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公开(公告)号：WO2006121173A1
公开(公告)日：2006-11-16
申请号：PCT/JP2006/309612
申请日：2006-05-08
Abstract: 真空装置に連通状態で接続された真空容器（４）の内部に、少なくともグリッド（２）と電子源（３）とイオンコレクタ（１）の３電極を備え、該電子源（３）から放射された電子をグリッド（２）の内外に振動させ、該振動電子によって該グリッド（２）内に飛来する気体分子をイオン化し、該イオン化したイオンをイオンコレクタ（１）で補足して電流信号に変換し、得られる電流強度から該真空装置内のガス分子密度（圧力）を測定する電離真空計において、前記イオンコレクタ（１）に、該イオンコレクタを加熱するための加熱装置を備える電離真空計である。
Abstract translation: 电离真空计包括与真空装置连通的真空容器（4），并具有格栅（2），电子源（3）和离子收集器（1）的至少三个电极。 从电子源（3）发射的电子在网格（2）的内部和外部振动，由此使振动电子离子进入格栅（2）的气体分子。 离子由离子收集器（1）收集并转换为电流信号，从而获得的电流强度测量真空装置中的气体分子密度（压力）。 离子收集器（1）配备有用于加热本身的加热装置。
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22.发明申请
公开(公告)号：WO2005091330A3
公开(公告)日：2005-11-10
申请号：PCT/US0211321
申请日：2002-05-28
Applicant: INFICON INC
Inventor： ELLEFSON ROBERT E , FREES LOUIS C
CPC classification number: H01J41/04
Abstract: In an ionization gauge, the effect of X-rays emitted when a collimated electron beam strikes grid surfaces in the gauge structure is reduced by a louvered beam stop. The louvered beam stop creates shadow regions having no X-rays, thus minimizing the amount of X-rays striking the collector plate and reducing the X-ray effect portion of the residual current.
Abstract translation: 在电离计中，当准直电子束撞击仪表结构中的栅格表面时发射的X射线的效果由百叶窗光束挡块减小。 百叶窗光束停止产生没有X射线的阴影区域，从而最小化撞击集电板的X射线的量并减少残余电流的X射线效应部分。
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公开(公告)号：KR1020070115933A
公开(公告)日：2007-12-06
申请号：KR1020077020242
申请日：2006-03-01
Applicant: 인피콘 게엠베하
IPC: G01L21/30
CPC classification number: G01L21/32 , G01L21/12 , H01J1/3042 , H01J41/04
Abstract: An electron-emitting cathode (6) consists of an electrically conducting emitter layer (7) attached to a side wall (2) which consists of stainless steel and a gate (9) which is fixed at a mall distance inside a concave emitter surface of the emitter layer (7). The cathode (6) surrounds a reaction area (3) containing a cylindrical grid-like anode (5) and a central ion collector (4) which consists of a straight axial filament. An ion collector current (lie) reflecting the densitiy of the gas in the reaction region (3) is measured by a current meter (11) while a gate voltage (VG) is kept between the ground voltage of the emitter layer (7) and a higher anode voltage (VA) and is regulated in such a way that an anode current (IA) is kept constant. The emitter layer (7) may consists of carbon nanotubes, diamond-like carbon, a metal or a mixture of metals or a semiconductor material, e.g., silicon which may be coated, e.g., with carbide or molybdenum. The emitter surface can, however, also be a portion of the inside surface of the side wall roughened by, e.g., chemical etching. The gate (9) may be a grid or it may be made up of patches of metal film covering spacers distributed over the emitter area or a metal film covering an electron permeable layer placed on the emitter surface.
Abstract translation: 电子发射阴极（6）由附着在由不锈钢构成的侧壁（2）上的导电发射极层（7）和门 发射极层（7）。 阴极（6）围绕包含圆柱形栅状阳极（5）的反应区域（3）和由直轴向丝线组成的中心离子收集器（4）。 通过电流计（11）测量反映在反应区域（3）中气体密度的离子集电极电流（11a），同时栅极电压（VG）保持在发射极层（7）的接地电压和 较高的阳极电压（VA）并且以使得阳极电流（IA）保持恒定的方式被调节。 发射极层（7）可以由碳纳米管，类金刚石，金属或金属或半导体材料的混合物组成，例如可以用碳化物或钼涂覆的硅。 然而，发射体表面也可以是通过例如化学蚀刻使侧壁的内表面的一部分变粗糙。 栅极（9）可以是栅格，或者它可以由分布在发射极区域上的覆盖隔离物的金属膜的贴片或覆盖放置在发射器表面上的电子渗透层的金属膜构成。
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公开(公告)号：EP2800960B1
公开(公告)日：2018-10-31
申请号：EP13746239.6
申请日：2013-02-07
Applicant: MKS Instruments, Inc.
Inventor： BRUCKER, Gerardo, A.
Abstract: An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.
