公开(公告)号：EP3333878A1

公开(公告)日：2018-06-13

申请号：EP17206077.4

申请日：2017-12-08

Applicant: SIA "KEPP EU"

Inventor： Ivanovs, Vadims ,  Kravtsov, Anatoly ,  Ladohin, Sergej

IPC: H01J37/305 ,  H01J37/077 ,  H01J37/147 ,  C22B9/22

CPC classification number: C22B9/228 ,  H01J37/077 ,  H01J37/147 ,  H01J37/305 ,  H01J2237/06366

Abstract: The invention relates to electronic equipment, more specifically - to development of gas-discharge electron guns for processing applications and can be used in special electrometallurgy for equipping high-capacity electron beam melting facilities, designed for melting and casting of metals and alloys for various purposes, especially for conducting the process with electromagnetic stirring (EMS) of the melt both for alloy smelting and forming of ingots or cast billets. The advantage of the proposed gun lies in a guaranteed exclusion of the possible intrusion of the atoms of metal of the gun's structural elements into the processing chamber thanks to the double turn of the electron beam in the beam guide. This will ensure obtaining high-purity metals and/or alloys.

公开(公告)号：EP2836242A1

公开(公告)日：2015-02-18

申请号：EP13775703.5

申请日：2013-03-15

Applicant: Electronworks Holdings LLC

Inventor： GORZEN, Daniel F. ,  KIRK, Randol E.

IPC: A61L2/03 ,  A61L2/14 ,  A61L2/02

CPC classification number: A61L2/087 ,  A61L2202/24 ,  H01J37/30 ,  H01J2237/06366 ,  H01J2237/182 ,  H01J2237/2002 ,  H01J2237/202 ,  H01J2237/31

Abstract: Low energy electron sterilizers and method of sterilization using low energy electrons are disclosed herein. An example method of sterilizing an instrument using low energy electrons can include generating one or more low energy electrons, maintaining the instrument in a vacuum and irradiating the instrument with the low energy electrons. The low energy electrons can have an energy less than or equal to 25 keV, and the vacuum can be sufficiently low to prevent the one or more electrons from producing a plasma.

Abstract translation: 本文公开了低能量电子消毒器和使用低能量电子的灭菌方法。 使用低能量电子对仪器进行灭菌的示例方法可包括生成一个或多个低能量电子，将仪器保持在真空中并用低能量电子照射仪器。 低能量电子可以具有小于或等于25keV的能量，并且真空可以足够低以防止一个或多个电子产生等离子体。

公开(公告)号：US20180337020A1

公开(公告)日：2018-11-22

申请号：US15778002

申请日：2016-12-23

Applicant: ENTEGRIS, Inc.

Inventor： Steven E. Bishop

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/02 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/06366

Abstract: A gas supply assembly is described for delivery of gas to a plasma flood gun. The gas supply assembly includes: a fluid supply package configured to deliver inert gas to a plasma flood gun for generating inert gas plasma including electrons for modulating surface charge of a substrate in ion implantation operation; and cleaning gas in the inert gas fluid supply package in mixture with the inert gas, or in a separate cleaning gas supply package configured to deliver cleaning gas to the plasma flood gun concurrently or sequentially with respect to delivery of inert gas to the plasma flood gun. A method of operating a plasma flood gun is also described, in which cleaning gas is introduced to the plasma flood gun, intermittently, continuously, or sequentially in relation to flow of inert gas to the plasma flood gun. The cleaning gas is effective to generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun.

公开(公告)号：US20170247789A1

公开(公告)日：2017-08-31

申请号：US15512315

申请日：2015-09-18

Applicant: PLASMA APP LTD.

Inventor： Dmitry YARMOLICH

IPC: C23C14/30 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/30 ,  C23C14/32 ,  H01J3/025 ,  H01J37/32055 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32596 ,  H01J37/32816 ,  H01J37/34 ,  H01J37/3467 ,  H01J2237/06366 ,  H01J2237/3137 ,  H01J2237/332

Abstract: A virtual cathode deposition apparatus utilises virtual plasma cathode for generation of high density electron beam to ablate a solid target. A high voltage electrical pulse ionizes gas to produce a plasma which temporarily appears in front of the target and serves as the virtual plasma cathode at the vicinity of target. This plasma then disappears allowing the ablated target material in a form of a plasma plume to propagate toward the substrate. Several virtual cathodes operating in parallel provide plumes that merge into a uniform plasma which when condensing on a nearby substrate leads to wide area deposition of a uniform thickness thin film.

