Abstract:
Method for manufacturing a micro-electro-mechanical device (30; 30'), comprising the steps of: forming, on a substrate (2), a first protection layer (5) of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer (5), a sacrificial layer (8, 8') of silicon oxide removable with HF; forming, on the sacrificial layer (8, 8'), a second protection layer (15) of crystallized aluminum oxide; exposing a sacrificial portion (8') of the sacrificial layer (8, 8'); forming, on the sacrificial portion (8'), a first membrane layer (20) of a porous material, permeable to HF; forming a cavity (22) by removing the sacrificial portion (8') through the first membrane layer (20); and sealing pores of the first membrane layer (20) by forming a second membrane layer (24) on the first membrane layer (20).
Abstract:
The MEMS micromirror device (20) is formed in a package (24) including a containment body (22) and a lid (26) transparent to a light radiation. The package forms a cavity (23) housing a tiltable platform (21) having a reflecting surface (21A). A metastructure (30-32) is formed on the lid (26) and/or on the reflecting surface (21A) and comprises a plurality of diffractive optical elements (35).
Abstract:
A micro-electro-mechanical device (50), wherein a platform (52) is formed in a top substrate and is configured to turn through a rotation angle (θ). The platform has a slit (70) and faces a cavity (53). A plurality of integrated photodetectors (70) is formed in a bottom substrate so as to detect the light through the slit and generate signals correlated to the light through the slit. The area of the slit varies with the rotation angle of the platform and causes diffraction, more or less marked as a function of the angle. The difference between the signals of two photodetectors arranged at different positions with respect to the slit yields the angle.
Abstract:
A micro-electro-mechanical device (50), wherein a platform (52) is formed in a top substrate and is configured to turn through a rotation angle (θ). The platform has a slit (70) and faces a cavity (53). A plurality of integrated photodetectors (70) is formed in a bottom substrate so as to detect the light through the slit and generate signals correlated to the light through the slit. The area of the slit varies with the rotation angle of the platform and causes diffraction, more or less marked as a function of the angle. The difference between the signals of two photodetectors arranged at different positions with respect to the slit yields the angle.
Abstract:
A packaged pressure sensor, comprising: a MEMS pressure-sensor chip; and an encapsulating layer of elastomeric material, in particular PDMS, which extends over the MEMS pressure-sensor chip and forms a means for transferring a force, applied on a surface thereof, towards the MEMS pressure-sensor chip.
Abstract:
A MEMS device (20) is provided with: a supporting base (22), having a bottom surface (22b) in contact with an external environment; a sensor die (24), which is of semiconductor material and integrates a micromechanical detection structure (25); a sensor frame (30), which is arranged around the sensor die (24) and is mechanically coupled to a top surface (22a) of the supporting base (22); and a cap (36), which is arranged above the sensor die (24) and is mechanically coupled to a top surface (30a) of the sensor frame (30), a top surface (36a) of the cap (36) being in contact with an external environment. The sensor die (24) is mechanically decoupled from the sensor frame (30).
Abstract:
Method (50) for determining a first (P 1 ') and a second (P 2 ') calibrated value of atmospheric pressure, performed by an electronic apparatus (10) comprising a fixed device (14) and a first (12a) and a second (12b) movable device comprising respectively a first (16a) and a second (16b) movable barometer. The method (50) comprises: determining (S10) whether the movable devices are being inductively charged by the fixed device; if so, acquiring (S12) respective measured values of atmospheric pressure (P 1 , P 2 ) through the movable barometers (16a, 16b), and a reference value of atmospheric pressure (P rif ) in a common reference point of the electronic apparatus (10), the movable barometers being at respective predefined height differences (Δh) with respect to the common reference point; calculating (S14) respective pressure differences (ΔP 1 , ΔP 2 ) as a function of the measured values of atmospheric pressure and of the reference value of atmospheric pressure; and when the movable devices are not being charged, acquiring (S20) new measured values of atmospheric pressure through the movable barometers, and determining (S20) the respective calibrated values of atmospheric pressure as a function of the new measured values of atmospheric pressure and of the pressure differences.
Abstract:
A microelectromechanical mirror device (1; 100) has, in a die (1') of semiconductor material: a fixed structure (4) defining a cavity (3); a tiltable structure (2) carrying a reflecting region (2'), elastically suspended above the cavity; at least a first pair of driving arms (12a, 12b), coupled to the tiltable structure and carrying respective piezoelectric material regions (13) which may be biased to cause a rotation thereof around at least one rotation axis; elastic suspension elements (6a, 6b), which couple the tiltable structure elastically to the fixed structure, being stiff with respect to movements out of the horizontal plane and yielding with respect to torsion; and a piezoresistive sensor (20), configured to provide a detection signal (S r ) indicative of the rotation of the tiltable structure. At least one test structure (30, 30') is integrated in the die to provide a calibration signal (S c ) indicative of a sensitivity variation of the piezoresistive sensor (20), in order to calibrate the detection signal (S r ).
Abstract:
A method of processing a wafer (100) for manufacturing an oscillating structure (30), comprising the steps of: forming torsional elastic elements (56, 58); forming a mobile element (54, 60) connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure (112); and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.