公开(公告)号：JP4861571B2

公开(公告)日：2012-01-25

申请号：JP2001217317

申请日：2001-07-17

Applicant: パナソニック株式会社

Inventor： 哲也 白鳥 ,  浩二 秋山 ,  英雄 黒川

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30469

公开(公告)号：JP4458380B2

公开(公告)日：2010-04-28

申请号：JP2009183719

申请日：2009-08-06

Applicant: キヤノン株式会社

Inventor： 健夫 塚本 ,  玉樹 小林 ,  拓人 森口 ,  彰志 西田

IPC: H01J1/304 ,  H01J1/316 ,  H01J31/12

CPC classification number: H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30492 ,  H01J2201/3165 ,  H01J2329/0426 ,  H01J2329/0471 ,  H01J2329/0489

公开(公告)号：JP3745844B2

公开(公告)日：2006-02-15

申请号：JP27078696

申请日：1996-10-14

Applicant: 浜松ホトニクス株式会社

Inventor： 正美 山田 ,  徹 廣畑 ,  実 新垣 ,  博文 菅

IPC: H01J7/02 ,  H01J31/12 ,  H01J1/304 ,  H01J29/04 ,  H01J29/94

CPC classification number: H01J29/94 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

公开(公告)号：US11688579B2

公开(公告)日：2023-06-27

申请号：US17549854

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhong-wei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04 ,  H01J37/26

CPC classification number: H01J37/073 ,  H01J1/14 ,  H01J1/304 ,  H01J9/025 ,  H01J9/042 ,  H01J37/065 ,  H01J37/26 ,  H01J2201/196 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30449 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06308 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

公开(公告)号：US20060267475A1

公开(公告)日：2006-11-30

申请号：US10554605

申请日：2004-04-26

Applicant: Hugo Visser ,  Marcus Verschuuren ,  Teunis Vink

Inventor： Hugo Visser ,  Marcus Verschuuren ,  Teunis Vink

IPC: H01J63/04 ,  H01J9/24

CPC classification number: H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30426 ,  H01J2329/00

Abstract: A field emission device (1) may be used for emitting electrons in, for example, a field emission display (FED). Field emission tips (40) are used for the emitting of electrons in the field emission device (1). In operation of the field emission device (1) a voltage is applied between a first electrode (4) having electrical contact with the field emission tip (40) and a second electrode (34) to make the field emission tip (40) emit electrons. To form a field emission tip (40) a layer of liquid material is applied on a substrate (2) provided with the first electrode (4). The layer of liquid material is embossed with a patterned stamp and subsequently cured to form a field emission tip structure (20). A conductive film (38) is applied on the field emission tip structure (20) to form a field emission tip (40) that has electrical contact with the first electrode (4).

Abstract translation: 场发射器件（1）可以用于例如场致发射显示器（FED）中的电子发射。 场发射尖端（40）用于场发射装置（1）中的电子发射。 在场致发射器件（1）的操作中，在与场发射尖端（40）电接触的第一电极（4）和第二电极（34）之间施加电压，以使场发射尖端（40）发射电子 。 为了形成场致发射尖端（40），在设置有第一电极（4）的衬底（2）上施加一层液体材料。 液体材料层被压印有图案化的印模并随后固化以形成场致发射尖端结构（20）。 导电膜（38）被施加到场发射尖端结构（20）上以形成与第一电极（4）电接触的场致发射尖端（40）。

公开(公告)号：US06822379B2

公开(公告)日：2004-11-23

申请号：US10262808

申请日：2002-10-01

Applicant: Paul H. McClelland ,  David L. Neiman ,  Steven Leith ,  Niranjan Thirukkovalur

Inventor： Paul H. McClelland ,  David L. Neiman ,  Steven Leith ,  Niranjan Thirukkovalur

IPC: H01J102

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G11B9/10 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

Abstract: An emission device includes a plurality of electron emitter structures of varied geometry that have a conducting layer deposited thereon. The conducting layer has openings located at tunneling sites for each of the electron emitter structures. The tunneling sites facilitate electron emissions from each of the varied geometry electron emitter structures upon voltage biasing of the conducting layer relative to the electron emitter structures.

