公开(公告)号：WO2010070937A1

公开(公告)日：2010-06-24

申请号：PCT/JP2009/057712

申请日：2009-04-10

Applicant: CANON KABUSHIKI KAISHA ,  OCHI, Norihiko ,  IWATA, Kenichi

Inventor： OCHI, Norihiko ,  IWATA, Kenichi

IPC: H01J1/304 ,  H01J31/12

CPC classification number: H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

Abstract: An electron-emitting device has at least a cathode electrode, an electron-emitting member which is electrically connected to the cathode electrode, and a resistive layer which is provided between the cathode electrode and the electron-emitting member. The resistive layer is composed of the same material as that of the electron-emitting member, and film density of the resistive layer is lower than film density of the electron-emitting member.

Abstract translation: 电子发射器件至少具有阴极，与阴极电连接的电子发射元件，以及设置在阴极和电子发射元件之间的电阻层。 电阻层由与电子发射部件相同的材料构成，电阻层的膜密度低于电子发射部件的膜密度。

公开(公告)号：WO2007019529A2

公开(公告)日：2007-02-15

申请号：PCT/US2006030937

申请日：2006-08-04

Applicant: COPYTELE INC ,  DISANTO FRANK J ,  KRUSOS DENIS A

Inventor： DISANTO FRANK J ,  KRUSOS DENIS A

IPC: G09G3/22

CPC classification number: G09G3/22 ,  G09G2300/0842 ,  H01J29/04 ,  H01J29/96 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/319

Abstract: The present invention relates to a display device that employs edge emitters as a source for pixel electrons. The edge emitters allow the viewing glass plate to be made very small or eliminated, thereby substantially reducing the size of or eliminating the spacers typically utilized in conventional display devices and thereby enabling a simple and compact assembly structure. In one embodiment a pixel configuration comprises a phosphor area disposed between a plurality edge emitters, each of which are associated with tynes that are adapted to reduce the distance between the emitters and that separate the phosphor area into segments such that the emitters emit electrons when the voltage between a phosphor segment and the an emitter exceed a threshold voltage to cause the phosphor segment to emit light.

Abstract translation: 本发明涉及采用边缘发射器作为像素电子源的显示装置。 边缘发射器允许观察玻璃板制造得非常小或被消除，从而大大减小了常规显示装置中通常使用的间隔物的尺寸或消除间隔物，从而使得能够实现简单和紧凑的组装结构。 在一个实施例中，像素配置包括设置在多个边缘发射器之间的磷光体区域，每个发射器与适于减小发射器之间的距离的泰恩相关联，并且将磷光体区域分成段，使得当 荧光体区段和发射极之间的电压超过阈值电压，以使荧光体区段发光。

公开(公告)号：WO99031698A1

公开(公告)日：1999-06-24

申请号：PCT/US1998/026379

申请日：1998-12-11

IPC: H01J9/39 ,  H01J1/304 ,  H01J7/18 ,  H01J9/02 ,  H01J29/94 ,  H01J1/02 ,  H01J1/16 ,  H01J1/62 ,  H01J17/24 ,  H01J19/10 ,  H01J19/70 ,  H01J61/26 ,  H01J63/04

CPC classification number: H01J29/94 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.

Abstract translation: 自吸电子场发射器（30）具有由用于发射电子的低功函数材料形成的第一部分（40），并且其具有一体的第二部分（50），其作为低电阻电导体 并作为吸气表面。 自吸收发射体（30）通过将低功函数材料的薄膜平行于基板设置，并且将低电阻加固材料的薄膜平行于基板设置并与薄层 薄膜的低功能材料。 自吸收发射器（30）特别适用于横向场发射装置（10）。 优选的发射器结构具有锥形边缘（60），其中低功函数材料的突出部分（45）延伸超过吸气和低电阻材料的边缘（55）的一小段距离。 制造工艺（S1-S6）特别适用于在制造微电子场发射器件的同时自形成自吸电子场发射器。

