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    Process for assembling a microactuator and a transducer in a hard disk R/W unit
    24.
    发明公开
    Process for assembling a microactuator and a transducer in a hard disk R/W unit 有权
    一种用于组装一组包括至少一个第一和一个第二元件，包括无包的显微组织的元素，其中一个过程

    公开(公告)号：EP1069552A1

    公开(公告)日：2001-01-17

    申请号：EP99830449.7

    申请日：1999-07-15

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Zerbini, Sarah ,  Sassolini, Simone ,  Vigna, Benedetto

    IPC: G11B5/55 ,  G11B21/08 ,  H01L21/20 ,  H01L21/304

    CPC classification number: G11B5/56 ,  B81C1/00896 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: The process for assembling a microactuator (10) on a R/W transducer (6) comprises the steps of: forming a first wafer (11) of semiconductor material comprising a plurality of microactuators (10) including suspended regions (15) and fixed regions (22) separated from each other by first trenches (24); forming a second wafer (25) of semiconductor material comprising blocking regions (27, 27') connecting mobile (29') and fixed (29") intermediate regions separated from each other by second trenches (33a); bonding the two wafers (11, 25) so as to form a composite wafer (39) wherein the suspended regions (15) of the first wafer (11) are connected to the mobile intermediate regions (29') of the second wafer (25), and the fixed regions (22) of the first wafer are connected to the fixed intermediate regions (29") of the second wafer; cutting the composite wafer (39) into a plurality of units (41); fixing the mobile intermediate region (29') of each unit (41) to a respective R/W transducer (6); and removing the blocking regions (27'). The blocking regions (27') are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

    Abstract translation: 用于在R / W换能器（6）组装的微致动（10）的方法包括以下步骤：形成半导体材料的第一晶片（11）包括微致动器包括悬浮的区域（15）和固定区域中的多个（10） （22）由第一沟槽（24）彼此分开; 形成包括阻挡区域（27,27“）连接的移动（29”的半导体材料）的第二晶片（25）和固定的（29“）通过第二沟槽（33A），键合两个晶片彼此分开的中间区域（11 ，25），以便形成worin第一晶片（11的悬置区（15）的复合材料晶片（39））被连接到所述第二晶片的移动中间区（29“）（25）和所述固定区 （22）所述第一晶片被连接到所述第二晶片的所述固定的中间区域（29“）的; 切割所述复合晶片（39）插入的单元有多个（41）; 每个固定单元（41）的移动中间区（29“）到respectivement R / W换能器（6）; 和去除所述阻挡区域（27“）。 阻挡区域（27“）由氧化硅制成的，以及中间区由多晶硅。

    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections
    26.
    发明公开
    Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections 有权
    由集成器件的制造方法，具有电浮置的中间体，微结构

    公开(公告)号：EP0996157A1

    公开(公告)日：2000-04-26

    申请号：EP98830629.6

    申请日：1998-10-21

    Applicant: STMicroelectronics S.r.l.

    Inventor： Vigna, Benedetto ,  Mastromatteo, Ubaldo

    IPC: H01L23/522 ,  H01L23/482 ,  H01L21/60

    CPC classification number: H01L23/4821 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The integrated device comprises an epitaxial layer (22) forming a first and a second region (23, 45) separated by at least one air gap (24). The first region (23) forms, for example, a suspended mass of an accelerometer. A bridge element (26) extends on the air gap (24) and has a suspended electrical connection line (28) electrically connecting the first and the second region (23, 45) and a protective structure (29) of etch-resistant material, which surrounds the electrical connection line (28) on all sides. The protective structure (29) is formed by a lower portion (31a) of silicon nitride and an upper portion (32a) of silicon carbide, the silicon carbide surrounding the electrical connection line (28) at the upper and lateral sides.

    Abstract translation: 该集成器件包括由至少一个空气间隙（24）隔开的外延层（22）形成第一和第二区域（23，45）。 所述第一区域（23）的形式，例如，加速度计的悬挂质量。 桥接元件（26）上的空气间隙（24）延伸，并且具有耐蚀刻材料的悬浮的电连接线（28）电连接所述第一和第二区域（23，45）和一个保护结构（29）， 包围在各方面的电连接线（28）。 所述保护结构（29）是由氮化硅的下部（31A），并在碳化硅，所述碳化硅在周围的上侧和横向侧的电连接线（28）的上部（32A）形成。

    An electromagnetic head with magnetoresistive means connected to a magnetic core
    27.
    发明公开
    An electromagnetic head with magnetoresistive means connected to a magnetic core 失效
    Ein elektromagnetischer Kopf mit magnetoresistive Mitteln verbunden mit einem Magnetkern