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公开(公告)号：EP1890124A4
公开(公告)日：2012-08-22
申请号：EP06746359
申请日：2006-05-08
Applicant: AMPERE INC
Inventor： WATANABE FUMIO , WATANABE REIKI
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Patent Agency Ranking
公开(公告)号：EP1853890B1
公开(公告)日：2011-06-15
申请号：EP06707346.0
申请日：2006-03-01
Applicant: Inficon GmbH
Inventor： KNAPP, Wolfram , WÜEST, Martin
IPC: G01L21/30 , G01L21/32 , G01L21/34 , H01J1/30 , H01J1/304 , H01J41/00 , H01J41/02 , H01J41/04 , H01J41/06 , H01J41/08 , H01J41/10 , H01J19/00 , H01J19/02 , H01J19/04 , H01J19/10
CPC classification number: G01L21/32 , G01L21/12 , H01J1/3042 , H01J41/04
Abstract: An electron-emitting cathode (6) consists of an electrically conducting emitter layer (7) attached to a side wall (2) which consists of stainless steel and a gate (9) which is fixed at a mall distance inside a concave emitter surface of the emitter layer (7). The cathode (6) surrounds a reaction area (3) containing a cylindrical grid-like anode (5) and a central ion collector (4) which consists of a straight axial filament. An ion collector current (lie) reflecting the densitiy of the gas in the reaction region (3) is measured by a current meter (11) while a gate voltage (VG) is kept between the ground voltage of the emitter layer (7) and a higher anode voltage (VA) and is regulated in such a way that an anode current (IA) is kept constant. The emitter layer (7) may consists of carbon nanotubes, diamond-like carbon, a metal or a mixture of metals or a semiconductor material, e.g., silicon which may be coated, e.g., with carbide or molybdenum. The emitter surface can, however, also be a portion of the inside surface of the side wall roughened by, e.g., chemical etching. The gate (9) may be a grid or it may be made up of patches of metal film covering spacers distributed over the emitter area or a metal film covering an electron permeable layer placed on the emitter surface.
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公开(公告)号：EP1751538B1
公开(公告)日：2009-11-18
申请号：EP04741632.6
申请日：2004-05-22
Applicant: Agilent Technologies, Inc.
Inventor： GLATZ, Bernd , ANDERER, Herbert , BÄUERLE, Martin , KRAICZEK, Karsten , EICKHOFF, Jan , MÜLLER, Patrick
CPC classification number: G01N30/466 , B01L3/5025 , B01L3/502738 , B01L2400/0622 , G01N30/20 , G01N30/6095 , G01N30/724 , G01N2030/085 , G01N2030/201 , G01N2030/202 , H01J41/04 , H01J49/04
Abstract: A microfluidic chip (1; 87; 93; 149; 159; 201) with at least one inlet port, with at least one microfluidic flow path (249) coupled to the inlet port, and with at least one analytical element adapted for analyzing and/or separating components of a liquid within the flow path (249) which is arranged within or adjacent to, and/or is coupled to the microfluidic flow path (249). The microfluldic chip (1; 87; 93; 149; 159; 201) is adapted to execute at least two processes (45,47) in parallel.
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公开(公告)号：EP1751538A1
公开(公告)日：2007-02-14
申请号：EP04741632.6
申请日：2004-05-22
Applicant: Agilent Technologies, Inc.
Inventor： GLATZ, Bernd , ANDERER, Herbert , BÄUERLE, Martin , KRAICZEK, Karsten , EICKHOFF, Jan , MÜLLER, Patrick
CPC classification number: G01N30/466 , B01L3/5025 , B01L3/502738 , B01L2400/0622 , G01N30/20 , G01N30/6095 , G01N30/724 , G01N2030/085 , G01N2030/201 , G01N2030/202 , H01J41/04 , H01J49/04
Abstract: A microfluidic chip (1; 87; 93; 149; 159; 201) with at least one inlet port, with at least one microfluidic flow path (249) coupled to the inlet port, and with at least one analytical element adapted for analyzing and/or separating components of a liquid within the flow path (249) which is arranged within or adjacent to, and/or is coupled to the microfluidic flow path (249). The microfluldic chip (1; 87; 93; 149; 159; 201) is adapted to execute at least two processes (45,47) in parallel.
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公开(公告)号：EP0126987B1
公开(公告)日：1988-08-24
申请号：EP84104713.7
申请日：1984-04-26
Applicant: Granville-Phillips Company
Inventor： Bills, Daniel Granville , Dodgen, Stephen LeRele , Arnold, Paul Clarke , Van Cleve, Craig Brainard
IPC: H01J41/04
CPC classification number: H01J41/04
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公开(公告)号：EP2800960A1
公开(公告)日：2014-11-12
申请号：EP13746239.6
申请日：2013-02-07
Applicant: MKS Instruments, Inc.
Inventor： BRUCKER, Gerardo, A.
IPC: G01L21/32
Abstract: An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.
Abstract translation: 在高压下操作时控制由溅射产生的沉积物的位置的同时测量压力的电离计包括至少一个发射电子的电子源和限定电离体积的阳极。 电离计还包括集电极，其收集由电子和气体分子与电离体积中的原子之间的碰撞形成的离子，以提供气体压力输出。 电子源可以位于电离体积的一端，使得电子源对溅射离开集电极和包络面的原子通量的暴露最小化。 或者，电离计可以包括位于电离体积之外的第一阴影，第一阴影位于电子源和收集电极之间，并且可选地包括位于封套和电子源之间的第二阴影，使得原子溅射 封套被抑制沉积在电子源上。
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