公开(公告)号：WO9709730A3

公开(公告)日：1997-06-05

申请号：PCT/US9613329

申请日：1996-08-19

Applicant: FED CORP

Inventor： JONES GARY W ,  ZIMMERMAN STEVEN M ,  JONES SUSAN K SCHWARTZ ,  COSTA MICHAEL J ,  SILVERNAIL JEFFREY A

IPC: H01J1/304 ,  H01J

CPC classification number: H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A microelectronic field emitter device (50) comprising a substrate (78), a conductive pedestal (64) on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer (66) having an edge (68). The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50 wt.%), SiO2 + Cr (0 to 50 wt.%), SiO + Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate (240), an emitter conductor (242) on such substrate, and a current limiter stack (244) formed on said substrate, such stack having a top (246) and at least one edge (248, 250), a resistive strap (266) on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

公开(公告)号：WO1997009730A2

公开(公告)日：1997-03-13

申请号：PCT/US1996013329

申请日：1996-08-19

Applicant: FED CORPORATION

Inventor： FED CORPORATION ,  JONES, Gary, W. ,  ZIMMERMAN, Steven, M. ,  JONES, Susan, K., Schwartz ,  COSTA, Michael, J. ,  SILVERNAIL, Jeffrey, A.

IPC: H01J00/00

CPC classification number: H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A microelectronic field emitter device (50) comprising a substrate (78), a conductive pedestal (64) on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer (66) having an edge (68). The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50 wt.%), SiO2 + Cr (0 to 50 wt.%), SiO + Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate (240), an emitter conductor (242) on such substrate, and a current limiter stack (244) formed on said substrate, such stack having a top (246) and at least one edge (248, 250), a resistive strap (266) on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.

Abstract translation: 一种微电子场发射器件（50），包括衬底（78），所述衬底上的导电基座（64）和所述基座上的边缘发射极，其中所述边缘发射电极包括发射极帽层（66） （68）。 本发明还考虑了一种用于微电子场发射器件的电流限制器，其包括选自SiO，SiO + Cr（0至50重量％），SiO 2 + Cr（0至50重量％）的半绝缘材料。 ％），夹在电子注入器和空穴注入器之间的SiO + Nb，Al2O3和SixOyNz。 本发明的另一方面涉及一种微电子场发射器件，其包括衬底（240），在该衬底上的发射极导体（242）以及形成在所述衬底上的限流器叠层（244），所述叠层具有顶部（246） 以及至少一个边缘（248,250），在所述堆叠的顶部上的电阻带（266），所述边缘在与所述发射极导体电接触的所述边缘上延伸; 并且电流限制器堆叠上的电阻带上的发射极电极。

公开(公告)号：WO1995023424A1

公开(公告)日：1995-08-31

申请号：PCT/DE1995000221

申请日：1995-02-22

Applicant: KEESMANN, Till ,  GROSSE-WILDE, Hubert

IPC: H01J01/30

CPC classification number: H01J1/3042 ,  B82Y10/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/939

Abstract: The invention concerns a field-emission cathode made of an electrically conducting material and having the shape of a narrow rod or a knife edge to ensure a high magnification of the electric field strength. The field-emission cathode is characterized in that at least part of the electron-emitting zone of the cathode includes preferably cylindrical host molecules and/or compounds with other host molecules and/or cylindrical atom networks, optionally with end-caps with a diameter in the nanometer range.

Abstract translation: 导电材料和具有细杆形的几何形状或刀刃实现的电场强度高倍率的场发射阴极的装置的特征在于，所述场发射阴极的管状的电子发射部分至少部分地最好是管状笼分子和/或笼分子的化合物和/或 原子的网络，任选具有在纳米范围内直径尺寸端盖。

公开(公告)号：EP1055248A1

公开(公告)日：2000-11-29

申请号：EP99906784.6

申请日：1999-02-06

Applicant: Advanced Vision Technologies, Inc.

Inventor： POTTER, Michael, D.

IPC: H01J21/10 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423

Abstract: A lateral-emitter field emission device (10) has a gate (60) that is separated by an insulating layer (80) from a vaccum- or gas-filled microchamber environment (20) containing other elements of the device (10). For example, the gate (60) may be disposed external to the microchamber (20). The insulating layer (80) is disposed such that there is no vaccum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter (40, 100). The insulating layer (70, 80) disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber (20) containing their emitter (100). Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter (100) can reach only the anode (50, 55) in the same microchamber, even for diode devices lacking a gate electrode (60). A fabrication process (S1-S28) is specially adapted for fabricating the device and arrays of such devices.