    公开(公告)号：EP0889460A1

    公开(公告)日：1999-01-07

    申请号：EP97830337.8

    申请日：1997-07-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

    IPC: G11B5/00 ,  G11B5/39

    CPC classification number: G11B5/3925 ,  G11B5/3183

    Abstract: An electromagnetic head (130) for a storage device comprises a magnetic core (205) forming a magnetic circuit, the magnetic core (205) being interrupted by a first air-gap (230) for magnetic coupling with a memory cell of the device, and by at least one second air-gap (235) which separates a first pole (240) and a second pole (245) of the magnetic core (205), and magnetoresistive means (250) disposed in the region of the second air-gap (235) for reading the memory cell; the magnetoresistive means (250) are connected to the magnetic core (205) in the region of the first pole (240) and of the second pole (245) so as to be connected in the magnetic circuit.

    Abstract translation: 用于存储装置的电磁头（130）包括形成磁路的磁芯（205），所述磁芯（205）由用于与所述装置的存储单元磁耦合的第一气隙（230）中断， 以及分离磁芯（205）的第一极（240）和第二极（245）的至少一个第二气隙（235）以及设置在第二空气 - 气体的区域中的磁阻装置（250） 间隙（235），用于读取存储单元; 磁阻装置（250）在第一极（240）和第二极（245）的区域中连接到磁芯（205），以便连接在磁路中。

    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof
    28.
    发明公开
    Integrated semi-conductor device comprising a chemoresistive gas microsensor and manufacturing process thereof 失效
    具有集成的半导体器件的基于耐化学性气微传感器和它们的制备方法

    公开(公告)号：EP0882978A1

    公开(公告)日：1998-12-09

    申请号：EP97830272.7

    申请日：1997-06-04

    Applicant: STMicroelectronics S.r.l.

    Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Mastromatteo, Ubaldo

    IPC: G01N27/12

    CPC classification number: G01N27/12

    Abstract: An integrated semi-conductor device (1) comprises, reciprocally superimposed, a thermally insulating region (3, 11); a thermal conduction region (25) of a high thermal conductivity material; a passivation oxide layer (30); and a gas sensitive element (34). The thermally insulating region (25) defines a preferential path towards the gas sensitive element (34) for the heat generated by the heater element (20), thereby the heat dispersed towards the substrate (2, 3) is negligible during the operation of the device (1).

    Abstract translation: 一个集成的半导体设备（1）包括，相互叠置，一个热绝缘区域（3，11）; 高导热性材料的导热区（25）; 钝化氧化物层（30）; 和气体敏感元件（34）。 热绝缘区域（25）定义朝向由加热器元件（20）所产生的热气体敏感元件（34）的优先路径，从而分散朝向基板的热量（2，3）是可忽略不计的在外科手术期间 装置（1）。

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    29.
    发明授权
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器，尤其是用于自由落体应用

    公开(公告)号：EP1879034B1

    公开(公告)日：2009-11-18

    申请号：EP06425485.7

    申请日：2006-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

    IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

    CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

    Microelectromechanical inertial sensor, in particular for free-fall detection applications
    30.
    发明公开
    Microelectromechanical inertial sensor, in particular for free-fall detection applications 有权
    微机电惯性传感器，尤其是用于自由落体应用

    公开(公告)号：EP1879034A9

    公开(公告)日：2008-05-14

    申请号：EP06425485.7

    申请日：2006-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Lasalandra, Ernesto ,  Vigna, Benedetto

    IPC: G01P15/08 ,  G01P15/125 ,  G11B19/04

    CPC classification number: G11B19/04 ,  G01P15/0891 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

    Abstract: Described herein is an inertial sensor (1) provided with a detection structure (9, 19) sensitive to a first, a second and a third component of acceleration (a x , a y , a z ) along respective directions of detection (x, y, z), and generating respective electrical quantities as a function of said components of acceleration. The detection structure (9, 19) supplies at output a resultant electrical quantity (C) obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration (a) acting on the inertial sensor (1), given by a vector sum of the components of acceleration (a x , a y , a z ) . In particular, the detection structure (9, 19) is of a microelectromechanical type, and comprises a mobile portion (2, 12) made of semiconductor material forming with a fixed portion (8, 18) a first, a second and a third detection capacitor, and an electrical-interconnection portion (10, 20), connecting the detection capacitors in parallel; the resultant electrical quantity (C) being the capacitance obtained from said connection in parallel.

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