Abstract translation: 发射装置包括具有沉积在其上的导电层的多种几何形状的电子发射体结构。 导电层具有位于每个电子发射器结构的隧道位置处的开口。 隧道位置有助于在导电层相对于电子发射体结构的电压偏置时来自各种不同的几何形状的电子发射体结构的电子发射。

公开(公告)号：US20040041508A1

公开(公告)日：2004-03-04

申请号：US10379968

申请日：2003-03-05

Inventor： Takashi Sugino ,  Masaki Kusuhara ,  Masaru Umeda

IPC: H01J001/02

CPC classification number: H01J1/304 ,  H01J2201/30426

Abstract: A high-efficiency electron-emitting device that can emit electron with higher luminance at a voltage lower than conventional electron-emitting devices, as a key device of a flat panel display, image pickup device, electron beam device, microwave traveling-wave tube is provided to improve the carrier injection efficiency and enhance luminance of an organic light-emitting device. A film having space charge with a thickness of 50 nm or less is formed on a surface of a conductive material on which irregularities, amorphous or fibrous materials are formed. The film includes compounds of group 3 atoms such as aluminum nitride, boron nitride, aluminum nitride boron, aluminum nitride gallium, boron nitride gallium and nitrogen atoms, and nitride, carbon, silicon, oxygen and boron such as oxides including nitrogen boron carbon, boron carbide, carbon nitride, boron.

Abstract translation: 作为平板显示器，图像拾取器件，电子束器件，微波行波管的关键器件，能够以比常规电子发射器件低的电压发射具有更高亮度的电子的高效电子发射器件是 用于提高载体注入效率并提高有机发光装置的亮度。 在形成有凹凸，无定形或纤维材料的导电材料的表面上形成具有50nm或更小厚度的空间电荷的膜。 该膜包括第3族原子的化合物，例如氮化铝，氮化硼，氮化铝硼，氮化铝镓，氮化硼镓和氮原子，以及氮化物，碳，硅，氧和硼，例如包括氮硼碳，硼 碳化物，碳氮化物，硼。

公开(公告)号：US20040032194A1

公开(公告)日：2004-02-19

申请号：US10637404

申请日：2003-08-08

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Keisuke Koga ,  Toru Kawase ,  Kenichi Honda ,  Tetsuya Norikane

IPC: H01J001/02 ,  H01J063/04

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.

Abstract translation: 场发射电子源元件包括阴极基板，形成在阴极基板上并具有开口的绝缘层，形成在绝缘层上的引线电极和形成在开口中的发射极。 发射体的电子发射区的表面层掺杂有选自氢和一氧化碳的至少一种还原元素。 此外，提供了包括上述场发射电子源元件的图像显示装置。 这使得不仅可以获得即使在长时间的高电流密度操作之后也不会引起电流下降的稳定的场致发射电子源元件，而且可以获得可以保持稳定的显示性能的高性能图像显示装置 在很长一段时间内。

公开(公告)号：US06692323B1

公开(公告)日：2004-02-17

申请号：US09483409

申请日：2000-01-14

Applicant: Behnam Moradi ,  Tian Zhang ,  John Lee

Inventor： Behnam Moradi ,  Tian Zhang ,  John Lee

IPC: H01J902

CPC classification number: H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2329/00

Abstract: A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

Abstract translation: 提供了一种结构和方法，通过用物质或化合物涂覆场致发射极尖端来抑制场发射器件的电子束的劣化。 物质或化合物在除气的作用下起作用以抑制这种降解。 在一个实施方案中，涂覆场发射器尖端的物质或化合物在除气的存在下是稳定的。 在另一个实施方案中，物质或化合物在除气中分解至少一种物质。 在另一个实施方案中，物质或化合物在除气中中和至少一种物质。 在另一个实施方案中，物质或化合物在除气的存在下引起催化。

公开(公告)号：US06201342B1

公开(公告)日：2001-03-13

申请号：US08885873

申请日：1997-06-30

Applicant: Karl D. Hobart ,  Francis J. Kub ,  Henry F. Gray ,  Mark E. Twigg ,  Phillip E. Thompson ,  Jonathan Shaw

Inventor： Karl D. Hobart ,  Francis J. Kub ,  Henry F. Gray ,  Mark E. Twigg ,  Phillip E. Thompson ,  Jonathan Shaw

IPC: H01J130

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the substrate in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

Abstract translation: 一种电子发射器件，其特征在于单晶衬底，多个单晶纳米片或支柱，以间隔开的关系设置在衬底上，并且通常由其延伸，单晶自组装尖端设置在纳米片的顶部，并且基本上原子上尖锐的顶点 场发射电子的技巧。 制造发射体的方法的特征在于在形成纳米片上的尖端之前形成栅电极和栅电极孔。