher conductivity than the first body (1). The conductive region (8, 25, 28, 30b) includes a heavily doped semiconductor region (30b), made prior to filling of the trench.

    Abstract translation: 通过绝缘互连制造过程中进行，通过形成在一个主体（1）的半导体材料，沟槽（2）从前面（7）延伸的本体（1），用于其厚度部分; 用介电材料填充所述沟槽（6）; 减薄体从后部（5）开始直到沟槽（2），从而在绝缘区，以形成（3）由介电材料包围; 和形成导电区域（30B）延伸的前和所述主体的所述后部之间在所述绝缘区域（3）和具有比所述第一主体上的较高的导电性（1）。 导电区域（8，25，28，30B）包括一个重掺杂半导体区域（30B）填充沟槽之前进行。

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