公开(公告)号：US09460888B2

公开(公告)日：2016-10-04

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn Jung ,  Dong Hoon Song ,  Jin Sun Kim

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间的第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的每一个的波长。

公开(公告)号：US20090166555A1

公开(公告)日：2009-07-02

申请号：US12005757

申请日：2007-12-28

Applicant: Joseph C. Olson ,  Jay T. Scheuer

Inventor： Joseph C. Olson ,  Jay T. Scheuer

IPC: H01J27/00

CPC classification number: H01J27/18 ,  H01J27/026 ,  H01J37/08 ,  H01J37/30 ,  H01J37/31 ,  H01J2237/061 ,  H01J2237/06366 ,  H01J2237/0812 ,  H01J2237/31701

Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.

Abstract translation: 本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。 气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。 这种污染是由使用热离子源引起的，因为它们赋予污染物，并且由于它们升高的工作温度也容易产生短暂的生命周期。 虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。 在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。 通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

公开(公告)号：US20050184257A1

公开(公告)日：2005-08-25

申请号：US10784315

申请日：2004-02-20

Applicant: Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

Inventor： Khaled Elsheref ,  Alexandros Demos ,  Hichem M'saad

IPC: H01J37/304

CPC classification number: H01J37/077 ,  H01J37/304 ,  H01J2237/06366 ,  H01J2237/30433

Abstract: One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment parameters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

Abstract translation: 本发明的一个实施例是一种用于表征电子束处理装置的方法，其包括：（a）利用一组或多组电子束处理参数电子束处理预定类型的晶片或衬底中的一种或多种; （b）进行电子束处理测量从已经引起热和/或等离子体波的一个或多个晶片的表面反射的探针光束的强度; 和（c）从后期电子束处理测量中开发数据，其提供对电子束处理设备的性能的洞察。

公开(公告)号：JPWO2008068806A1

公开(公告)日：2010-03-11

申请号：JP2008548102

申请日：2006-11-30

Applicant: 株式会社光子発生技術研究所

Inventor： 廣成 山田 ,  廣成 山田 ,  大祐 長谷川 ,  大祐 長谷川 ,  典生 豊杉 ,  典生 豊杉

IPC: H01J37/06 ,  H01J3/02

CPC classification number: H01J37/06 ,  H01J37/077 ,  H01J2237/063 ,  H01J2237/06366

Abstract: 集束性の高い電子ビームを出力することができる小型で低額なRF電子銃は、筐体部(10)、ポールピース(13d)およびコイル(14d)から構成され、静磁場を生成する磁石と、静磁場が生成される領域に配置され、電子(e)を放出するエミッタ(15)と、静磁場が生成される領域に配置され、マイクロ波(RF)が入力されて高周波電場を生成する加速空洞(16)と、補正磁石(18d、19d)とを備え、磁石が、静磁場が一様な第1領域と、静磁場強度が単調に変化する第2領域(A1、A2)とを形成し、エミッタ(15)から放出される複数の電子を、高周波電場および第1領域の静磁場によって渦巻状(S)に移動させ、第2領域(A1)の静磁場及び補正磁石(18d、19d)によって集束させた後、出力する。

公开(公告)号：US20160260575A1

公开(公告)日：2016-09-08

申请号：US15059199

申请日：2016-03-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon Youn JUNG ,  Dong Hoon SONG ,  Jin Sun KIM

IPC: H01J37/06 ,  H01J37/244

CPC classification number: H01J37/06 ,  H01J3/024 ,  H01J2237/049 ,  H01J2237/061 ,  H01J2237/06325 ,  H01J2237/06366 ,  H01J2237/0656 ,  H01J2237/2482

Abstract: Provided may include an electron beam generator, an image apparatus including the same, and an optical apparatus. The optical apparatus includes a first and second laser apparatuses providing a first and second laser beams on a substrate, and a first optical system provided between the first and second laser apparatuses and the substrate to focus the first and second laser beams. The first and second laser beams overlap with each other generating an interference beam, thereby decreasing a spot size of the interference beam to be smaller than a wavelength of each of the first and second laser beams at a focal point.

Abstract translation: 可以提供电子束发生器，包括该电子束发生器的图像装置和光学装置。 光学装置包括在基板上提供第一和第二激光束的第一和第二激光装置，以及设置在第一和第二激光装置与基板之间以使第一和第二激光束聚焦的第一光学系统。 第一和第二激光束彼此重叠，产生干涉光束，从而将干涉光束的光点尺寸减小为小于焦点处的第一和第二激光束的波长的波长。

公开(公告)号：US08445870B2

公开(公告)日：2013-05-21

申请号：US13338456

申请日：2011-12-28

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellog ,  Anthony Graupera

IPC: H01J37/30 ,  H01J37/302

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中使用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。