公开(公告)号：EP1055245A1

公开(公告)日：2000-11-29

申请号：EP98963084.3

申请日：1998-12-11

Applicant: Advanced Vision Technologies, Inc.

Inventor： POTTER, Michael, D.

IPC: H01J1/02 ,  H01J1/16 ,  H01J19/10 ,  H01J1/62 ,  H01J63/04 ,  H01J17/24 ,  H01J19/70 ,  H01J61/26

CPC classification number: H01J29/94 ,  H01J2201/30423 ,  H01J2329/00

Abstract: A self-gettering electron field emitter (30) has a first portion (40) formed of a low-work-function material for emitting electrons, and it has an integral second portion (50) that acts both as a low-resistance electrical conductor and as a gettering surface. The self-geterring emitter (30) is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance geterring material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-geterring emitter (30) is particularly suitable for use in lateral field emission devices (10). The preferred emitter structure has a tapered edge (60), with a salient portion (45) of the low-work-function material extending a small distance beyond an edge (55) of the gettering and low resistance material. A fabrication process (S1-S6) is specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices.

公开(公告)号：EP1030338A2

公开(公告)日：2000-08-23

申请号：EP99403176.3

申请日：1999-12-16

Applicant: SONY CORPORATION ,  Hitachi Powdered Metals Co., Ltd.

Inventor： Iida, Koichi ,  Saito, Ichiro ,  Tachizono, Shinichi ,  Yamagishi, Takeshi

IPC: H01J1/30 ,  H01J3/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30423 ,  H01J2201/30457

Abstract: The field emission type cathode is made as a multilayered structure (33) in which conductive platelike corpuscles (30) are piled, whereby an edge portion of end surface of a field emission type cathode for emitting electrons is formed sharply and easily.

Abstract translation: 场致发射型阴极被制成多层结构（33），其中导电板状微粒（30）被堆叠，由此形成了用于发射电子的场致发射型阴极的端面的边缘部分，并且容易地形成。

公开(公告)号：EP0829094A1

公开(公告)日：1998-03-18

申请号：EP96916893.0

申请日：1996-05-31

Applicant: Advanced Vision Technologies, Inc. ,  Potter, Michael D.

Inventor： POTTER, Michael D.

IPC: H01J9 ,  H01J1 ,  H01J3 ,  H01J7

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A process for fabricating, in a planar substrate, a hermetically sealed chamber for a field-emission cell or the like, allows operating the device in a vacuum or a low pressure inert gas. The process includes methods of covering an opening (160), enclosing the vacuum or gas, and methods of including an optional quantity of gettering material. An example of a device using such a hermetically sealed chamber is a lateral-emitter field-emission device (10) having a lateral emitter (100) parallel to a substrate (20) and having a simplified anode structure (70). In one simple embodiment, a control electrode (140) is positioned in a plane above the emitter edge (110) and automatically aligned to that edge. The simplified devices are specially adapted for field emission display arrays. An overall fabrication process uses steps (S1-S18) to produce the devices and arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20), allow fabrication of devices having various functions and complexity, and allow covering a trench opening (160) etched through the emitter and insulator, thus enclosing the hermetically sealed chamber.

Abstract translation: 用于在平面衬底中制造用于场致发射单元等的密封室的工艺允许在真空或低压惰性气体中操作器件。 该方法包括覆盖开口（160），封闭真空或气体的方法，以及包括任选量的吸气材料的方法。 使用这种密封腔室的装置的例子是具有平行于衬底（20）并具有简化的阳极结构（70）的横向发射极（100）的横向发射场致发射装置（10）。 在一个简单的实施例中，控制电极（140）定位在发射器边缘（110）上方的平面中并且自动对准该边缘。 简化的器件特别适用于场发射显示阵列。 整个制造过程使用步骤（S1-S18）来制造器件和阵列。 制造工艺的各种实施例允许使用导电或绝缘衬底（20），允许制造具有各种功能和复杂性的器件，并且允许覆盖蚀刻穿过发射器和绝缘体的沟槽开口（160），从而封闭密封室 。